Complex dynamics of a particle in an oscillating potential field

In this paper, Mg-doped ZnO nanoparticles were synthesized by the facile sol–gel method. The crystalline structure, characteristic absorption bands and morphology of the obtained Mg-doped ZnO nanoparticles were studied by XRD, FTIR and TEM. The thermal degradation behaviour of the samples was investigated by differential scanning calorimetry (DSC) and thermogravimetry (TG). The effect of Mg concentrations and annealing temperatures on the antibacterial properties of the obtained nanoparticles was investigated in detail. The results indicated that doping Mg ions into ZnO lattice could enhance its antibacterial activity. Antibacterial assay demonstrated that Mg-doped ZnO with 7% Mg content annealed at 400 ^°C had the strongest antibacterial activity against Listeria monocytogenes (98.7%). This study indicated that the inhibition rate of ZnO nanoparticles increased with the formation of granular structure and the decrease of ZnO size due to the doping of Mg ions into the ZnO lattice.     

Nanoflare heating model for collisionless solar corona

The problem of coronal heating remains one of the greatest unresolved problems in space science. Magnetic reconnection plays a significant role in heating the solar corona. When two oppositely directed magnetic fields come closer to form a current sheet, the current density of the plasma increases due to which magnetic reconnection and conversion of magnetic energy into thermal energy takes place. The present paper deals with a model for reconnection occurring in the solar corona under steady state in collisionless regime. The model predicts that reconnection time in the solar corona varies inversely with the cube of magnetic field and varies directly with the Lindquist number. Our analysis shows that reconnections are occurring within a time interval of 600 s in the solar corona, producing nanoflares in the energy range 10 ²¹–10 ²³ erg /s which matches with Yohkoh X-ray observations.     

Exploring a hidden fermionic dark sector

In this paper, we present a generalized unified method for finding multiwave solutions of the time-fractional (2+1)-dimensional Nizhnik–Novikov–Veselov equations. The fractional derivatives are described in the modified Riemann–Liouville sense. The fractional complex transform has been suggested to convert fractional-order differential equations with modified Riemann–Liouville derivatives into integer-order differential equations, and the reduced equations can be solved by symbolic computation. Multiauxiliary equations have been introduced in this method to obtain not only multisoliton solutions but also multiperiodic or multielliptic solutions. It is shown that the considered method is very effective and convenient for solving wide classes of nonlinear partial differential equations of fractional order.     

Time-delayed chameleon: Analysis,synchronization and FPGA implementation

In this paper we report a time-delayed chameleon-like chaotic system which can belong to different families of chaotic attractors depending on the choices of parameters. Such a characteristic of self-excited and hidden chaotic flows in a simple 3D system with time delay has not been reported earlier. Dynamic analysis of the proposed time-delayed systems are analysed in time-delay space and parameter space. A novel adaptive modified functional projective lag synchronization algorithm is derived for synchronizing identical time-delayed chameleon systems with uncertain parameters. The proposed time-delayed systems and the synchronization algorithm with controllers and parameter estimates are then implemented in FPGA using hardware–software co-simulation and the results are presented.     

具有部分本征GaN帽层新型AlGaN/GaN高电子迁移率晶体管特性分析

为了优化传统Al GaN/GaN高电子迁移率晶体管(high electron mobility transistors,HEMTs)器件的表面电场,提高击穿电压,本文提出了一种具有部分本征GaN帽层的新型Al GaN/GaN HEMTs器件结构.新型结构通过在Al GaN势垒层顶部、栅电极到漏电极的漂移区之间引入部分本征GaN帽层,由于本征GaN帽层和Al GaN势垒层界面处的极化效应,降低了沟道二维电子气(two dimensional electron gas,2DEG)的浓度,形成了栅边缘低浓度2DEG区域,使得沟道2DEG浓度分区,由均匀分布变为阶梯分布.通过调制沟道2DEG的浓度分布,从而调制了Al GaN/GaN HEMTs器件的表面电场.利用电场调制效应,产生了新的电场峰,且有效降低了栅边缘的高峰电场,Al GaN/GaN HEMTs器件的表面电场分布更加均匀.利用ISE-TCAD软件仿真分析得出:通过设计一定厚度和长度的本征GaN帽层,Al GaN/GaN HEMTs器件的击穿电压从传统结构的427 V提高到新型结构的960 V.由于沟道2DEG浓度减小,沟道电阻增加,使得新型Al GaN/GaN HEMTs器件的最大输出电流减小了9.2%,截止频率几乎保持不变,而最大振荡频率提高了12%.     

三角形谱啁啾光纤光栅的制备及其在光纤无线单边带调制系统中的应用

本文涉及一种三角形谱啁啾光纤光栅的制备以及其在光纤无线(radio over fiber,RoF)单边带调制系统中的应用.基于相位掩模法和变速度折射率调制,实验制备了底部变化范围1.9 nm、透射深度0—15 dB的三角形谱啁啾光纤Bragg光栅,利用其透射谱具有较大负向斜边,研究了其在RoF系统中的应用.方案仅使用一个三角形谱光纤光栅,实现了以下两种功能: 1)双边带调制信号到单边带调制信号转换; 2)降低信号的载波边带比(carrier-to-sideband ratio,CSR),提高接收灵敏度.并 关键词： 光纤通信 微波光子 光纤布拉格光栅 单边带调制     

Extended Holomorphic Anomaly in Gauge Theory

The partition function of an N=2{\mathcal {N}=2} gauge theory in the Ω-background satisfies, for generic value of the parameter b = -e₁/e₂{\beta=-{\epsilon_1}/{\epsilon_2}} , the, in general extended, but otherwise β-independent, holomorphic anomaly equation of special geometry. Modularity together with the (β-dependent) gap structure at the various singular loci in the moduli space completely fixes the holomorphic ambiguity, also when the extension is non-trivial. In some cases, the theory at the orbifold radius, corresponding to β = 2, can be identified with an “orientifold” of the theory at β = 1. The various connections give hints for embedding the structure into the topological string.     

A1/Ti/4H-SiC Schottky barrier diodes with inhomogeneous barrier heights

This paper investigates the current-voltage （I-V） characteristics of Al/Ti/4H-SiC Schottky barrier diodes （SBDs） in the temperature range of 77 K-500 K, which shows that Al/Ti/4H SiC SBDs have good rectifying behaviour. An abnormal behaviour, in which the zero bias barrier height decreases while the ideality factor increases with decreasing temperature （T）, has been successfully interpreted by using thermionic emission theory with Gaussian distribution of the barrier heights due to the inhomogeneous barrier height at the A1/Ti/4H-SiC interface. The effective Richardson constant A＊ = 154 A/cm2 . K2 is determined by means of a modified Richardson plot In（I0/T2） - （qσ）2/2（κT）2 versus q/kT, which is very close to the theoretical value 146 A/cm2 · K2.     

(μ-L1)(μ-L2)十羰基合三锇电子光谱的含时从头计算

用从头计算(ab initio)方法,在HF/CEP-4G水平上,全优化计算了Os₃(CO)₁₀(μ-L1)(μ-L2) [L1,L2=H,Cl,Br,I]簇合物的的分子几何构型,在此基础上对这些簇合物的前线轨道进行了讨论,发现对于M—M键,p轨道虽有贡献,但以s,d轨道的贡献为主,同时从Cl→I,随着桥配体原子序的增大,Os₃(CO)₁₀(μ-L)₂类簇合物的HOMO与NHOMO轨道能量依次升高,而Os₃(CO)₁₀(μ-H)(μ-L)类簇合物只有HOMO轨道能量依次升高,而Os₃(CO)₁₀(μ-L)₂类簇合物的LUMO与HOMO的能量差Δε_L-H及LUMO与NHOMO的能量差Δε_L-NH都依次变小,可以预示,簇合物的电子光谱基谱带将红移。用TDHF计算了这些簇合物的电子吸收光谱。计算结构表明,簇合物Os₃(CO)₁₀(μ-H)₂(I)的跃迁主要为π→σ*和σ→σ*,对于其他几个簇合物Os₃(CO)₁₀(μ-H)(μ-L) [L=Cl,Br,I] 和Os₃(CO)10(μ-L)₂[L=Cl,Br],电子吸收峰主要都发生在σ→σ*的跃迁。从Cl→I,随着桥配体原子序的增大,簇合物的电子光谱基谱带红移,且光谱线强度逐渐减弱。     

基于线性耦合下混沌系统的同步条件

将混沌同步问题用精确的数学语言给予描述，通过数学分析将其转化为微分方程组的稳定性问题.以Lorenz系统族的Chen氏系统作为典型系统，在线性耦合下分析系统参数，得到了系统达到同步时的充分条件，且在理论上加以证明.结合该条件，提出了一种确定耦合系数的方法.最后用仿真实验验证了该方法的正确性，并验证了在不同耦合方式和参考系统的情况下定理的有效性. 关键词： 混沌同步 耦合 稳定性