Sidewall-insert compound based on ZnO-treated aramid pulp fibers for run-flat tires

Abstract

To improve the endurance performance of run-flat tires by preventing the sidewall from folding at zero air pressure, a master batch of natural rubber and ZnO-treated aramid pulp (AP) is applied to the rubber sidewall-insert-layer compound. The mechanical, viscoelastic, and fatigue properties of the compounds are investigated by varying the AP content, and the endurance performance of actual run-flat tires is assessed. The results indicate that the mechanical properties are improved and the hysteresis is reduced as the AP content increased. The overall trend of the endurance times of the run-flat tires is consistent with the results of the DeMattia tests, constant-strain fatigue tests, and high-temperature tensile tests. The run-flat endurance time of the tire containing one part per hundred rubber (phr) of AP is superior to that of the tire containing 3 phr of AP because of the enhanced dispersion of the AP fibers.     

利用混沌信号幅值实现混沌同步

构造了一个三维混沌系统, 简要分析了该混沌系统的平衡点性质、混沌吸引子相图和Lyapunov指数等特性. 在此基础上, 利用反馈同步思想设计了一种利用混沌信号部分信息实现混沌同步的方法, 完成了三维混沌系统的同步. 该方法仅利用混沌信号幅值信息即可实现两个混沌系统的同步, 其同步建立与混沌信号的极性无关, 此特性可有效提高混沌通信质量. 通过分析系统的条件Lyapunov指数证实该方法的有效性, 数值仿真表明该方法与利用混沌信号全部信息的线性反馈同步法相比, 同步建立时间基本相同.     

The influence of thermally assisted tunneling on the performance of charge trapping memory

We evaluate the influence of the thermally assisted tunneling (TAT) mechanism on charge trapping memory (CTM) cell performance by numerical simulation, and comprehensively analyse the effects of the temperature, trap depth, distribution of trapped charge, gate voltage and parameters of TAT on erasing/programming speed and retention performance. TAT is an indispensable mechanism in CTM that can increase the detrapping probability of trapped charge. Our results reveal that the TAT effect causes the sensitivity of cell performance to temperature and it could affect the operational speed, especially for the erasing operation. The results show that the retention performance degrades compared with when the TAT mechanism is ignored.     

Structural and electronic properties of type-I and type-VIII Ba8Ga16Sn30 clathrates under compression

The total energy and electronic structures for type-I (β phase) and type-VIII (α phase) Ba₈Ga₁₆Sn₃₀ clathrates under hydrostatic pressure have been investigated using density functional theory (DFT) calculations. It was found that the type-VIII phase is more stable than the type-I one at ambient conditions and that β→α phase transition can not occur under hydrostatic pressure. The band structures show that the type-I and type-VIII Ba₈Ga₁₆Sn₃₀ are indirect semiconductors with band gaps of 0.24 eV and 0.19 eV, respectively. The results suggested that type-I clathrate Ba₈Ga₁₆Sn₃₀ has a larger value of the thermoelectric (TE) power than that of type-VIII clathrate. We found that pressure tuning changes the k-point of conduction band minimum (CBM) in the Brillouin zone for β-phase, but it is not the case for α-phase. Furthermore, the results show that the pressure can change the interaction between guest atoms and the host lattice, and consequently results in the decrease of the band gap of β-phase and the increase of the band gap of α-phase, indicating that the pressure effect can play an important role in the magnitude of the TE power.     

MPCVD金刚石膜装置中 Ar的光谱特性分析

在MPCVD装置中,通过调节微波功率、气体流量及反应压强,使用高分辨率的多道光学分析仪采集得到Ar的400～440 nm光谱,利用玻耳兹曼"斜率法"得到Ar激发温度Texc. 结果显示:随气体流量增加Texc降低;随着微波功率的增加Texc升高;谱线强度随着功率的增加而上升,在550 W及700 W处开始降低继而又上升,此点是制备金刚石膜的功率关键点.     

The SN3–SN2 spectrum. Rate constants and product selectivities for solvolyses of benzenesulfonyl chlorides in aqueous alcohols

Rate constants for a wide range of binary aqueous mixtures and product selectivities (S) in ethanol–water (EW) and methanol–water (MW) mixtures, are reported at 25 °C for solvolyses of benzenesulfonyl chloride and the 4‐chloro‐derivative. S is defined as follows using molar concentrations: S = ([ester product]/[acid product]) × ([water solvent]/[alcohol solvent]). Additional selectivity data are reported for solvolyses of 4‐Z‐substituted sulfonyl chlorides (Z = OMe, Me, H, Cl and NO₂) in 2,2,2‐trifluoroethanol–water. To explain these results and previously published data on kinetic solvent isotope effects (KSIEs) and on other solvolyses of 4‐nitro and 4‐methoxybenzenesulfonyl chloride, a mechanistic spectrum involving a change from third order to second order is proposed. The molecularity of these reactions is discussed, along with new term ‘S_N3–S_N2 spectrum’ and its connection with the better established term ‘S_N2–S_N1 spectrum’. Copyright © 2009 John Wiley & Sons, Ltd.     

顶端ZnO纳米结构对GaN基LED光提取效率的影响

为了提高GaN基蓝光LED的光提取效率,本文建立了LED顶面分别铺设ZnO纳米柱和纳米锥结构的两种模型,利用时域有限差分法对两种模型进行仿真并对结果进行了比较.仿真结果表明,ZnO纳米结构的各项几何结构参量(包括排列周期P、高度L、宽度W以及斜率k等),对LED顶端光提取效率影响显著.仿真分别得到了两种结构的最佳模型,通过比较,LED顶面纳米柱和纳米锥结构对光提取效率的提高效果相近,其最佳提取效率分别增强至无任何结构时的2.5倍和2.3倍.同时,通过对各项参量扫描获得的对光提取效率的变化曲线进行了分析,并给出了相应相应的理论解释.这些模型优化和理论分析对实际的高性能GaN基LED的设计制造有着指导意义.     

Photovoltaic effect of TiO2 thick films with an ultrathin BiFeO3 as buffer layer

The photovoltaic (PV) effect of a bilayer anatase TiO₂/BiFeO₃ (BFO) film has been studied. The 20-nm ultrathin BFO layers were deposited on the fluorine-doped tin oxide (FTO) glass substrates by the chemical solution deposition method. An anatase TiO₂ layer is deposited subsequently on the BFO surface via a screen-printing technique. It is found that the FTO/TiO₂/Au cell exhibits negligible PV effect under solar exposure, while the one after introducing an ultrathin BFO film between TiO₂ and FTO leads to a considerable PV effect with an open-circuit voltage of ?0.58 V and a photocurrent density of 18.27 µA/cm². The FTO/BiVO₄ (BVO)/TiO₂/Au cell was constructed to investigate the underlying mechanism for the observed effect. A negligible PV effect of the FTO/BVO/TiO₂/Au cell indicates that the PV effect of the FTO/BFO/TiO₂/Au cell arises mainly from a built-in electric field in the BFO film induced by the self-polarization. Our work opens up a new path to utilize TiO₂ and may influence the future design of solar cells.     

Analysis and Simulation of Quantum Radar Cross Section

We derive a modified analytical expression of a quantum radar cross section （QRCS）. Subsequently, we present a comparison between the QRCS and a classical radar cross section （RCS） and analyze the factors that can affect the intensity of the peak and side lobes. Simulation results on a flat rectangular plate demonstrate that QRCS has a similar structure to that of RCS. The analysis of side-lobe structure can benefit the design of quantum stealth platforms as well as the research on quantum radars.