首页 | 本学科首页   官方微博 | 高级检索  
文章检索
  按 检索   检索词:      
出版年份:   被引次数:   他引次数: 提示:输入*表示无穷大
  收费全文   340655篇
  免费   4376篇
  国内免费   1365篇
化学   180766篇
晶体学   4693篇
力学   14296篇
综合类   19篇
数学   45019篇
物理学   101603篇
  2020年   2018篇
  2019年   2018篇
  2018年   3113篇
  2017年   3265篇
  2016年   4542篇
  2015年   3760篇
  2014年   4888篇
  2013年   14586篇
  2012年   13486篇
  2011年   15438篇
  2010年   9717篇
  2009年   9536篇
  2008年   12876篇
  2007年   13155篇
  2006年   12796篇
  2005年   15261篇
  2004年   13696篇
  2003年   10994篇
  2002年   9205篇
  2001年   10371篇
  2000年   7837篇
  1999年   6291篇
  1998年   5031篇
  1997年   4877篇
  1996年   4867篇
  1995年   4452篇
  1994年   4210篇
  1993年   3997篇
  1992年   4584篇
  1991年   4424篇
  1990年   4132篇
  1989年   3933篇
  1988年   4202篇
  1987年   3838篇
  1986年   3726篇
  1985年   5364篇
  1984年   5445篇
  1983年   4402篇
  1982年   4792篇
  1981年   4820篇
  1980年   4576篇
  1979年   4711篇
  1978年   4694篇
  1977年   4674篇
  1976年   4679篇
  1975年   4551篇
  1974年   4401篇
  1973年   4568篇
  1972年   2613篇
  1971年   1915篇
排序方式: 共有10000条查询结果,搜索用时 78 毫秒
971.
Parameters of Gaussian multivariate models are often estimated using the maximum likelihood approach. In spite of its merits, this methodology is not practical when the sample size is very large, as, for example, in the case of massive georeferenced data sets. In this paper, we study the asymptotic properties of the estimators that minimize three alternatives to the likelihood function, designed to increase the computational efficiency. This is achieved by applying the information sandwich technique to expansions of the pseudo-likelihood functions as quadratic forms of independent normal random variables. Theoretical calculations are given for a first-order autoregressive time series and then extended to a two-dimensional autoregressive process on a lattice. We compare the efficiency of the three estimators to that of the maximum likelihood estimator as well as among themselves, using numerical calculations of the theoretical results and simulations.  相似文献   
972.
In this paper, by using elementary analysis, we establish some new Lyapunov-type inequalities for nonlinear systems of differential equations, special cases of which contain the well-known equations such as Emden-Fowler-type and half-linear equations. The inequalities obtained here can be used as handy tools in the study of qualitative behaviour of solutions of the associated equations.  相似文献   
973.
We briefly review the five possible real polynomial solutions of hypergeometric differential equations. Three of them are the well known classical orthogonal polynomials, but the other two are different with respect to their orthogonality properties. We then focus on the family of polynomials which exhibits a finite orthogonality. This family, to be referred to as the Romanovski polynomials, is required in exact solutions of several physics problems ranging from quantum mechanics and quark physics to random matrix theory. It appears timely to draw attention to it by the present study. Our survey also includes several new observations on the orthogonality properties of the Romanovski polynomials and new developments from their Rodrigues formula.  相似文献   
974.
975.
976.
Partially supported by NSF Grant DMS-9004123 and ARO through MSI Cornell (DAAG 29-85-C-0018)  相似文献   
977.
An instrument is described that can be used to monitor, with unprecedented sensitivity, changes in the optical reflectivity due to crystailine damage incurred during ion implantation. It is shown that at the shot-noise limit, changes in the optical reflectivity of silicon as small as 5·10–7 can be measured in a 10 Hz bandwidth with a signal-to-noise ratio of 100, corresponding to an extrapolated uniform implantation dose of 5·108 cm–2 for 11B+ at 50 keV in silicon.  相似文献   
978.
Quantum wire (QWR) heterostructures suitable for optoelectronic applications should meet a number of requirements, including defect free interfaces, large subband separation, long carrier lifetime, efficient carrier capture. The structural and opticl properties of GaAs/AlGaAs and InGaAs/GaAs quantum wire (QWR) heterostructures grown by organometallic chemical vapor deposition on nonplanr substrates, which satisfy many of these criteria, are described. These crescent-shaped QWRs are formed in situ during epitaxial growth resulting in virtually defect free interfaces. Effective wire widths as small as 10nm have been achieved, corresponding to electron subband separations greater than KBT at room temperature. The enhanced density of states at the QWR subbands manifests itself in higher optical absorption and emission as visualized in photoluminescence (PL), PL excitation, amplified spontaneous emission and lasing spectra of these structures. Effective carrier capture into the wires via connected quantum well regions, which is important for enhancing the otherwise extremely small capture cross section of these wires, has also been observed. Room temperature operation of GaAs/AlGaAs and strained InGaAs/GaAs QWR lasers with threshold currents as low as 0.6mA has been demonstrated.  相似文献   
979.
Zboril  R.  Mashlan  M.  Machala  L.  Walla  J.  Barcova  K.  Martinec  P. 《Hyperfine Interactions》2004,156(1-4):403-410
Hyperfine Interactions - The natural garnets from almandine (Fe3Al2Si3O12)–pyrope (Mg3Al2Si3O12) series with the iron to magnesium atomic ratio ranging from 0.2 to 1 were characterised and...  相似文献   
980.
Undoped AlGaN/GaN heterostructures with different content and thickness of AlGaN layer are investigated by photoreflectance (PR) spectroscopy. We have observed PR resonances related to an absorption in both GaN and AlGaN layers. The character of these resonances has been analyzed, and PR lines associated with excitonic and band-to-band absorption in the GaN layer and band-to-band absorption in the AlGaN layer have been identified. The transition related to band-to-band absorption possesses characteristic Franz–Keldysh oscillations (FKOs) associated with a built-in electric field. The electric field in the AlGaN layer obtained on the basis of the analysis of FKOs has been found to be in the range of 244–341 kV/cm. The value of the field has been found to decrease with the increase in AlGaN thickness and to increase with the increase in Al concentration. The surface potential for AlGaN layers has been found to increase with the increase in Al mole fraction and has been estimated to be in the range of 1.0–1.7 eV.  相似文献   
设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号