Fabrication of widely tunable ridge waveguide DBR lasers for WDM-PON

We report the fabrication of widely tunable ridge waveguide distributed Bragg reflector(DBR) lasers with InGaAsP butt-joint as grating material. The shape of the butt–joint interface is found to have significant effect on the properties of the lasers. It is shown that irregular mode jumps during wavelength tuning can be avoided by a V-shaped butt–joint interface. From the fabricated device, 23 channels with 0.8 nm spacing and greater than 35 dB side mode suppression ratios are obtained. The different tuning characteristics of the ridge waveguide and the previously reported buried ridge stripe DBR lasers are discussed. Combined with the wide tuning range and the simple structure, the ridge waveguide DBR lasers are promising for use in wavelength division multiplexing passive optical networks(WDM-PONs).     

Monte Carlo simulation of glandular dose in a dedicated breast CT system

A dedicated breast CT system (DBCT) is a new method for breast cancer detection proposed in recent years. In this paper, the glandular dose in the DBCT is simulated using the Monte Carlo method. The phantom shape is half ellipsoid, and a series of phantoms with different sizes, shapes and compositions were constructed. In order to optimize the spectra, monoenergy X-ray beams of 5-80 keV were used in simulation. The dose distribution of a breast phantom was studied: a higher energy beam generated more uniform distribution, and the outer parts got more dose than the inner parts. For polyenergtic spectra, four spectra of Al filters with different thicknesses were simulated, and the polyenergtic glandular dose was calculated as a spectral weighted combination of the monoenergetic dose.     

Model study on steady heat capacity in driven stochastic systems

We explore two- and three-state Markov models driven out of thermal equilibrium by non-potential forces, to demonstrate basic properties of the steady heat capacity based on the concept of quasistatic excess heat. It is shown that large enough driving forces can make the steady heat capacity negative. For both the low- and high-temperature regimes we propose an approximative thermodynamic scheme in terms of “dynamically renormalized” effective energy levels.     

中温固体氧化物燃料电池的基本性质测量

介绍了固体氧化物燃料电池的工作原理,测量了中温薄膜固体氧化物燃料电池的开路电压、放电曲线及功率曲线,并分析了电池内阻随电流密度的变化.     

微波场中Josephson结的微波发射与吸收研究

采用数值仿真方法,研究微波场中约瑟夫森结微波感应台阶处的功率特性。发现微波场中约瑟夫森结不止吸收辐射,也发射辐射的情况。得到微波辐照和结电阻对功率吸收和发射的影响规律。结果表明,处于发射功率的状态对应的偏置电流范围占整个台阶总电流范围的比例可以趋于50%。这一发现对约瑟夫森结理论和应用研究具有重要的意义。     

多孔脆性介质冲击波压缩破坏的细观机理和图像

本文采用一种具有良好定量性质的离散元模型研究了带孔洞的各向同性脆性介质在细观尺度上的压缩破坏特征. 通过对孤立孔洞、三种简单的孔洞排布方式和大量孔洞随机排布等几种情况的模拟, 认识到了剪切破坏和局域拉伸破坏是冲击波压缩下多孔介质的基本破坏模式; 孔洞之间的损伤贯通会促进孔洞在较低应力下发生塌缩, 但损伤区的应力松弛过程却会对一定范围内的介质起到损伤屏蔽作用; 不同区域中损伤促进和损伤屏蔽的综合效果是在多孔脆性介质中形成一种高损伤区与低损伤区间错排布的奇特损伤分布. 本文的研究结果为深入理解脆性材料冲击波压缩破坏的演化过程和机理提供了细观尺度上的初步物理图像.     

Sequential over-barrier ionization of multi-electron atoms in the tens-to-hundreds keV/u energy range

Our previous work on the classical over-barrier ionization model for helium double ionization is extended to the complex multi-electron system of Ne.The total and q-fold ionization cross sections are calculated at energies ranging from a few tens to several hundred keV/u.The calculation results are in good agreement with the experimental data,and the energy dependence of the cross sections suggests that the multi-ionization of a strong perturbated complex atom is probably the sequential over-barrier ionization process.     

基于动态溶胀法制备中空聚合物微球

以表面带正电荷的m级聚苯乙烯微球为种子,经过甲苯、二乙烯基苯溶胀,聚合与包覆等过程制备了直径约5 m的中空聚合物微球。研究了溶剂类型、溶剂用量对动态溶胀法制备的中空聚合物微球粒径、分布和结构的影响,讨论了中空聚合物微球的形成机理。结果表明:添加一定量甲苯、二甲苯等挥发性溶剂是动态溶胀法形成中空聚合物微球的前提;甲苯用量越多,溶胀后形成的中空结构越明显,孔径越大;选择低溶解性的二甲苯溶剂更有利于中空结构的形成。     

基于Geant 4的介质深层充电电场计算

基于Geant4模拟了电子在Teflon介质中的电荷输运过程,获得了其内部的电流密度、剂量率和电荷沉积量沿深度的分布曲线,进而利用电荷连续性方程、泊松方程和深层俘获方程求解出Teflon中高能量、小束流电子辐照下的电场分布. 将介质平板充电过程简化为屏蔽铝板与分层介质组成的Geant4模型,电子源为1.0MeV,0.1pA/cm²的平面源. 通过记录经过各层介质的电子电量和各层介质内沉积能量和电子数目,用统计平均的方法获得了介质内电流密度、剂量率和电荷沉积量沿深度的分布规律. 介质内 关键词： 卫星 介质深层充电 Geant4 电场     

p型掺杂1.3μm InAs/GaAs量子点激光器的最大模式增益特性的研究

对p型掺杂13 μm InAs/GaAs量子点激光器的最大模式增益进行了实验和理论分析.实验上,测量了不同腔长激光器阈值电流密度与总损耗的对应关系,拟合出的最大模式增益为175 cm^-1,与相同结构非掺杂量子点激光器的最大模式增益一致.同时理论分析表明,p型掺杂对InAs/GaAs量子点激光器的最大模式增益并无影响,并且最大模式增益的计算结果与实验值相符.具有较小高度或高宽比的量子点能达到更高的最大模式增益,而较高的最大模式增益对p型掺杂13 μm InAs/GaAs自组织量子点激光器在光通信系统中的应用具有重要意义. 关键词： 最大模式增益 p型掺杂 InAs/GaAs量子点激光器