Four-wave mixing reflectivity of silicon at 1.06 μm: Influence of free-carrier absorption

The phase-conjugate reflectivity obtainable by degenerate four-wave mixing in silicon at a 1.06 m is calculated including free-carrier absorption. A maximum reflectivity of more than 100% is possible. The dependence of the reflectivity on the signal and pump energy densities up to 70 mJ/cm² is measured and found to agree with theory. The wave-front-correction property of DFWM is demonstrated with a lens in the signal beam.     

Dynamic absorption effects in KrF* amplifiers

The results of transient loss measurements performed in a self-sustained discharge KrF^* amplifier are reported. Analysis of these results gives a minimum value of 20 for the effective gain to loss ratiog ₀/_eff, indicating that efficient extraction of energy in subpicosecond KrF^* amplifiers in the 1 J range should be achievable.     

Surface photovoltage measurement in MOS structures

A method for the dc surface photovoltage measurement in MOS capacitors is proposed. Results of surface-photovoltage measurements performed for two kinds of MOS structures on p-type silicon substrates are presented. Comparison of them with results obtained form C-V characteristics exhibits a satisfactory conformity. Two groups of surface states beginning at E _t ¹ = E_v + 0.25 eV and E _t ² = E_c – 0.30 eV in the oxide-silicon interface of the investigated structures had been found.     

Selecting the duration of excitation pulses for an electroluminescent thin-film matrix

The factors influencing the optimum selection of the excitation pulse width of thin-film electroluminescent devices is examined. It is shown that to excite an individual cell, a pulse width of 5–7 sec is sufficient, but to excite the matrix, the pulse width is determined by the independence of the conducting layer and the dimensions of the matrix. Formulas are cited for engineering calculations of the required pulse width.Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 12, pp. 59–62, December, 1987.     

Effective mass of heavy holes in diamond-like semiconductors

Nonparabolicity of the heavy hole band in diamond-like semiconductors, which occurs within the framework of the three band model with the perturbation from the other bands taken into account to the Löwdin prucedure, is studied. A direct dependence of nonparabolicity on the band anisotropy (caused by the different effect of _15c and _12c bands) and the inverse dependence on the magnitude of the spin-orbit splitting is established. A connection between the effective mass of heavy holes and their energy is obtained, which is valid for the majority of diamond-like semicondactors, except for materials with very strong nonparabolicity of the band of silicon type.Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 2, pp. 66–70, February, 1987.     

Direct generation of photons in\tilde v_e e-annihilation into hadrons

In the quark-parton model we obtain an expression for the effective cross section of the process of direct photon generation in the annihilation of an antineutrino and an electron into hadrons (_e + e + X). The angular and energy dependences of the photons are investigated. It is shown that for large photon energies, the contribution from hadronic radiation dominates that from leptonic radiation.Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 11, pp. 98–103, November, 1987.     

Electron emission from Al,Pt, Ag,and Au surfaces under the action of resonant photons with λ=2537 and 1850 Å

An original variant of an electronic device is described, which can be used for gamma-process selection under ionized gas conditions. The device is based on a Hanley and Schaffernicht electron gun. Selection of photons and metastable atoms is performed by a quartz tube located in axial symmetry with the primary electron gun. The desired signal is measured from the flow of secondary electrons emitted from Al, Pt, Ag, and Au surfaces under the action of resonant photons radiated from the levels Hg(6³P₁) and Hg(6¹P₁). For =2537 Å the following values were obtained for _ph 9.1, 3.8, 1.1, 0.25. Analogous values of _ph for =1850 Å were equal to 45.5, 10.8, 6.5, 3.2. The _ph values are in units of 10^–4.Translated from Vysshikh Uchebnykh Zavedenii, Fizika, No. 12, pp. 68–74, December, 1987.     

Self-activated luminescence of zinc sulfide

The nature of the luminescence of zinc sulfide in the spectral range (360), 380–420 nm (SAL) at 80K is analyzed. It is shown that the appearance of SAL radiation is accompanied by additional absorption in the region (350) 365–370 nm at 80K. The low-temperature spectra of sphalerite, exposed to different radiation and subjected to different treatment, are studied. The multiband luminescence of the isoelectronic sulfur impurity in ZnO deposits in the region 383–640 nm is discussed. It is concluded that SAL luminescence is attributable to the localization of excitons in ZnS on clusters, whose formation precedes the precipitation of the ZnO·S phase. The formation of oxygen clusters and deposits on dislocations in ZnS is studied.Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 2, pp. 60–66, February, 1987.     

Effect of copper impurity on the edge emission of ZnTe crystals

The results are given of studies on the edge emission of undoped and copperdoped ZnTe crystals in the temprature range 4.2–300K. The copper impurity has been found to increase the intensity of the principal edge emission band substantially. Analysis of the structure of this emission band indicated that a temprature below 160K the main role is played by the emission from excitons that are most probably bound in Cu_Zn and Li_Zn centers while at higher temperatures it is played by emission during the transition of free electrons to these centers. An appreciable role is played over the entire range of temperatures by emission from free electrons with an energy of 13 MeV. The luminescence quenching energy below 160 K has a value of 7 MeV (the binding energy of a bound exciton) and at higher temperatures it is 78 MeV.Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 8, pp. 68–73, August, 1987.     

Stop times in fock space stochastic calculus

Summary A stop time S in the boson Fock space over L ₂()₊ is a spectral measure in [0,] such that {S([0,t])} is an adapted process. Following the ideas of Hudson [6], to each stop time S a canonical shift operator U ^Sis constructed in . When S({}) has the vacuum as a null vector U ^Sbecomes an isometry. When S({})=0 it is shown that admits a factorisation _S]{S where _{S is the range of U ^Sand _S] is a suitable subspace of called the Fock space upto time S. This, in particular, implies the strong Markov property of quantum Brownian motion in the boson as well as fermion sense and the Dynkin-Hunt property that the classical Brownian motion begins afresh at each stop time. The stopped Weyl and fermion processes are defined and their properties studied. A composition operation is introduced in the space of stop time to make it a semigroup. Stop time integrals are introduced and their properties constitute the basic tools for the subject.