Modules of piecewise polynomials and their freeness

Partially supported by NSF Grant DMS-9004123 and ARO through MSI Cornell (DAAG 29-85-C-0018)     

Characterization and Thermal Behaviour of Garnets from Almandine–Pyrope Series at 1200°C

Hyperfine Interactions - The natural garnets from almandine (Fe3Al2Si3O12)–pyrope (Mg3Al2Si3O12) series with the iron to magnesium atomic ratio ranging from 0.2 to 1 were characterised and...     

What is a design? How should we classify them?

Design theory crosses the boundary between mathematics and statistics, and includes a wide range of disparate types of design. In this paper we present a classification scheme which aims to include as many important types as possible, based on a balance among concept, representation and use.     

Investigating laser rapid manufacturing for Inconel-625 components

This paper presents an investigation of laser rapid manufacturing (LRM) for Inconel-625 components. LRM is an upcoming rapid manufacturing technology, it is similar to laser cladding at process level with different end applications. In general, laser-cladding technique is used to deposit materials on the substrate either to improve the surface properties or to refurbish the worn out parts, while LRM is capable of near-net shaping the components by layer-by-layer deposition of the material directly from CAD model. In the present study, a high-power continuous wave (CW) CO₂ laser system, integrated with a co-axial powder-feeding system and a three-axis workstation were used. The effect of processing parameters during LRM of Inconel-625 was studied and the optimum set of parameters for the maximum deposition rate was established employing Orthogonal L9 array of Taguchi technique. Results indicated that the powder feed rate and the scan speed contributed about 56% and 26%, respectively to the deposition rate, while the influence of laser power was limited to 10% only. Fabricated components were subjected to non-destructive testing (like—ultrasonic testing, dye-penetrant testing), tensile testing, impact testing, metallographic examinations and micro-hardness measurement. The test results revealed defect-free material deposition with improved mechanical strength without sacrificing the ductility.     

Spin dynamics investigated by EPR in the paramagnetic regime of La2/3Ca1/3Mn1−x Me x O3 (Me = Al, In) manganites

We report an electron paramagnetic resonance (EPR) investigation of the spin dynamics in the paramagnetic regime of the colossal magnetoresistive manganites La_2/3Ca_1/3Mn_1?x Me _x O₃ (Me=Al, In;x≤0.05). The temperature dependences of the EPR linewidth and integral intensity have been analyzed in terms of the bottleneck spin relaxation and small-polaron hopping models. The exchange coupling integral between Mn³⁺ and Mn⁴⁺ ions and the polaron activation energy decrease with increasing doping level. A discussion is given concerning the factors which could explain the observed changes.     

Lie-group theoretic method for analyzing interaction of discontinuous waves in a relaxing gas

A Lie group of transformations method is used to establish self-similar solutions to the problem of shock wave propagation through a relaxing gas and its interaction with the weak discontinuity wave. The forms of the equilibrium value of the vibrational energy and the relaxation time, varying with the density and pressure are determined for which the system admits self-similar solutions. A particular solution to the problem has been found out and used to study the effects of specific heat ratio and ambient density exponent on the flow parameters. The coefficients of amplitudes of reflected and transmitted waves after the interaction are determined.     

Microstructural assessment of InN-on-GaN films grown by plasma-assisted MBE

The structural properties of InN thin films, grown by rf plasma-assisted molecular beam epitaxy on Ga-face GaN/Al₂O₃(0001) substrates, were investigated by means of conventional and high resolution electron microscopy. Our observations showed that a uniform InN film of total thickness up to 1 μm could be readily grown on GaN without any indication of columnar growth. A clear epitaxial orientation relationship of , was determined. The quality of the InN film was rather good, having threading dislocations as the dominant structural defect with a density in the range of 10⁹–10¹⁰ cm⁻². The crystal lattice parameters of wurtzite InN were estimated by electron diffraction analysis to be a=0.354 nm and c=0.569 nm, using Al₂O₃ as the reference crystal. Heteroepitaxial growth of InN on GaN was accomplished by the introduction of a network of three regularly spaced misfit dislocation arrays at the atomically flat interface plane. The experimentally measured distance of misfit dislocations was 2.72 nm. This is in good agreement with the theoretical value derived from the in-plane lattice mismatch of InN and GaN, which indicated that nearly full relaxation of the interfacial strain between the two crystal lattices was achieved.