碘分子吸收光谱研究

我们用HRD-1型双光栅单色仪记录了碘分子在可见光区域的吸收光谱。确定了大量的带头,由此得出了碘分子的离解限、离解能、力常数和振动基频。实验结果与理论结果很符合。     

荧光素单磷酸酯的合成和其应用于荧光光度法测定酸性磷酸酯酶

本文新合成了荧光素单磷酸酯,通过元素分析、红外、热谱确定了其结构,探讨了其生成机理,并将其应用到酸性磷酸酯的荧光分析,深入研究了它与酸性磷酸酯酶之间反应的条件、检测此酶的线性范围、检测限和米氏常效.     

Observation of two resonant structures in e+ e- -->pi+ pi- psi(2S) via initial-state radiation at Belle

The cross section for e+ e- --> pi+ pi- psi(2S) between threshold and sqrt[s]=5.5 GeV is measured using 673 fb(-1) of data on and off the Upsilon(4S) resonance collected with the Belle detector at KEKB. Two resonant structures are observed in the pi+ pi- psi(2S) invariant-mass distribution, one at 4361 +/- 9 +/- 9 MeV/c2 with a width of 74 +/- 15 +/- 10 MeV/c2, and another at 4664 +/- 11 +/- 5 MeV/c2 with a width of 48 +/- 15 +/- 3 MeV/c2, if the mass spectrum is parametrized with the coherent sum of two Breit-Wigner functions. These values do not match those of any of the known charmonium states.     

Organic Light Emitting Diodes with an Organic Acceptor/Donor Interface Involved in Hole Injection

Organic light emitting diodes with an interface of organic acceptor 3-, 4-, 9-,10-perylenetetracarboxylic dianhydride （PTCDA） and donor copper phthalocyanine （CuPc） involved in hole injection are fabricated. As compared to the conventional device using a 5 nm CuPc hole injection layer, the device using an interface of 10nm PTCDA and 5 nm CuPc layers shows much lower operating voltage with an increase of about 46% in the maximum power efficiency. The enhanced device performance is attributed to the efficient hole generation at the PTCDA/CuPc interface. This study provides a new way of designing hole injection.     

Time-resolved measurement of atomic emission enhancement by fs--ns dual-pulsed laser-induced breakdown spectroscopy

Time-resolved measurement of atomic emission enhancement is performed by using a 500-fs KrF laser pulse incident upon a high density supersonic O_{2} gas jet, synchronized with an orthogonal ns frequency-doubled Nd:YAG laser pulse. The ultra-short pulse serves as an igniter of the gas jet, and the subsequent ns-laser pulse significantly enhances the atomic emission. Analysis shows that the contributions to the enhancement effect are made mainly by the bremsstrahlung radiation and cascade ionization.     

相变域硅薄膜材料的光稳定性

采用RF-PECVD技术，通过改变反应气体的硅烷浓度制备了一系列不同晶化率不掺杂的硅薄膜材料，研究了工艺变化对材料结构的影响及材料光电特性同微结构的关系.随后进行了光衰退试验，在分析光照前后光电特性变化规律的基础上，认为材料中的非晶成分是导致材料光电特性衰退的主要原因.在靠近过渡区非晶一侧的硅材料比普通非晶硅稳定，衰退率较少；高晶化率微晶硅材料性能稳定，基本不存在光衰退；在靠近过渡区微晶一侧的硅材料虽然不是完全不衰退，但相比高晶化率硅材料来说更适合制备高效微晶硅电池. 关键词： 射频等离子体增强化学气相沉积 硅薄膜 Staebler-Wronski(SW)效应 稳定性     

短路过渡电弧焊电流信号的近似熵分析

依据近似熵的理论和算法，从非线性角度对纯CO₂保护气体条件下短路过渡电弧焊的电流信号进行了近似熵分析.通过对不同的送丝速度、给定电压及气体流量下电流信号的近似熵计算和比较，表明近似熵可以作为短路过渡稳定性的评判标准.近似熵越大，波动越小，焊接过程就越稳定. 关键词： 非线性 近似熵 短路过渡 稳定性     

(1,2-μ2-L1)(1,2-μ2-L2)十羰基合三锇振动光谱的理论计算[L1, L2=H, Cl, Br, I]

用密度泛函理论和从头计算(abinitio)方法,在B3LYP CEP 4G ,B3LYP LanL2DZ和RHF CEP 4G ,RHF LanL2DZ水平上,全优化计算了(1,2 μ2 H) (1,2 μ2 L)Os3(CO) 1 0 (L :Cl,Br,I)的分子几何构型和电子结构;在RHF CEP 4G水平上,全优化计算了(1,2 μ2 L) 2 Os3(CO) 1 0 (L :H ,Cl,Br,I)的分子几何构型和电子结构。计算结果表明,在这些体系中,电子由Os(CO) 3向Os(CO) 4转移。用RHF CEP 4G对这七个簇合物进行了简正振动频率分析,在计算得到振动频率及吸收强度的基础上,模拟了稳定平衡结构的红外光谱图,并对计算结果进行了比较和讨论。     

细菌视紫红质激发态动力学过程的实验与数值分析

本文采用差异吸收光谱法对化学增强型细菌视紫红质的状态变化进行了实验研究.发现在585 nm处明显存在一个稳定的中间过程.从分子动力学和实验出发,提出了一个适用于差异吸收光谱研究方法的数学模型,对菌紫质受激以后的动力学过程进行了模拟与数值分析.