不同重叠排列方式的双层高温超导块材在永磁轨道上方的悬浮特性

研究了永磁轨道上方双层高温超导块材两种不同堆叠方式(籽晶生长线对齐方式和籽晶生长线错开方式)的悬浮特性。实验发现:这两种不同的堆叠方式对悬浮性能有不同的影响。随着场冷高度的增加,它们对悬浮性能的增加效应越来越弱,这种现象对于悬浮力来说尤其明显。场冷高度为10 mm和15 mm时,对悬浮力来说,籽晶生长线对齐堆叠方式与错开方式相比,第一次测量时前者减少的百分比为11.588%和0.870%,第二次测量时为12.693%和1.363%,第三次测量时为12.399%和1.370%。导向力也有类似的结论。经实验可以看出,可以通过优化每一块高温超导块材的具体摆放位置,来提高高温超导磁悬浮车的承载能力和稳定性。同时,这一结果对高温超导磁悬浮轴承、飞轮储能等悬浮间距小的场所也具有一定的参考价值。     

分子印迹材料选择性截留卷烟烟气中芳胺的研究

采用分子印迹技术合成了一种对1-萘胺有高度选择性的分子印迹聚合物材料。应用固相萃取吸附试验研究了该聚合物对1-萘胺及其结构类似物的选择特性,表明印迹聚合物材料对4种芳胺类物质表现出良好的选择性结合能力。将所制备的印迹聚合物按不同剂量添加到卷烟嘴棒中,考察其对卷烟烟气中芳胺的截留效果。结果显示,该分子印迹材料能选择性截留卷烟烟气中的1-萘胺、2-萘胺、3-氨基联苯和4-氨基联苯等烟气有害成分;当印迹聚合物添加量为50mg时,卷烟烟气中芳胺的降低率达到30%。     

UPLC测定烟叶中的氨基酸含量

采用UPLC法测定烟叶中氨基酸的含量。Waters Acquity UPLC BEH C18色谱柱(2.1mm×100mm,1.7μm),AccQ.Tag Ultraa Eluent A及AccQ.Tag Ultraa Eluent B梯度洗脱,流速为0.7mL·min-1,波长:248nm,柱温55℃。18种氨基酸在0.0030-0.204mg/mL范围内有良好的线性关系(r0.9994),平均回收率(n=6)为98.7%。该方法10min内18种氨基酸可完全分离且具有快速、准确、重复性好的特点。     

纳米二氧化钛的制备及Eu~(3+)掺杂发光研究

以钛酸四丁酯为前驱物,采用溶胶-凝胶法制备了四种不同配方Eu3+掺杂的TiO2纳米晶.利用扫描电镜(SEM)、EDS能谱、光致发光光谱对样品的形貌、成份及性能进行了表征.研究了退火温度、稀土Eu3+离子掺杂摩尔分数、溶剂乙醇量等对发光性能的影响,并对其发光机理进行了探讨.结果表明:稀土Eu3+掺杂TiO2纳米晶样品,掺杂均匀、颗粒大约在30～80nm;从EDS能谱分析可得Ti:O原子个数比并不是按化学计量TiO2满足1:2,这是因为在TiO2中形成的是Ti-O-Ti键,Eu3+离子很可能取代了Ti4+离子,同时又形成了氧空位,表明稀土Eu3+离子进入TiO2晶格中;样品的主发射峰在614nm(5D0→7F2)处发光最强,且在593nm(5D0→7F1)处出现了属于磁偶极跃迁的发射峰,制备Eu3+∶TiO2纳米晶的组分、退火温度、溶剂乙醇的量不同,发射光谱的强度也不同.     

基于迭代修正的液晶相控阵激光雷达波控数据获取

分析了影响液晶相控阵波控数据获取的几个关键因素,在此基础上通过计算期望相位面与实际相位面的相位差,提出一种基于迭代修正的波控数据获取方法,该方法可通过改变加载在液晶阵列上的参考电压或改变参考相位面实现。讨论了算法关键参数的选择。通过仿真进一步研究了液晶特性曲线范围和高斯初始相位对波控数据获取的影响。仿真结果表明:该方法能获得比较准确的波控数据;液晶特性曲线范围对波控数据的准确获取非常重要,当曲线范围较大时,液晶相控阵可补偿高斯光束引入相位的影响。     

基于Si-rich SiNx/N-rich SiNy多层膜结构的量子点构筑及发光特性

利用等离子体增强化学气相沉积法制备Si-rich SiN_x/N-rich SiN_y多层膜,分别使用热退火和激光辐照技术对多层膜进行退火,以构筑三维限制、尺寸可控、有序的硅纳米晶.实验结果表明,经退火后,纳米硅晶粒在Si-rich SiN_x子层内形成,其尺寸可由Si-rich SiN_x子层厚度调控.实验还发现,激光辐照技术相比于热退火能更有效地改善多层膜的微结构,提高多层膜的晶化率,以激光技术诱导晶化的Si-rich SiN_x/N-rich SiN_y多层膜作为有源层构建电致发光器件,在室温下观察到了增强的电致可见发光,并且发光效率较退火前提高了40%以上. 关键词： 氮化硅 多层膜 限制结晶 纳米晶硅     

Particle Simulation of Electrostatic Waves Driven by an Electron Beam

A one-dimensional electrostatic particle-in-cell simulation is performed to study electrostatic wave excitation due to an electron beam in a plasma system. The excited fundamental and harmonic waves are analyzed with the fast Fourier transformation and the wavelet transformation. The second harmonic is suggested to be generated by wave-wave coupling during the nonlinear evolution, which involves forward propagating and backward propagating Langmuir waves. Furthermore, the background electrons may be heated and accelerated by the electrostatic waves.     

Generation of Broadband High Harmonics through Linear Mode Conversion in Inhomogeneous Plasmas

The generation of high order harmonics from an inhomogeneous ovderdense plasma target irradiated by an ultrashort intense laser pulse is studied by numerical simulation. During such interaction, ultrafast electron bunches are generated and excite electron plasma oscillations as they pass through the overdense target. These plasma oscillations will emit high-frequency electromagnetic emission by linear mode conversion. Instead of the integer harmonies generation, the emission appears with a broadband and even continuous spectrum corresponding to the electron plasma frequency range of the inhomogeneous plasma density.     

Unconventional Geometric Quantum Gate in Circuit QED

We propose a scheme to implement an unconventional geometric phase gate in circuit QED, i.e. two superconducting charge qubits inside a superconducting transmission line resonator. The quantum operation depends only on global geometric features, and thus is insensitive to the state of the cavity mode.     

Magnetic Properties and Magnetoresistance of CdMnS：Au Based Structures Prepared by Co-evaporation

Polycrystalline CdMnS and CdMnS：Au films with hexagonal structure on Si（111） substrates are prepared by co-evaporation, and exhibit ferroelectric and ferromagnetic properties, respectively. Under optimized growth conditions, CdMnS：Au samples with an average crystallite size of 90nm and Mn concentration of 5.0at.% are obtained, and an all-semiconductor spin valve device of Co/Au/CdMnS：Au/CdMnS/Pt is fabricated. Electrical measurement of the device reveals the clear dependence of resistance on applied magnetic field, with a relative magnetoresistance of 0.06% and a switching field of 100 Oe at 77K.