Effects of substrate treatment on the electroluminescence performance of flexible OLEDs

Electroluminescence (EL) performance of flexible organic light-emitting device (FOLED) has been found to be highly dependent upon the morphology of the surface of the indium thin oxide (ITO)/plastic substrate as well as the patterning and processing conditions of the substrate. We will present evidence showing that luminance efficiency of FOLED can be greatly improved by pretreatment. Surface analysis of the ITO/PET by means of atomic force microscope (AFM) and optical microscope will be compared with that of the ITO/glass and the influence of flexible OLEDs substrate treatment by various methods on EL performance will also be discussed.     

Molecular dynamics simulation study of the nano-wear characteristics of alkanethiol self-assembled monolayers

A molecular dynamics (MD) simulation study of the probe-based nano-lithography of an alkanethiol self-assembled monolayer (SAM) on a metal surface was performed. The motivation of this work was to understand the nano-tribological phenomena of the nano-metric scribing process of alkanethiol molecules and gain insight into the interaction between the probe tip and the SAM-coated surface during the scribing process. The simulation results revealed that the organothiol molecules were displaced and dragged by the probe tip during scribing due to the strong interchain interactions. It was also found that the scribed pattern width was largely dependent on the tip–surface interaction induced by the probe shape rather than the tip–surface contact size. Also, the minimum load for tip–substrate contact changed with the number of molecules that interact with the probe tip. Furthermore, from the investigation of the effect of the scribing speed on the surface-damage characteristics of the chain molecules, it was found that relatively high-speed scribing could induce excessive removal of the SAM molecules from the surface. PACS 02.70.Ns; 31.15.Qg; 81.16.Nd; 68.35.Af     

Mobility of electrons and holes in an n-type organic semiconductor perylene diimide thin film

N,N′-diphenylbutyl-3,4,9,10-perylenebiscarboximide (PTCDI-C4Ph) were characterized by optical and electrochemical methods. A device with an ITO/PTCDI-C4Ph (≈2 μm)/Al structure was fabricated to measure mobility by time-of-flight techniques. This vacuum deposited organic layer was an amorphous state. Electrons were observed faster than holes. The electron and hole mobilities were 1.8 × 10⁻⁴ cm²/V s and 1.1 × 10⁻⁴ cm²/V s under the electric field of 500 (V/cm)^1/2, respectively. This result shows that this organic compound is a good candidate for an n-type conduction.     

Enhancement of long-term stability of pentacene thin-film transistors encapsulated with transparent SnO2

The long-term stability of pentacene thin-film transistors (TFTs) encapsulated with a transparent SnO₂ thin-film prepared by ion beam-assisted deposition (IBAD) was investigated. After encapsulation process, our organic thin-film transistors (OTFTs) showed somewhat degraded field-effect mobility of 0.5 cm²/(V s) that was initially 0.62 cm²/(V s), when a buffer layer of thermally evaporated 100 nm SnO₂ film had been deposited prior to IBAD process. However, the mobility was surprisingly sustained up to 1 month and then gradually degraded down to 0.35 cm²/(V s) which was still three times higher than that of the OTFT without any encapsulation layer after 100 days in air ambient. The encapsulated OTFTs also exhibited superior on/off current ratio of over 10⁵ to that of the unprotected devices (∼10⁴) which was reduced from ∼10⁶ before aging. Therefore, the enhanced long-term stability of our encapsulated OTFTs should be attributed to well protection of permeation of H₂O and O₂ into the devices by the IBAD SnO₂ thin-film which could be used as an effective inorganic gas barrier for transparent organic electronic devices.     

Photoemission study of CaF2 on Si(001)-2×1 during annealing

We have employed synchrotron radiation photoemission to investigate calcium fluoride deposited on Si(001)-2×1 annealed at 700 °C. The valence band spectra reveal that the initial molecules are dissociated to single Ca atoms resting on the surface. Si 2p core-level spectra manifest a negatively shifted Ca-induced line at 0.35 eV. The dissociated Ca atoms occupy only half of the surface, on top of which the CaF₂ molecules commence growth. This is in contrast to the Si(111)-7×7 counterpart, which exhibits a CaF layer in the interface. Strong elastic scattering due to the absorbed Ca atoms is evident in the photoemission spectra, thus averaging out the angle-dependent features.     

Transport and percolation in a low-density high-mobility two-dimensional hole system

We present a study of the temperature and density dependence of the resistivity of an extremely high quality two-dimensional hole system grown on the (100) surface of GaAs. For high densities in the metallic regime (p > or approximately4x10;{9} cm;{-2}), the nonmonotonic temperature dependence ( approximately 50-300 mK) of the resistivity is consistent with temperature dependent screening of residual impurities. At a fixed temperature of T=50 mK, the conductivity versus density data indicate an inhomogeneity driven percolation-type transition to an insulating state at a critical density of 3.8x10;{9} cm;{-2}.     

Carrier transport in two-dimensional graphene layers

Carrier transport in gated 2D graphene monolayers is considered in the presence of scattering by random charged impurity centers with density n(i). Excellent quantitative agreement is obtained (for carrier density n>10(12) cm(-2)) with existing experimental data. The conductivity scales linearly with n/n(i) in the theory. We explain the experimentally observed asymmetry between electron and hole conductivities, and the high-density saturation of conductivity for the highest mobility samples. We argue that the experimentally observed saturation of conductivity at low density arises from the charged impurity induced inhomogeneity in the graphene carrier density which becomes severe for n less, similarn(i) approximately 10(12) cm(-2).     

Performance limits of pico-cell systems using radio-over-fiber techniques with an electroabsorption modulator

We investigate the performance limits of a pico-cell system using the radio- over-fiber technique with an electroabsorption modulator (EAM) in a 2.4 GHz wireless local area network (WLAN) environment. To understand the performance limits of the system using an EAM as the optical transceiver, we vary the optical modulation index (OMI) of the transmitter for different bias voltages to the EAM. Power margins in the links are found to estimate a possible service range, and packet loss rates (PLRs) in the pico-cell system are measured to evaluate the transmission performance. The total service range can be extended up to 3 m by adjusting the OMI of the transmitter for different applied bias voltages to the EAM.     

N2O and O3 arctic column amounts from PARIS-IR observations: Retrievals, characterization and error analysis

Ground-based solar absorption infrared spectra were recorded in the Canadian Arctic during the early spring of 2004 using a moderate-resolution Fourier transform spectrometer, the Portable Atmospheric Research Interferometric Spectrometer for the Infrared (PARIS-IR). As part of the Canadian Arctic Atmospheric Chemistry Experiment (ACE) validation campaign, the PARIS-IR instrument recorded solar absorption spectra of the atmosphere from February to March 2004 as the Sun returned to the Arctic Stratospheric Ozone Observatory (AStrO) near Eureka, Nunavut, Canada (80.05°N, 86.42°W). In this paper, we briefly outline the PARIS-IR instrument configuration and data acquisition in the high Arctic. We discuss the retrieval methodology, characterization and error analysis associated with total and partial column retrievals. We compare the PARIS-IR measurements of N₂O and O₃ column amounts with those from the Fourier transform spectrometer (ACE-FTS) onboard the Canadian SCISAT-1 satellite and the ozonesonde data obtained at Eureka during the validation campaign.     

Formation of p-type ZnO film on InP substrate by phosphor doping

ZnO thin film was initially deposited on InP substrate by radio frequency (rf) magnetron sputtering and the diffusion process was performed using the closed ampoule technique where Zn₃P₂ was used as the dopant source. To verify the junction formation of ZnO thin films, the electrical properties were measured, and the effects of Zn₃P₂ diffusion on ZnO thin films were investigated. It is observed that the electrical property of the film is changed from n-type to p-type by dopant diffusion effect. Based on the results, it is confirmed that ZnO thin films can be a potential candidate for ultraviolet (UV) optical devices.