On the existence of <Emphasis Type="Bold">1, 3</Emphasis>P <Emphasis Type="Bold">o</Emphasis> resonances in H<Superscript>-</Superscript> between n = 2 and 3 H thresholds

We examine the influence of relativistic and QED effects on the existence of the ^1,3P ^o H^- resonances between n = 2 and 3 hydrogen thresholds, the relativistic and QED corrections and the coupling effects between the high singlet and triplet states are considered as first-order perturbations. We firstly obtain accurate non-relativistic resonant energies and widths of fifteen ¹P ^o resonances, and fifteen ³P ^o resonances. The fifteen ¹P ^o resonances are classified to be ₃ (2, 0) ^- _n ( 4 ? n ? 12) and ₃ (1, 1) ⁺ _n ( 3 ? n ? 8). The fifteen ³P ^o resonances are classified to be ₃ (2, 0) ⁺ _n ( 3 ? n ? 12) and ₃ (1, 1) ^- _n ( 4 ? n ? 8). We found there exist six Feshbach resonances for ₃ (2, 0) ^- _n (¹P ^o ) series, four Feshbach resonances for ₃ (1, 1) ⁺ _n (¹P ^o ) series, seven Feshbach resonances for ₃ (2, 0) ⁺ _n (³P ^o ) series, and three Feshbach resonances for ₃ (1, 1) ^- _n (¹P ^o ) series. Received 22 February 2002 Published online 24 September 2002     

Analysis of semiconducting materials by high-resolution radiofrequency glow discharge mass spectrometry

The analytical capabilities of a high-resolution mass spectrometer in combination with a 13.56 MHz glow discharge ion source for the analysis of semiconducting materials (silicon carbide and gallium arsenide) were studied. It was shown that single positively charged ions of sample material have about 10 eV higher average energy than the ions of the discharge and residual gas. Therefore effective energy separation of the ions of analyte from the ions of the discharge and residual gas was achieved by adjusting the ion transfer optics (breadth and position of energy slit), which improves the analytical capabilities of the developed method.Some analytical applications are presented to illustrate the performance of r.f. GDMS for the bulk analysis of semiconducting materials. The results of the trace element analysis of gallium arsenide and silicon carbide samples are compared with data of independent methods (LIMS, ICP-AES, SIMS).Dedicated to Professor Dr. rer. nat. Dr. h.c. Hubertus Nickel on the occasion of his 65th birthdayOn leave from the Institute of Inorganic Chemistry, 630090 Novosibirsk, Russia     

Universality in some classical Coulomb systems of restricted dimension

Coulomb systems in which the particles interact through thed-dimensional Coulomb potential but are confined in a flat manifold of dimensiond–1 are considered. The actual Coulomb potential acting is defined by particular boundary conditions involving a characteristic macroscopic distanceW in the direction perpendicular to the manifold: either it is periodic of periodW in that direction, or it vanishes on one ideal conductor wall parallel to the manifold at a distanceW from it, or it vanishes on two parallel walls at a distanceW from each other with the manifold equidistant from them. Under the assumptions that classical equilibrium statistical mechanics is applicable and that the system has the macroscopic properties of a conductor, it is shown that the suitably smoothed charge correlation function is universal, and that the free energy and the grand potential have universal dependences onW (universal means independent of the microscopic detail). The casesd=2 are discussed in detail, and the generic results are checked on an exactly solvable model. The cased=3 of a plane parallel to an ideal conductor is also explicitly worked out.Laboratoire associé au Centre National de la Recherche Scientifique-URA D0063.     

Geometric quantization of topological gauge theories

We show that Abelian gauge theories in 2+1 space-time dimensions with the introduction of a topological Chern-Simons term can be quantized with the use of the symplectic formalism. The consistency of our results are verified by the agreement with the ones from the Dirac case.