非线性耗散对亚稳态系统量子衰变速率的影响

发展了一种快速傅里叶变换路径积分方法，研究非线性耗散系统的量子衰变速率，得到了Bounce轨道的作用量S_B，即衰变速率的指数因子.在系统与环境存在非线性耦合f(x)=tanh［λ(x-x_b)］的情形下，发现其对衰变速率具有抑制作用.指数因子随温度T的关系不再满足S_B=a［1-b(T/T_c)²］法则；与通常的线性耗散情形相比，跨越温度T_c回升，即系统更早地进入穿透区域. 关键词： 量子衰变 非线性耦合 路径积分 快速傅里叶变换     

双螺旋叠栅条纹检测光束准直性的两种方法

介绍双螺旋叠栅条纹检测光束准直性的基本原理,进一步就双螺旋叠栅条纹的特征参量与被测光束发散角(即光束准直精度)的关系进行分析和推导。在分析双螺旋叠栅条纹进行时,首先采用频域低通滤波提取纯叠栅条纹,然后提取纯叠栅条纹的特征参量。提出两种特征参量的提取方法,一种依次进行傅里叶变换计算相位信息的傅里叶变换方法,另一种是受传统时间相移算法启发而提出的空间相移算法,讨论了在两种方法中极坐标的重采样问题和相应的计算公式,并进行了计算机模拟。结果表明,傅里叶变换方法和空间相移算法实质都是获取叠栅条纹全场趋势的平均值,使最终光束发散角的检测具有很高的精度,对自成像条纹周期的检测误差在±2.8‰以内。     

失谐对耗散耦合腔阵列体系超流-绝缘相变的影响

利用平均场理论和微扰论解析求解了失谐存在且环境作用下Jaynes-Cummings-Hubbard模型的哈密顿量,得到了体系序参量的解析表达式,并讨论了失谐对体系超流一绝缘相变的影响,研究结果表明:调节失谐可以改变腔间的有效排斥势和系统的临界隧穿率,实现系统在超流态和绝缘态之间转变,结合耗散耦合腔阵列的输运性质探讨了失谐对序参量取值的影响,结果显示:沿失谐负支随着失谐的增大,序参量会经历先增后减的变化。     

Highly stable amorphous indium‐zinc‐oxide thin‐film transistors with back‐channel wet‐etch process

The stabilities of amorphous indium‐zinc‐oxide (IZO) thin film transistors (TFTs) with back‐channel‐etch (BCE) structure are investigated. A molybdenum (Mo) source/drain electrode was deposited on an IZO layer and patterned by hydrogen peroxide (H₂O₂)‐based etchants. Then, after etching the Mo layer, SF₆ plasma with direct plasma mode was employed and optimized to improve the bias stress stability. Scanning electron microscopy and X‐ray photoelectron spectroscopic analysis revealed that the etching residues were removed efficiently by the plasma treatment. The modified BCE‐ TFTs showed only threshold voltage shifts of 0.25 V and –0.20 V under positive/negative bias thermal stress (P/NBTS, V_GS = ±30 V, V_DS = 0 V and T = 60 °C) after 12 hours, respectively. (© 2014 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

无线激光通信在高速视频传输中的应用

利用无线激光通信传输速率高的优势,设计并实现了一套622Mbps视频传输系统。将视频转换、数据处理、激光收发等功能集中在单块电路板上,提高了灵活性。使用片内异步先进先出队列（FIFO）组成乒乓操作,对连续视频数据流进行有效切换控制。采用曼彻斯特编码较好地从接收信号中恢复出数据和时钟,有利于接收串行数据流的边界检测和同步。实验表明,本系统可以稳定地传输视频,满足地面距离应用的需要,为进一步研究激光通信各项技术提供了平台。     

一种数字控制单相全桥逆变电路运动行为分析方法研究

考虑到数字控制单相全桥逆变电路PWM调制方法和滤波器、负载结构的多样性, 以及利用状态转移矩阵对系统运动行为分析方法的局限性. 通过解析表达状态转移矩阵中的元素, 本文提出了一种可以解析描述具有N个状态变量、一个开关周期内M次拓扑 变化的数字控制单相全桥逆变电路(简称N-M数字控制单相全桥逆变电路)系统参数 与运动行为关系的分析方法. 以3-3数字控制单相全桥电压逆变电路为例对上述分析方法进行了验证, 推导出了该三阶电路发生Hopf分岔的解析判别式、稳定范围及Hopf分岔振荡频率的解析表达式, 并通过Simulink仿真及电路实验证明了理论分析的正确性.     

Evaluation and prediction of the degradation of space Si solar cells induced by a low-earth-orbit radiation environment

Space-graded silicon solar cells are evaluated by 1 MeV and 2 MeV electron-irradiation. The mean degradation of the maximum power (P_max) is presented and analyzed. The degradation at both electron energies has been correlated with the displacement damage dose (D_d). A good linearity between the electron D_d and the mean P_max degradation is obtained. The concept of D_d has also been used to predict the Si solar cell response in a low-earth-orbit (Altitude 799 km, Inclination 99^o) radiation environment, considering the shielded effect of a 120 μ m-thick silica coverglass on reducing the radiation. Compared with the on-orbit data from a Si solar array of a Chinese satellite (duration from April 2007 to July 2010), a good match can be found between the on-orbit data and the predicted results using D_d methodology, indicating the method is appropriate for evaluating the radiation damage of the solar cells, and also to provide a new technique for studying radiation effects on the optoelectronic detectors used in many high energy physics applications, where harsh radiation environments produce damage in optoelectronic device materials.     

High-temperature dielectric properties of Gd2CuO4 ceramics

A sample of Gd₂CuO₄ (GCO) has been prepared through the solid state reaction technique. Dielectric properties of this material have been measured in detail as functions of temperature (between 285 and 450 K) and frequency (20 Hz-10 MHz). A step-like increase below 330 K and a broad peak around 360 K were observed in the real part of the permittivity (ε′) which were found to be originated from the oxygen vacancy hopping motions that cause a dipolar relaxation, followed by a Maxwell-Wagner relaxation as the hopping carriers are blocked by the interfaces and surfaces of the sample.     

二极管泵浦Nd:YAG板条双通放大器技术研究

对二极管泵浦NdYAG板条双通放大器进行了理论设计和数值计算.在注入能量1 mJ,小信号增益为0.23 cm-1时理论计算结果为双通放大器输出能量为229.8 mJ.实验在10 Hz时获得单脉冲输出能量216 mJ;400 Hz时获得单脉冲输出能量203.4 mJ,光束质量因子小于5,激光脉宽为16.9 ns.实验结果与理论计算基本吻合.用相位共轭镜取代0°全反镜,超高斯镜取代振荡级输出镜,并采用镜面均匀的光学器件可以改善光束质量及光斑均匀性.     

Demonstration of the approximation of eliminating atomic excited populations in an atom-cavity system

Using the master equation approach to a V-type three-level atom inside a high-finesse single-mode cavity in the strong coupling condition,we demonstrate the approximation of eliminating populations of atomic excited states,which is widely used in the field of the atom-cavity systems [Hechenblaikner G,Gangl M,Horak P and Ritsch H 1998 Phys.Rev.A 58 3030];Liu L W,Tan T and Xu Y 2008 J.Mod.Opt.56 968;Cho J,Angelakis D G and Bose S 2008 Phys.Rev.A 78 062338.This is reflected in the deviation of the population δ,of which the value is 10～(-3)～10～(-2).We further find the deviation of the dipole force and demonstrate that the deviation of atomic population will not notably affect the dipole force of the atom in the strong coupling condition.A relevant experimental case is also presented.