Waveform stability of a traveling high-field domain in a Gunn diode

We assume that a constant voltage is applied across a sample of a Gunn diode of finite length. When a periodic boundary condition is assumed, the dynamical behavior of the electric field within the sample is described by a nonlinear integral-partial differential equation. By using this equation, we can study the waveform stability of a traveling high-field domain of solitary-wave type which plays an essential role in the Gunn effect. We obtain simple criteria which the sample length and the applied voltage must satisfy for the existence and stability of the high-field domain. The stability analysis is carried out by using Liapunov's second method.     

A structure analysis of Ag-adsorbed Si(111) surface by LEED/CMTA

The Ag induced superstructures on the Si(111) surface have been studied by low energy electron diffraction constant momentum transfer averaging (LEED/CMTA) technique. The vertical displacements of the atoms are determined from the analysis of the specularly reflected (00) beam intensities. Unexpected behavior of the Ag atoms is clarified: For the √3 × √3-Ag surface it is verified that the Ag atoms are embedded in the first double layer of Si, leading to a considerable rearrangement of the substrate. In contrast, for the 3 × 1-Ag surface, the Ag atoms are riding on the Si surface and the reconstruction of the substrate is small.     

LEED-AES study of the AuSi(100) system

The system Au/Si(100) has been studied using LEED and AES. Au films grow as Au(111) | Si(100) having six azimuthally rotated orientations at low deposition temperatures below 50°C after the formation of intermediate gold suicide layers. Crystalline gold silicide thin layers are formed on the Au(111) film after heat treatment at 100–400°C. Two types of suicide LEED pattern observed seem to have no correlation with crystallographic data reported on quenched alloy films. Heat treatment over 450°C leads to agglomeration of the film, producing a series of Au-induced superstructures. Heat treatment of the Au film over 1000°C regenerates the clean Si surface accompanied with many etch pits.     

Initial growth process and surface structure of Ag on Si(111) studied by low-energy Ion-Scattering Spectroscopy (ISS) and LEED-AES

The growth process of silver on a Si(111) substrate has been studied in detail by low-energy ion-scattering spectroscopy (ISS) combined with LEED-AES. Neon ions of 500 eV were used as probe ions of ISS. The ISS experiments have revealed that the growth at room temperature and at high temperature are quite different from each other even in the submonolayer coverage range. The following growth models have been proposed for the respective temperatures. At room temperature, the deposited Ag forms a two-dimensional (2D) island at around 2/3 monolayer (ML) coverage, where the Ag atoms are packed commensurately with the Si(111)1 substrate. One third of the substrate Si surface remains uncovered there. Then it starts to develop into Ag crystal, and at a few ML coverage a 3D island of bulk Ag crystal grows directly on the substrate. An intermediate layer, which covers uniformly the whole surface before the growth of Ag crystal, does not exist. At high temperatures (>~200°C), the well-known Si(111)√3-Ag layer is formed as an intermediate layer, which consists of 2/3 ML of Ag atoms and covers the whole surface uniformly. These Ag atoms are embedded in the first double layer of the Si substrate. It is concluded that the formation of the √3 structure needs relatively high activation energy which may originate from the large displacement of Si atoms owing to the embedment of the Ag atoms, and does not proceed below about 200°C. The most stable state of the Ag atoms on the outermost Si layer is in the shape of an island, both for the Si(111) surface and for the Si(111)√3-Ag surface.     

Conductive polymer-carbon-imidazolium composite: a simple means for constructing solid-state dye-sensitized solar cells

A clay-like conductive material comprising polyaniline-loaded carbon black particles and an ethyleneoxide-substituted imidazolium iodide was prepared. The material was sandwiched between dye-coated porous TiO2 and counter-electrode to form a solid-state dye-sensitized solar cell, which works with overall conversion efficiencies of 3.48% and 4.07% for AM 1.5, 100 mW cm(-2) and 23 mW cm(-2) irradiation, respectively.     

New procedure to mask the 2,3-pi bond of the indole nucleus and its application to the preparation of potent opioid receptor agonists with a Corynanthe skeleton

Treatment of indole alkaloids with hypervalent iodine in the presence of ethylene glycol provides 2,3-ethylene glycol bridged adducts that could be converted into the original indoles under mild reductive conditions. This procedure, which involves masking of the reactivity of the indole nucleus at the beta-position, was utilized for the modification of the benzene ring of the indoline derivative and was applied to the preparation of potent opioid receptor agonists with the Corynanthe skeleton. [reaction: see text]     

Design of Photostable,Activatable Near‐Infrared Photoacoustic Probes Using Tautomeric Benziphthalocyanine as a Platform

Near‐infrared (NIR) imaging techniques have attracted significant attention for biological and medicinal applications due to the ability of NIR to penetrate deeply into tissues. However, there are very few stable, activatable molecular probes that can utilize NIR light in the wavelength range beyond 800 nm. Herein, we report a new activatable NIR system for photoacoustic imaging based on tautomeric benziphthalocyanines (BPcs). We found that the existence of a free hydroxyl group is crucial for NIR absorption of BPcs. Synthesized water‐soluble hydroxy BPcs exhibited high photostability and no fluorescence, which are desirable features for photoacoustic imaging. We synthesized BPcs in which the free hydroxyl group was masked by an esterase‐labile or an H₂O₂‐labile group. The photoacoustic signals of these hydroxy‐masked BPcs were increased upon NIR excitation at 880 nm in the presence of esterase or H₂O₂, respectively. These are rare examples of activatable probes utilizing NIR light at around 900 nm.     

Surface-sensitive NMR in optically pumped semiconductors

We present a scheme of surface-sensitive nuclear magnetic resonance in optically pumped semiconductors, where an NMR signal from a part of the surface of a bulk compound semiconductor is detected apart from the bulk signal. It utilizes optically oriented nuclei with a long spin-lattice relaxation time as a polarization reservoir for the second (target) nuclei to be detected. It provides a basis for the nuclear spin polarizer [IEEE Trans. Appl. Supercond. 14:1635, 2004], which is a polarization reservoir at the surface of the optically pumped semiconductor that polarizes nuclear spins in a target material in contact through the nanostructured interfaces.