A comparison of silicon oxide and nitride as host matrices on the photoluminescence from Er+ ions

This paper compares the properties of silicon oxide and nitride as host matrices for Er ions.Erbium-doped silicon nitride films were deposited by a plasma-enhanced chemical-vapour deposition system.After deposition,the films were implanted with Er3+ at different doses.Er-doped thermal grown silicon oxide films were prepared at the same time as references.Photoluminescence features of Er3+ were inspected systematically.It is found that silicon nitride films are suitable for high concentration doping and the thermal quenching effect is not severe.However,a very high annealing temperature up to 1200° C is needed to optically activate Er3+,which may be the main obstacle to impede the application of Er-doped silicon nitride.     

The Improvement of Performance for Continuous-Variable Quantum Key Distribution with Imperfect Gaussian Modulation

Gaussian modulation is one of the key steps for the implementation of continuous-variable quantum key distribution (CVQKD) schemes. However, imperfection in the Gaussian modulation may introduce modulation noise that can deteriorate the performance of CVQKD systems. In this paper, we mainly investigate how to improve the performance of a CVQKD system from different aspects. First, we explore the several different origins, impacts and monitoring schemes for the modulation noise in detail. Then, we discuss the practical performance of a CVQKD system with an untrusted noise model and neutral party model, respectively. These analyses indicate that the neutral party model should be reasonably regarded as a general noise model, which will passively and greatly raise the performance of the system. Further, we propose a dynamic auto-bias control scheme to actively resist the modulation noise which comes from the drift of bias point of the amplitude modulator. Together these methods contribute to the improvement of the practical performance of CVQKD systems with imperfect Gaussian modulation.

     

Adaptive Synchronization of Fractional-Order Complex-Valued Uncertainty Dynamical Network with Coupling Delay

Compared with real-valued complex networks, complex-valued dynamic networks have a wider application space. In addition, considering the existence of time delay and uncertainty in the actual system, the synchronization problem of fractional-order complex-valued dynamic networks with uncertain parameter and coupled delay is studied in this paper. In particular, the uncertain parameter is correlated with time delay. By using fractional derivative inequalities and linear delay fractional order equations, the synchronization of uncertainty complex networks with coupling delay is realized. Sufficient conditions for global asymptotic synchronization are obtained. The obtained synchronization results are applicable to most complex network systems with or without delay. Finally, numerical simulations verify the effectiveness of the obtained results.

     

晶粒棱长、尺寸与拓扑学特征之间关系的Monte Carlo仿真研究

采用Potts模型Monte Carlo方法研究了晶粒棱长、尺寸与拓扑学特征之间的统计关系.结果表明,晶粒棱长与晶粒面数之间呈线性统计关系,并且平均N面体晶粒模型和Poisson-Voronoi组织均支持该结论.不同时刻的晶粒长大仿真数据表明,在准稳态晶粒长大阶段晶粒棱长的分布具有自相似性.个体晶粒的平均棱长随晶粒面数（或晶粒尺寸）的增加而逐渐增大,这说明一些理论模型中采用的“不同面数的晶粒平均棱长均相等”的假设具有局限性.仿真数据和纯铁实验数据均表明,晶粒尺寸与晶粒面数之间的统计关系表现为一条单调递增的凸曲线. 关键词： 晶粒棱长 晶粒尺寸 拓扑学 Monte Carlo仿真     

Study of top and bottom contact resistance in one organic field-effect transistor

This paper reports that the organic field-effect transistors with hybrid contact geometry were fabricated, in which the top electrodes and the bottom electrodes were combined in parallel resistances within one transistor. With the facility of the novel structure, the difference of contact resistance between the top contact geometry and the bottom contact geometry was studied. The hybrid contact devices showed similar characteristics with the top contact configuration devices, which provide helpful evidence on the lower contact resistance of the top contact configuration device. The origin of the different contact resistance between the top contact device and the bottom contact device was discussed.     

R717双蒸发温度回路三级混流制冷系统的研究设计

基于降低初投资、节约能源、与环境友好及符合国情的原则,从制冷剂选用和制冷系统构成两个方面,探究"超低温"冷库制冷系统的设计方案和适用技术路线,完成了以天然工质氨为制冷剂,双蒸发温度回路三级混流制冷系统的可行性研究及其关键设备的开发设计,并以此建造了具有-30℃和-60℃库温,库容分别为30吨和200吨双冷间的"超低温"实验冷库。试运行半年,完全达到设计要求,已通过山东省科技厅专家组技术鉴定。     

展示思维过程 指导思维调节——浅谈物理解题教学的策略

1 问题的提出 在解决一些综合性强或情景陌生的问题时,我们都遇到过这样的情况:读了半天题目,却不知道题目说了些什么,弄不清题目描述的物理情景是什么样的;有时,虽然初步了解了物理过程的大致情况,却不知道应该选用什么物理知识来解决该问题,找不到进入题目的切入点,不知道该如何"下手";又有时,有一定的思路,也能解决部分问题,但在解答过程中的某个地方又被"卡"住了,后面该怎么做却没有了办法.遇到这些难题时,我们应该如何展开思维,怎样使思维走到正确的道路上来,这是教师和学生都应该研究的问题.     

Circulation times of hepatocellular carcinoma cells by in vivo flow cytometry

Hepatocellular carcinoma （HCC） may metastasize to many organs. The survival rate is almost zero for metastatic HCC patients. Molecular mechanisms of HCC metastasis need to be understood better and new therapies must be developed. We have developed the ＂in vivo microscopy＂ to study the mechanisms that govern liver tumor cells spreading through the microenvironment in vivo. A recently developed ＂in vivo flow cytometer＂ combined with real-time confocal fluorescence imaging is used to assess spreading and the circulation kinetics of liver tumor cells. We measure the depletion kinetics of two related human HCC cell lines, high-metastatic HCCLM3 cells and low-metastatic HepG2 cells, which are from the same origin and obtained by repetitive screenings in mice. More than 60% of the HCCLM3 cells are depleted within the first hour. Interestingly, the low-metastatic HepG2 cells possess noticeably slower depletion kinetics. In comparison, less than 40% of the HepG2 cells are depleted within the first hour. The differences in depletion kinetics might provide insights into early metastasis processes.     

Meter-long CeO2/YSZ/Y2O3 buffer layers for YBCO coated conductors using DC reactive sputtering

This paper reports CeO₂/YSZ/Y₂O₃ buffer layers deposited on biaxially textured NiW substrates by DC reactive sputtering in a reel-to-reel system. The effect of partial pressure of water vapor (P_H2O) on surface morphology and orientation of the Y₂O₃ films was examined. The obtained CeO₂/YSZ/Y₂O₃ buffer layers exhibit a highly biaxial texture, with in- and out-of-plane FWHM values respectively in the range of 6.0–7.0° and 4.5–5.5°. Crystallographic consistency of CeO₂/YSZ/Y₂O₃ along meter length is excellent. Atomic force microscope observation (AFM) reveals a smooth, continuous and crack-free surface with a Root-mean-square roughness (RMS) lower than 10 nm.     

Runaway Electron Measurements in the EAST Tokamak

An experimental study of runaway electrons in the EAST tokamak has been performed by a recently developed multi‐channel hard x‐ray diagnostics based on NaI(TL) scintillator detectors. It is found that in the current quench phase, the inductive loop voltage plays an important role in the generation of runaway electrons. And the avalanche mechanism was the main mechanism for runaway electrons after the disruptions. The distribution and transportation of runaway electrons were also investigated by multi‐channel hard x‐ray diagnostics. It is also found that the intensity of runaway electrons emission in the core plasma was much higher than those in the downside of the cross‐section, while the emission intensity of runaway electrons in the core plasma was almost the same. Calculated shrinking coefficient of runaway electrons emission after the plasma disruption was about 26 m/s according to the experimental data (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)