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51.
IR spectroscopy and viscometry data have shown that poly(acrylic acid) and poly(methacrylic acid) form complexes with agar-agar in aqueous solutions as they do with other polysaccharides. The polyacid-agar-agar complexes are typical hydrogels. The swelling index of hydrogels based on the poly(methacrylic acid)-agar-agar complex has been found to be markedly lower than that of poly(acrylic acid)-agaragar complex. The hydrogels based on the complex of cross-linked poly(acrylic acid) with agar-agar can be of practical interest as polymeric carriers for drugs.  相似文献   
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Saturation properties of the dyes in the presence of excited-state absorption and amplified spontaneous emission in the dye are studied theoretically. In the analysis the above two effects are included separately and it is shown that they are deleterious to the pulse-shortening capabilities of the dyes. It is also shown that in the conventional single-pass shortening of laser pulses with saturable dyes large pulse shortening ratios (20) may be expected if the dye saturation is combined with a properly delayed dye generation.  相似文献   
54.
Summary The wave propagation direction of microturbulence in a tokamak plasma has been accurately measured by application of a new homodyne spectroscopy technique. This method has been used in conjunction with a collective far-infrared laser scattering experiment on TEXT. The low-frequency density fluctuations are observed to propagate primarily in the electron diamagnetic drift direction, however, the broadband spectra also possess an appreciable level of fluctuations traveling in the ion drift direction. Application of the homodyne spectroscopy technique represents an inexpensive and easily implemented alternative to the more technically demanding heterodyne schemes available in the far-infrared.  相似文献   
55.
In a experiment at the CERN SPS charged hyperon beam using incident Ξ?, we have obtained evidence for the production of two Ω* resonances decaying into Ξ?π+ K ?, with the following parameters:M 1=2251±12,Γ 1=48±20 MeV/c2, 78 ±23 events, andM 2=2284±12,Γ 2=26±23 MeV/c2 45±10 events. The first state is also observed as a 4.2σ effect in a subsample which contains an additionalK + orK 0 in the final state. Production cross sections and branching ratios to Ξ* K ? and Ξ? K * are presented.  相似文献   
56.
The validity of local parton-hadron duality within the framework of HERWIG and JETSET event generators is investigated. We concentrate one + e annihilations in LEP 2 energy range as these interactions provide theoretically the cleanest condition for the discussion of this concept. We conclude that the concept of local parton-hadron duality is not valid in either of the two generators considered.  相似文献   
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The KP hierarchy is hamiltonian relative to a one-parameter family of Poisson structures obtained from a generalized Adler map in the space of formal pseudodifferential symbols with noninteger powers. The resulting W-algebra is a one-parameter deformation of WKP admitting a central extension for generic values of the parameter, reducing naturally to W n for special values of the parameter, and contracting to the centrally extended W1+, W and further truncations. In the classical limit, all algebras in the one-parameter family are equivalent and isomorphic tow KP. The reduction induced by setting the spin-one field to zero yields a one-parameter deformation of which contracts to a new nonlinear algebra of the W-type.Address after October 1993: Queen Mary and Westfield College, UK  相似文献   
59.
The effect of the germanium coverage prior to the epitaxial growth of 5 μm thick 3C-SiC on Si(100) substrates were evaluated with Atomic Force Microscopy and μ-Raman spectroscopy. The 3C-SiC layers were grown by atmospheric pressure chemical vapor deposition via a special procedure leading to layers with compressive instead of tensile stress. The Ge amount was varied from 0 up to 2 ML. The obtained results showed that the residual stress inside the layers is shifted in the compressive direction; the crystalline quality is improved with the Ge introduction but on the account of the surface roughness. These results open the route for the use of Ge-modified Si(100) as a potential substrate in order to improve the heteroepitaxial growth of 3C-SiC on silicon substrates.  相似文献   
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