Chemical features and nature of excited states in silicon oxides

Analysis of thermal emission activity of silicon oxides with respect to oxygen showed that electronically excited molecules of singlet oxygen make up the main fraction in the gas samples. The negative linear correlation between the specific activity and specific surface area of the samples points to volume localization of labile structural fragments. High-resolution vibrational and electronic spectroscopy revealed isolated Si-O oscillators, dimeric and trimeric oxygen associates, as well as Si-Si bonds in the ground and electronically excited states in the structure of isolated oscillators. Calculation and published data gave evidence for the possibility of dark initiation of redox transformations accompanied by formation of excited states.     

Structural Analysis of Armco Iron Subjected to Equal Channel Angular Extrusion

Electron diffraction microscopy of thin foils is used to study the defect substructure of armco iron subjected to equal channel angular extrusion at room temperature, using the processing route A. The morphology of the defect substructure is shown to be substantially affected by the section plane of the billets. The results obtained suggest that the evolution of the defect substructure of the material subjected to equal channel angular extrusion is clearly revealed only by examining no fewer than three mutually perpendicular section planes.__________Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 4, pp. 70–74, April, 2005.