Analysis of semiconducting materials by high-resolution radiofrequency glow discharge mass spectrometry

The analytical capabilities of a high-resolution mass spectrometer in combination with a 13.56 MHz glow discharge ion source for the analysis of semiconducting materials (silicon carbide and gallium arsenide) were studied. It was shown that single positively charged ions of sample material have about 10 eV higher average energy than the ions of the discharge and residual gas. Therefore effective energy separation of the ions of analyte from the ions of the discharge and residual gas was achieved by adjusting the ion transfer optics (breadth and position of energy slit), which improves the analytical capabilities of the developed method.Some analytical applications are presented to illustrate the performance of r.f. GDMS for the bulk analysis of semiconducting materials. The results of the trace element analysis of gallium arsenide and silicon carbide samples are compared with data of independent methods (LIMS, ICP-AES, SIMS).Dedicated to Professor Dr. rer. nat. Dr. h.c. Hubertus Nickel on the occasion of his 65th birthdayOn leave from the Institute of Inorganic Chemistry, 630090 Novosibirsk, Russia     

Universality in some classical Coulomb systems of restricted dimension

Coulomb systems in which the particles interact through thed-dimensional Coulomb potential but are confined in a flat manifold of dimensiond–1 are considered. The actual Coulomb potential acting is defined by particular boundary conditions involving a characteristic macroscopic distanceW in the direction perpendicular to the manifold: either it is periodic of periodW in that direction, or it vanishes on one ideal conductor wall parallel to the manifold at a distanceW from it, or it vanishes on two parallel walls at a distanceW from each other with the manifold equidistant from them. Under the assumptions that classical equilibrium statistical mechanics is applicable and that the system has the macroscopic properties of a conductor, it is shown that the suitably smoothed charge correlation function is universal, and that the free energy and the grand potential have universal dependences onW (universal means independent of the microscopic detail). The casesd=2 are discussed in detail, and the generic results are checked on an exactly solvable model. The cased=3 of a plane parallel to an ideal conductor is also explicitly worked out.Laboratoire associé au Centre National de la Recherche Scientifique-URA D0063.     

The complete grapht-packings andt-coverings

The aim of this paper is to introduce the notions of floor and ceiling functions related to graph edge-decompositions intot mutually isomorphic parts. It is shown that, given any natural numbert, uniform and extremal t-packing andt-covering exist for each complete graph and each complete bipartite graph. Extremal in this context means that both a remainder and a surplus are absolutely minimum. In proofs, decompositions of multigraphs into matchings are involved. Open problems and conjectures are stated.     

Geometric quantization of topological gauge theories

We show that Abelian gauge theories in 2+1 space-time dimensions with the introduction of a topological Chern-Simons term can be quantized with the use of the symplectic formalism. The consistency of our results are verified by the agreement with the ones from the Dirac case.     

Optimal algebraic multilevel preconditioning for local refinement along a line

The application of some recently proposed algebraic multilevel methods for the solution of two-dimensional finite element problems on nonuniform meshes is studied. The locally refined meshes are created by the newest vertex mesh refinement method. After the introduction of this refinement technique it is shown that, by combining levels of refinement, a preconditioner of optimal order can be constructed for the case of local refinement along a line. Its relative condition number is accurately estimated. Numerical tests demonstrating the performance of the proposed preconditioners will be reported in a forthcoming paper.