N[a,b]类中边界Nevanlinna-Pick插值(I)

用所谓的Hankel向量方法求解N[a,b]函数类中带边界插值数据的Nevanlina-Pick插值(BNP(N[a,b]))问题,并建立BNP(N[a,b])问题与[a,b]上的某种带约束条件的Hausdorff矩量问题之间等价的可解条件以及解之间明确的一一对应关系.这使得当BNP(N[a,b])问题有多解时,能通过带约束条件的矩量问题的可解性准则和解获得BNP(N[a,b])问题的可解性准则和解的参数化描述,而在唯一解的情况下,通过BNP(N[a,b])问题解的存在唯一性准则和唯一解来获得带约束条件的     

-混合序列的不变原理

给出一类较广泛的ρ-混合序列 ,并证明了在一定的矩条件下 ,ρ-混合序列的不变原理成立     

北京同步辐射装置3B1B生物光谱实验站

本文介绍北京同步辐射装置（ＢＳＲＦ）３Ｂ１Ｂ光束线、生物光谱实验站和圆二色谱仪的基本情况。报道北京正负电子对撞机（ＢＥＰＣ）同步辐射专用光期间，我们在站测量了１１种手征性生物和药物样品的圆二色（ＣＤ）谱，首次在国内利用同步辐射光获取了Ｄ－苯丙氨酸等样品的ＣＤ谱和Ｄ－及Ｌ－亮氨酸对称的ＣＤ曲线。     

生灭过程爆发后的存活时间分布

对于有爆发的寿命为σ的生灭过程X =X(t) ,t<σ ,研究它爆发后还能活多久 .求出了过程爆发后至寿终的存活时间的分布、平均存活时间和爆发就寿终的概率.     

SOME INTEGRAL INEQUALITIES IN N INDEPENDENT VARIABLES

ＳＯＭＥＩＮＴＥＧＲＡＬＩＮＥＱＵＡＬＩＴＩＥＳＩＮＮＩＮＤＥＰＥＮＤＥＮＴＶＡＲＩＡＢＬＥＳＹＡＮＧＥＮＨＡＯ（杨恩浩）（ＤｅｐａｒｔｍｅｎｔｏｆＭａｔｈｅｍａｔｔｃｓ，ＪｉｎａｎＵｎｉｖｅｒｓｉｔｙ，Ｇｎａｎｇｚｈｏｕ５１Ｏ６３２，Ｃｈｉｎａ）Ａ...     

光致折射效应中空间电荷场建立过程的研究

本文推导了包含自衍射及非线性吸收影响、用以描述空间电荷场建立过程的微分方程组,阐明了周期性的空间电荷场与光强干涉条纹之间的相位差在建立过程中所起的作用,并推导了描述条纹倾斜和弯曲的微分方程。通过数值计算找到了硅酸铋(BSO)晶体中能量转移的规律,讨论了材料特性对过程快慢的影响,提出了用CW激光来探讨瞬态过程快慢的可能性。     

Effects of Post-Thermal Treatment on Quality of SiC Grown by PVT Method

We report the effects of post-thermal treatment on the quality of 2-inch 6H-SiC wafer cut from a crystal boule grown by physical vapour transportation method. The full widths at half maximum of x-ray diffraction rocking curves measured on sites across the 2-inch wafer become narrower, indicating the quality improvement after a three-step post-thermal treatment. It is found that the most common defects such as micropipes and inclusions can be significantly reduced after the treatment. Our results show that the post-thermal treatment is an effective route to improve the quality of SiC single crystals.     

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As the ITER first wall Be/CuCrZr hot isostatic pressing (HIP) bonding intermediate transition layer, Ti/Cu layer can form a multi-layer intermediate metal phase, and defects such as cracks occur between the Ti/Cu metal phases. CuCrZr was used instead of Be, and a number of CuCrZr/Ti/Cu/CuCrZr joints were fabricated by the same HIP process as Be/CuCrZr to analyze the Ti/Cu joints. The effects of stress relief annealing on joint strength and defect distribution of the joints unannealed, annealed at 400°C and 500°C respectively were studied. The results show that three layers of Ti/Cu diffusion layers are formed on both sides of the intermediate titanium layer, namely Cu₄Ti, CuTi and CuTi₂. The thickness of Cu₄Ti on the pure copper side is thicker than that on the CuCrZr side, so that the crack is almost entirely distributed at the junction of Cu₄Ti and CuTi on the pure copper side where brittle fracture is easy to occur in the tensile samples. As the annealing temperature increases, the generation and propagation of cracks decreases.     

KNbO3：Fe晶体的时间微分效应及图像追踪

本文观察到了KNbO_3:Fe晶体的时间微分效应,并用这个微分效应进行了图像追踪的演示,为KNbO_3:Fe晶体在光折变器件领域的应用进行了有益的探索。