Photoluminescence of self-assembled GeSi/Si(001) nanoislands of different shapes

The dependence of the photoluminescence spectra of structures with self-assembled GeSi/Si(001) islands on Ge deposition temperature was studied. The position of the island photoluminescence peak maximum was found to shift nonmonotonically with decreasing Ge deposition temperature. The blue shift of the island photoluminescence peak with the growth temperature decreasing from 600 to 550°C is assigned to the change in the island shape occurring in this temperature interval accompanied by a strong decrease in the average island height.     

Some exact solutions of the Dirac equation in the Kasner space-time

The exact solutions of the covariant generalization of the Dirac equation are obtained in the Kasner space-time for two types of coordinates, cartesian coordinates and cylindrical ones. The tetrads for both cases are constructed on the basis of a global quasicartesian coordinate systems that allows one to get rid of coordinate effects connected with the rotation of the local frame under transition of the triad from one space-time point to another. The possibility of plane and cylindrical spinor waves in the Kasner space-time is proved.     

On Integrability of the Camassa–Holm Equation and Its Invariants

Using geometrical approach exposed in (Kersten et al. in J. Geom. Phys. 50:273–302, [2004] and Acta Appl. Math. 90:143–178, [2005]), we explore the Camassa–Holm equation (both in its initial scalar form, and in the form of 2×2-system). We describe Hamiltonian and symplectic structures, recursion operators and infinite series of symmetries and conservation laws (local and nonlocal). This work was supported in part by the NWO–RFBR grant 047.017.015 and RFBR–Consortium E.I.N.S.T.E.I.N. grant 06-01-92060.     

Condensed state physics elastic constants of alkali metal alloys

The second-and third-order Brøgger elastic constants of the disordered Cs-K, Cs-Rb, and Rb-K alloys with different concentrations of the second component are calculated for the pseudopotential model with the use of the Krasko-Gurskii model potential. Results of calculations are in good qualitative agreement with the available experimental data on the elastic constants of alloys.     

Negative photoconductivity of selectively doped SiGe/Si: B heterostructures with a two-dimensional hole gas in the middle-infrared range

The spectra of lateral photoconductivity in selectively doped SiGe/Si: B heterostructures with a two-dimensional hole gas are analyzed. It is revealed that the lateral photoconductivity spectra of these heterostructures exhibit two signals opposite in sign. The positive signal of the photoconductivity is associated with the impurity photoconductivity in silicon layers of the heterostructures. The negative signal of the photoconductivity is assigned to the transitions of holes from the SiGe quantum well to long-lived states in silicon barriers. The position of the negative photoconductivity signal depends on the composition of the quantum well, and the energy of the low-frequency edge of this signal is in close agreement with the calculated band offset between the quantum-confinement level of holes in the quantum well and the valence band edge in the barrier.     

Raman spectroscopy and electroreflectance studies of self-assembled SiGe nanoislands grown at various temperatures

SiGe nanoislands grown in a silicon matrix at temperatures of 300 to 600°C are studied using Raman spectroscopy and electroreflectance. For islands grown at relatively low temperatures (300–500°C), phonon bands are observed to have a doublet structure. It is shown that changes in the percentage composition, size, and shape of nanoislands and, hence, in the elastic stresses (depending on the growth temperature of the structures) have a significant effect on the energies of optical electronic interband transitions in the islands. As a consequence, the resonance conditions for Raman scattering also change. It is found that interdiffusion from the silicon substrate and the cover layer (determining the mixed composition of SiGe islands) is of importance even at low growth temperatures of nanostructures (300–400°C).     

Ethylene glycol-modified cobalt and iron oxalates as precursors for the synthesis of oxides as extended microsized and nanosized objects

The reactions of ethylene glycol with iron and cobalt oxalates upon heating in air are reported. Heat treatment of mixtures of oxalate powders with ethylene glycol yields new compounds (solvates) via the replacement of the water molecules in the oxalate structure by ethylene glycol molecules: MC₂O₄ · 2H₂O + HOCH₂CH₂OH = MC₂O₄(HOCH₂CH₂OH)+2H₂O↑. The crystals resulting from this reaction are elongated, and their shape is inherited by their thermolysis products. Thermolysis in air yields microwhiskers and nanowhiskers of Fe₂O₃ and Co₃O₄, and thermolysis in an inert atmosphere affords Fe₃O₄ and Co whiskers. The thermolysis of FeC₂O₄(HOCH₂CH₂OH) in helium yields a new structural modification of FeC₂O₄ as an intermediate product. The resulting compounds and their thermolysis products were characterized by X-ray powder diffraction, microscopy, IR spectroscopy, and thermogravimetric and chemical analyses. The particle shape and size were determined by scanning electron microscopy.     

Synthesis, structure, and properties of M[VO2(XO4)(H2O)2] · H2O (X = S, M = K, Rb, NH4, Tl; X = Se, M = K, Rb, NH4)

Keeping of MVO(XO₄)₂ under saturated vapor pressure at room temperature resulted in the synthesis of a number of isostructural complexes M[VO₂(XO₄)(H₂O)₂] · H₂O, where X = S, M = K, Rb, NH₄, Tl and X = Se, M = K, Rb, NH₄. The conclusion about the isostructural nature of the synthesized sulfate and selenate compounds was based on X-ray diffraction and vibrational spectroscopy data. Characteristic features of the thermal decomposition of M[VO₂(XO₄)(H₂O)₂] · H₂O on heating in air were identified. It was shown that K[VO₂(SeO₄)(H₂O)₂] · H₂O tends to undergo spontaneous dehydration under ambient conditions to give the monohydrate K[VO₂(SeO₄)(H₂O)].     

A Unified Approach to Computation of Integrable Structures

We expose a unified computational approach to integrable structures (including recursion, Hamiltonian, and symplectic operators) based on geometrical theory of partial differential equations.     

Optical detection of an electric field in a GaAs/AlGaAs <Emphasis Type=Italic>n</Emphasis>-<Emphasis Type=Italic>i</Emphasis>-<Emphasis Type=Italic>n</Emphasis> heterostructure with double quantum wells

Processes occurring when a static transverse electric field is applied to a GaAs/AlGaAs n-i-n heterostructure with single quantum wells and asymmetric tunnel-coupled double quantum wells have been investigated by optical methods. The difference between the energies of exciton transitions for quantum wells of different widths makes it possible to attribute the observed photoluminescence peaks to particular pairs of wells or particular single quantum wells. The local electric field for each quantum well has been determined in terms of the Stark shift and splitting of exciton lines in a wide range of external voltage. A qualitative model has been proposed to explain the nonmonotonic distribution of the electric field over the depth of the heterostructure.