Characterization of surface deformation around Vickers indentations in InGaAsP epilayers on InP substrate

The deformation surrounding Vickers indentations on InGaAsP/InP epilayers have been studied in detail. The surface topography was characterized by using atomic force microscopy (AFM). The material pile-up and sink-in regions around the indentation impression was observed for the quaternary InGaAsP/InP epilayers. The sectional analysis mode of the AFM shows the depth profile at the indented region. Microindentation studies were carried out for different atomic fraction of the quaternary InGaAsP/InP compound semiconductor alloys. The microhardness values of InGaAsP/InP epilayers were found to be in the range of 5.08 and 5.73 GPa. These results show that the hardness value of the quaternary alloy drastically increases as the composition of As was increased by 0.01 atomic fraction and when the phosphorous concentration decreases from 0.4 to 0.38. The reason may be that the increase in As concentration hardens the lattice when phosphorous concentration was less and hardness decreases when phosphorous was increased.     

The magnetic properties of Be-codoped GaMnN grown via molecular beam epitaxy

GaMnN and Be-codoped GaMnN were grown via molecular beam epitaxy using a single GaN precursor and their structural and magnetic properties were examined. X-ray diffraction and superconducting quantum interference device (SQUID) measurements revealed that the grown layers are homogeneous without precipitates. The saturation magnetization of GaMnN has increased from ∼4 to ∼16 emu/cm³ via codoping of Be. The d–d exchange interaction between Mn atoms was discussed for the ferromagnetism of GaMnN.     

Effects of Y incorporation in TaON gate dielectric on electrical performance of GaAs metal–oxide–semiconductor capacitor

In this study, GaAs metal–oxide–semiconductor (MOS) capacitors using Y‐incorporated TaON as gate dielectric have been investigated. Experimental results show that the sample with a Y/(Y + Ta) atomic ratio of 27.6% exhibits the best device characteristics: high k value (22.9), low interfacestate density (9.0 × 10¹¹ cm^–2 eV^–1), small flatband voltage (1.05 V), small frequency dispersion and low gate leakage current (1.3 × 10^–5A/cm² at V_fb + 1 V). These merits should be attributed to the complementary properties of Y₂O₃ and Ta₂O₅:Y can effectively passivate the large amount of oxygen vacancies in Ta₂O₅, while the positively‐charged oxygen vacancies in Ta₂O₅ are capable of neutralizing the effects of the negative oxide charges in Y₂O₃. This work demonstrates that an appropriate doping of Y content in TaON gate dielectric can effectively improve the electrical performance for GaAs MOS devices.

Capacitance–voltage characteristic of the GaAs MOS capacitor with TaYON gate dielectric (Y content = 27.6%) proposed in this work with the cross sectional structure and dielectric surface morphology as insets.     

Rician noise reduction in magnetic resonance images using adaptive non-local mean and guided image filtering

This paper proposes a Rician noise reduction method for magnetic resonance (MR) images. The proposed method is based on adaptive non-local mean and guided image filtering techniques. In the first phase, a guidance image is obtained from the noisy image through an adaptive non-local mean filter. Sobel operators are applied to compute the strength of edges which is further used to control the spread of the kernel in non-local mean filtering. In the second phase, the noisy and the guidance images are provided to the guided image filter as input to restore the noise-free image. The improved performance of the proposed method is investigated using the simulated and real data sets of MR images. Its performance is also compared with the previously proposed state-of-the art methods. Comparative analysis demonstrates the superiority of the proposed scheme over the existing approaches.     

Quantum Systems Connected by a Time-Dependent Canonical Transformation

We study both classical and quantum relation between two Hamiltoniansystems which are mutually connected by time-dependent canonical transformation. One is ordinary conservative system and the other istime-dependent Hamiltonian system. The quantum unitary operatorrelevant to classical canonical transformation between the two systems are obtained through rigorous evaluation. With the aid of the unitary operator, we have derived quantum states of the time-dependent Hamiltonian system through transforming the quantum states of the conservative system. The invariant operators of the two systems are presented and the relation between them are addressed. We showed that there exist numerous Hamiltonians, which gives the same classical equation of motion. Though it is impossible to distinguish the systems described by these Hamiltonians within the realm of classical mechanics, they can be distinguishable quantum mechanically.     

Preparation and characterization of chitosan-clay nanocomposites with antimicrobial activity

Chitosan-montmorillonite nanocomposites were prepared by an ion exchange reaction between water soluble oligomeric chitosan and a Na⁺-montmorillonite. The chitosan-montmorillonite nanocomposites were rapidly prepared within 1 h due to the high affinity between the chitosan and the montmorillonite clay host. The basal spacings of the composites were in a range of 14.5-19.6 Å depending on the mixing ratio of chitosan to clay. According to the thermogravimetric analysis (TG) and powder X-ray diffraction analysis the thermal stability of chitosan was remarkably improved in the interlayer space due to the strong electrostatic interaction of cationic chitosan molecules with anionic silicate layers. From the antimicrobial activity test it was found that the nanocomposites showed a synergistic effect in the antimicrobial activity against to Escherichia coli and Staphylococcus aureus.     

Effects of in situ plasma treatment on optical and electrical properties of index-matched transparent conducting oxide layer

We investigated the effects of in situ plasma-treatment on optical and electrical properties of index-matched indium tin oxide (IMITO) thin film. To render the IMITO-coated surface hydrophilic and study the optical and electrical characteristics, we performed in situ oxygen plasma post-treatment without breaking vacuum. The 94.6% transmittance in the visible wavelength range (400-700 nm) increased on average to 96.4% and the maximum transmittance reached 98% over a broad wavelength range. The surface roughness and sheet resistance improved from 0.9 nm and 200 Ω/sq to 0.0905 nm and 100 Ω/sq, respectively, by in situ plasma post-treatment. We confirmed by contact angle measurement that the hydrophobic IMITO surface was altered to hydrophilic. The improved optical and electrical characteristics of in situ plasma-treated IMITO makes it adequate for high-resolution liquid crystal on silicon displays.     

Measurement of branching fractions for B-->eta(c)K(*) decays

We report measurements of branching fractions for charged and neutral B-->eta(c)K decays where the eta(c) meson is reconstructed in the K(0)(S)K+/-pi(-/+), K+K-pi(0), K(*0)K-pi(+), and pp; decay channels. The neutral B0 channel is a CP eigenstate and can be used to measure the CP violation parameter sin(2phi(1). We also report the first observation of the B0-->eta(c)K(*0) mode. The results are based on an analysis of 29.1 fb(-1) of data collected by the Belle detector at KEKB.     

Scaling properties of proton and antiproton production in sqrt[s(NN)]=200 GeV Au+Au collisions

We report on the yield of protons and antiprotons, as a function of centrality and transverse momentum, in Au+Au collisions at sqrt[s(NN)]=200 GeV measured at midrapidity by the PHENIX experiment at the BNL Relativistic Heavy Ion Collider. In central collisions at intermediate transverse momenta (1.5相似文献   

Elliptic flow of identified hadrons in Au+Au collisions at sqrt sNN =200 GeV

The anisotropy parameter (v(2)), the second harmonic of the azimuthal particle distribution, has been measured with the PHENIX detector in Au+Au collisions at sqrt[s(NN)]=200 GeV for identified and inclusive charged particle production at central rapidities (|eta|<0.35) with respect to the reaction plane defined at high rapidities (|eta|=3-4 ). We observe that the v(2) of mesons falls below that of (anti)baryons for p(T)>2 GeV/c, in marked contrast to the predictions of a hydrodynamical model. A quark-coalescence model is also investigated.