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991.
992.
993.
运用第一性原理方法, 计算了B, P两种元素单掺杂和共掺杂的β -Si3N4材料的电子结构和光学性质. 结果表明: B掺杂体系的稳定性更高, 而P掺杂体系的离子性更强; 单掺和共掺杂均窄化带隙, 且共掺在禁带中引入深能级, 使局域态增强; 单掺杂体系介电函数虚部、吸收谱和能量损失谱各峰均发生红移、幅值减小, 而共掺后介电函数虚部主峰出现蓝移、能量损失峰展宽、高能区电子跃迁大大增强, 且控制共掺杂的B, P比例可获得较低的带电缺陷浓度. 相似文献
994.
Edgewise vibrations in wind turbine blades are lightly damped, and large amplitude vibrations induced by the turbulence may significantly shorten the fatigue life of the blade. This paper investigates the performance of roller dampers for mitigation of edgewise vibrations in rotating wind turbine blades. Normally, the centrifugal acceleration of the rotating blade can reach to a magnitude of 7–8g, which makes it possible to use this kind of damper with a relatively small mass ratio for suppressing edgewise vibrations effectively. The parameters of the damper to be optimized are the mass ratio, the frequency ratio, the coefficient of rolling friction and the position of the damper in the blade. The optimization of these parameters has been carried out on a reduced 2-DOF nonlinear model of the rotating wind turbine blade equipped with a roller damper in terms of a ball or a cylinder, ignoring the coupling with other degrees of freedom of the wind turbine. The edgewise modal loading on the blade has been calculated from a more sophisticated 13-DOF aeroelastic wind turbine model with due consideration to the indicated couplings, the turbulence and the aerodynamic damping. Various turbulence intensities and mean wind speeds have been considered to evaluate the effectiveness of the roller damper in reducing edgewise vibrations when the working conditions of the wind turbine are changed. Further, the optimized roller damper is incorporated into the 13-DOF wind turbine model to verify the application of the decoupled optimization. The results indicate that the proposed damper can effectively improve the structural response of wind turbine blades. 相似文献
995.
激光诱导击穿光谱结合标准加入法定量分析未知样品中铅含量 总被引:1,自引:0,他引:1
利用激光诱导击穿光谱结合标准加入法定量分析了铅蓄电池厂含铅污泥中重金属铅元素含量,标准加入法有效避免了外标法与内标法制作标准曲线时基质不同对LIBS检测结果的影响,且样品处理过程简单。实验采用中心波长为1 064 nm的Nd∶YAG脉冲激光器作为激发光源,以高分辨率、宽光谱段的中阶梯光栅光谱仪和增强型电荷耦合器件为谱线分离与探测器件,选取铅的PbⅠ:405.78 nm特征谱线作为分析线,以FeⅠ:404.58 nm特征谱线作为内标线进行结果计算。预实验确定较佳的实验条件后(激光脉冲能量:128.5 mJ,延时:2.5 μs,门宽:3 μs),对铅蓄电池厂的未知铅泥样品中铅元素进行定量分析,结果表明加入铅在0~25 000 mg·kg-1范围内谱线不会产生自吸收,PbⅠ:405.78 nm信号强度与铅加入量呈很好的线性关系,由此确定合适的铅加入量为0~25 000 mg·kg-1。在此基础上配制四个样品,基质均为铅蓄电池厂含铅污泥,加入铅浓度分别为5 000,10 000,15 000,20 000 mg·kg-1,每个样品设置三个平行样,验证实验重复性及可靠性,并与ICP-MS检测结果对比,结果直线外推误差为-14.8%。12个样品单次计算结果误差介于为-24.6%~17.6%之间,含铅量平均值为43 069 mg·kg-1,相对误差为-2.44%。 相似文献
996.
The grating fringe on the reference plane is broadened in the intersecting axis system because of oblique-angle projection. In order to solve this problem, we study the theoretical model of the temporal phase unwrapping method based on the fringe cycle correction. We also study the 3D shape measurement theoretical model of the larger complex objects after considering the coordinate deviation and lens distortion. Experimental results demonstrate that the fringe cycle on the reference plane can be corrected to a constant value, the lens distortion can be corrected, and 3D shape of larger complex objects can be accurately measured. 相似文献
997.
Comparison of total dose effects on SiGe heterojunction bipolar transistors induced by different swift heavy ion irradiation 下载免费PDF全文
The degradations in NPN silicon-germanium (SiGe) heterojunction bipolar transistors (HBTs) were fully studied in this work, by means of 25-MeV Si, 10-MeV C1, 20-MeV Br, and 10-MeV Br ion irradiation, respectively. Electrical parameters such as the base current (IB), current gain (β), neutral base recombination (NBR), and Early voltage (VA) were investigated and used to evaluate the tolerance to heavy ion irradiation. Experimental results demonstrate that device degradations are indeed radiation-source-dependent, and the larger the ion nuclear energy loss is, the more the displacement damages are, and thereby the more serious the performance degradation is. The maximum degradation was observed in the transistors irradiated by 10-MeV Br. For 20-MeV and 10-MeV Br ion irradiation, an unexpected degradation in Ic was observed and Early voltage decreased with increasing ion fluence, and NBR appeared to slow down at high ion fluence. The degradations in SiGe HBTs were mainly attributed to the displacement damages created by heavy ion irradiation in the transistors. The underlying physical mechanisms are analyzed and investigated in detail. 相似文献
998.
Xiong Jianfei 《数学学报(英文版)》1996,12(4):415-432
In this paper we classify (2,2)-stable unfoldings of map germs with codimensions 4 by means of the algorithm given in [4] by Wassermann. 相似文献
999.
成功制备了超导临界温度为27 K的K0.8Fe2Se2晶体,并详细研究了晶体c轴向的载流子输运特性.结合X射线衍射、光学显微镜下的形貌、变温电阻率的测试结果表明,样品存在有"相分离",但是这类层状铁基超导体材料的两个相不是简单沿c轴向层状交替排布的,而应该是沿着c轴向存在弱联系的金属相链接通路,金属相部分形成近3维的空间网状链接模式.热导率测试和复阻抗谱z(ω,T0)的研究表明超导晶体沿着c轴方向存在有大量的相界面,所束缚的极化电荷致使相对介电常数达到106数量级,相应地在10 MHz附近出现负的相位特征. 相似文献
1000.