Improved direct measurement of the parity-violation parameter Ab using a mass tag and momentum-weighted track charge

We present an improved direct measurement of the parity-violation parameter A(b) in the Z boson-b-quark coupling using a self-calibrating track-charge technique applied to a sample enriched in Z-->bb events via the topological reconstruction of the B hadron mass. Manipulation of the Stanford Linear Collider electron-beam polarization permits the measurement of A(b) to be made independently of other Z-pole coupling parameters. From the 1996-1998 sample of 400,000 hadronic Z decays, produced with an average beam polarization of 73.4%, we find A(b)=0.906+/-0.022(stat)+/-0.023(syst).     

III-Nitride Quantum Devices—Microphotonics

Photonic devices based on III-nitrides offer benefits such as UV/blue emission, large band offsets of InN/GaN/AlN heterostructures allowing novel quantum well (QW) device design, and inherently high-emission efficiencies. Furthermore, due to their mechanical hardness and larger band gaps (when compared with conventional semiconductor devices), III-nitride-based devices may operate at much higher temperatures and voltages/power levels for any dimensional configuration and in harsher environments than other semiconductor devices and are expected to provide much lower temperature sensitivities. These are crucial advantages for many applications. Over the last decade, the physics of microsize photonic devices has been investigated. New physical phenomena and properties are expected to dominate as the device size scales down. The microsize light emitters offer benefits over edge emitters such as the ability to create arrays of individually controllable pixels on a single chip, enhanced quantum efficiency, and greatly reduced lasing threshold. Rapid progress in the area of III-nitride microphotonics has been made. The growth and fabrication of micron and submicron size photonic structures based on III-nitride wide bandgap semiconductors has been achieved, and the technology has made it possible to integrate arrays of optical elements to form active photonic-integrated devices. One example is an interconnected µ-LED with enhanced emission efficiency over the conventional LEDs for the same device area. Another example is a µ-LED array with independently addressed pixels or III-nitride microdisplay. III-nitride microdisplay may offer performance that is superior to microdisplays fabricated from liquid crystals and organic LEDs. The third example presented is III-nitride UV Focal Plane Arrays (UV-FPA) of detectors. So far, the operation of AlGaN UV-FPA with size up to 256×256 pixels with 30×30?μm² unit cells has been demonstrated. Together with the nature of their two-dimensional array, these active micro-photonic devices show promise in many important applications, such as optical communications, signal and image processing, optical interconnects, computing, enhanced energy conversion and storage, chemical, biohazard substances, and disease detection, missile and shellfire, atmospheric ozone-level, and flame sensing. III-nitride microlens arrays have been fabricated successfully for blue and UV wavelength applications on GaN and AlN. The successful fabrication of microlens arrays based on III-nitride materials opens the possibility for monolithically integrating nitride-based micro-size photonic devices, as well as coupling light into, out of, and between arrays of III-nitride emitters and detectors, especially for short wavelengths covering the green-blue to deep UV (200?nm) region. Nanofabrication and characterization of photonic crystals with diameter/periodicity as small as 100/180?nm on InGaN/GaN MQW has been achieved. An unprecedented maximum enhancement factor of 20 was obtained under optical pumping. Single-mode ridged optical waveguide devices using GaN/AlGaN heterostructures have been designed, fabricated, and characterized for operation in 1550?nm wavelength window. The feasibility of developing novel photonic integrated circuits based on III-nitride wide bandgap semiconductors for fiber-optical communications has been investigated.     

Preparation of hybrid film with superhydrophobic surfaces based on irregularly structure by emulsion polymerization

A superhydrophobic surface originated from quincunx-shape composite particles was obtained by utilizing the encapsulation and graft of silica particles to control the surface chemistry and morphology of the hybrid film. The composite particles make the surface of film form a composite interface with irregular binary structure to trap air between the substrate surface and the liquid droplets which plays an essential role in obtaining high water contact angle and low water contact angle hysteresis. The water contact angle on the hybrid film is determined to be 154 ± 2° and the contact angle hysteresis is less than 5°. This is expected to be a simple and practical method for preparing self-cleaning hydrophobic surfaces on large area.     

Investigation of proton-proton short-range correlations via the 12C(e,e'pp) reaction

We investigated simultaneously the 12C(e,e'p) and 12C(e,e'pp) reactions at Q2=2 (GeV/c)2, xB=1.2, and in an (e, e'p) missing-momentum range from 300 to 600 MeV/c. At these kinematics, with a missing momentum greater than the Fermi momentum of nucleons in a nucleus and far from the delta excitation, short-range nucleon-nucleon correlations are predicted to dominate the reaction. For (9.5+/-2)% of the 12C(e,e'p) events, a recoiling partner proton was observed back-to-back to the 12C(e,e'p) missing-momentum vector, an experimental signature of correlations.     

Laser-diode excited intense upconversion luminescence of Er^3＋ in bismuth-lead-germanate glasses

We have investigated infrared-to-visible upconversion luminescence of Er^3＋ in bismuth-lead-germanate glasses. The UV cutoff wavelength is shortened while its lifetime is increased almost linearly, with PbF2 substituting for PbO in the bismuth-lead germanate glasses. Three emissions centred at around 529, 545 and 657 nm are clearly observed, which are identified as originating from the ^2H11/2→^4 I15/2,^4S3/2→^4 I15/2 and ^4 F9/2 →^4 I15/2 transitions, respectively. It is noted that all the upconversion emission intensities increase with PbF2 concentration increasing. The ratio between the intensities of red and green emissions increases with the increasing of PbF2 content. Energy transfer processes and nonradiative phonon-assisted decays account for the populations of the ^2 H11/2,^4 S3/2 and ^4F 9/2 levels. The quadratic dependence of fluorescence on excitation laser power confirms a two-photon process to contribute to the upconversion emissions.     

用于原子能级结构研究的激光共振电离光谱系统

激光共振电离光谱技术是一种利用一路或多路激光将待测原子选择性共振激发与电离,通过测量离子信号来研究原子能级结构的光谱技术。研建了一套激光共振电离光谱装置,用于原子高激发态能级结构参数的测量。分别从该装置的总体结构、关键技术和应用实例等方面进行了详细介绍。该套装置主要包括高调谐精度的染料激光器系统、高效的激光离子源系统和高分辨率的飞行时间质量分析器。染料激光器系统包括3台多纵模可调谐染料激光器和1台单纵模可调谐染料激光器,均为脉冲工作方式,重复频率为10 kHz,泵浦源均为532 nm的Nd∶YAG固体激光器。激光离子源系统包括原子化源、激光与原子相互作用区和离子光学透镜组三部分组成,样品在原子化源中被电加热实现原子化,喷射出的原子被激光选择性激发、电离,产生的离子被离子传输透镜整形成能量分散小、束窄的离子束。飞行时间质量分析器采用了反射式结构设计、脉冲垂直推斥技术和偏转板调节技术。利用此装置,实验测定了U原子的自电离态光谱,获得了U原子一条较佳的三色三光子共振电离路径,对应激光的波长分别为591.7,565.0和632.4 nm。此系统还可用于测量同位素位移和原子超精细结构等参数。另外,由于此系统中联用了质量分析器,因此可用于样品多元素分析、痕量元素分析、同位素丰度分析。     

基于邻域贡献权值细化的圆心亚像素定位算法

针对传统的圆心算法过程复杂、定位精度受初始边缘提取效果影响较大等问题,提出了一种基于邻域贡献权值细化的圆心亚像素定位算法。首先引入邻域贡献权值系数,改进传统非极大值抑制法,细化边缘;然后在边缘点的梯度方向对灰度值进行高斯拟合,确定亚像素边缘位置;最后针对边缘突变点提出了基于随机抽样一致的最小二乘法来拟合圆心。实验结果表明,该算法具有较好的精度和稳定性,圆心的提取精度可以达到0.1个像素。     

LUND面积定律产生子在R值测量中的应用

对Lund弦碎裂模型强子化面积定律严格求解,得到e⁺e^－湮没产生少体初始强子态的遍举分布.基于面积定律的新产生子LUARLW在2—5GeV能区的模拟结果与BES数据的多种谱分布符合很好,用于BES上强子产生总截面测量的强子探测效率的估计.     

GaAs异质结材料BOA光开关特性分析

本文较为详细地讨论了GaAs异质结材料BOA型光开关的特性;并应用转移矩阵理论和有效折射率法计算和分析了电极结构与器件半波电压和串音度的关系.结果表明:通过优化设计电极的宽度可以获得BOA型光开关最小的半波电压;电极位置的对称性对器件串音度起决定性的影响.采用自对准工艺技术可以比较准确的控制电极的位置.分析表明:要得到<-40dB的串音度,电极位置偏差必须小于0.3μm.