Dinuclear Cu(II) complexes based on p‐xylylene‐bridged bis(1,4,7‐triazacyclononane) ligands: Synthesis,characterization, DNA cleavage abilities and evaluation of superoxide dismutase‐ and catalase‐like activities

Three new dinuclear Cu(II) complexes with the formulas [Cu₂(pxdmbtacn)Cl₄] ( 1 ), [Cu₂(pxdmbtacn)Cl_0.7(NO₃)_1.3(OH)₂(H₂O)_1.3]?6H₂O ( 2 ) and [Cu₂(pxdiprbtacn)Cl₄] ( 3 ) together with one previously reported complex, [Cu₂(pxbtacn)Cl₄] ( 4 ), were obtained from Cu(II) salts with three p‐xylylene‐bridged bis‐tacn ligands bearing pendant alkyl substituents or without pendant group. Complex 2 was structurally characterized as a centrosymmetric dinuclear molecule with each metal center being coordinated to some labile ligands in addition to one tacn ring. Based on the results of mass spectrometry and UV–visible spectroscopy, complexes 1 and 3 are capable of existing in aqueous solution as dinuclear species but 4 can partially form a dimer of the original dinuclear motif. Complexes 1 , 3 and 4 can all effectively cleave supercoiled DNA oxidatively in the presence of hydrogen peroxide. The superoxide dismutase (SOD) activities of 1 and 3 measured under physiological conditions are comparable to that of the native CuZnSOD enzyme but the enzymatic activity of 4 is about three‐ to fourfold lower. Furthermore, complexes 1 , 3 and 4 demonstrate moderate scavenging effect on hydrogen peroxide and their catalase activities are in the decreasing order of 3 > 1 > 4 .     

连续调节反衬度观察位相物体的新方法

在4F系统中,利用光栅可以完成位相振幅转换,能够实现连续调节反衬度,因而观察位相物体的各部分就更清楚。一、引言观察透明的位相物体,必需把位相的信息转换     

Light absorption by free semiconductor carriers in the presence of a laser wave

Within the framework of the conditions ; » ^–1 ( ^–1 is the mean time of momentum relaxation), the coefficient of absorption () of a weak electromagnetic wave by the free carriers of a polar semiconductor is calculated in the presence of a strong wave (of frequency ), for arbitrary values of and . Photon absorption by band electrons is due to these latter interacting with optical phonons (of frequency _o). The problem is solved by using an analogous approach to the theory of the linear Kubo reaction. The results are valid in the absence of electron heating, when a strong wave only influences the scattering probability. The appearance of a photostimulated tail of absorption is predicted for < _o, including the jump () for ( – _o + ) ₀T as well as peaks in the function () at the points _s=s (s=1, 2, 3,...). The value (₁) is determined by the formula for the absorption coefficient for one strong wave.Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 7, pp. 105–109, July, 1981.The authors are grateful to É. M. Épshtein and Sh. M. Kogan for useful discussions.     

CexGdyTb1-x-yP5O14晶体生长及其光谱

采用蒸发溶液法从磷酸溶液中生长出一系列CexGdyTb1-x-yP5O14晶体.测定了它们的结构.它们属于单斜晶系,空间群P21/c.测定了Ce0.9Gd0.1P5O14、Ce0.9Tb0.1P5O14和La0.8Gd0.1Tb0.1P5O14等晶体的光谱.首次观察到,将Gd加入CexTb1-xP5O14晶体中形成.CexGdyTb1-x-yP5O14时阻碍了Ce3+→Tb3+的能量传递,导致Ce3+的发射峰增强,Tb3+的5D4-FJ发射峰减弱、而5D3-7FJ发射峰增强.     

LD抽运的Nd:YAG陶瓷/KTP绿光激光器

报道了一种LD端面抽运Nd:YAG陶瓷、KTP腔内倍频的全固态连续波绿光激光器.当抽运功率为21.6 W时,1064 nm基频输出达到11.3 W,光—光转换效率为52.3%.采用Ⅱ类切割的KTP晶体作为腔内倍频介质,在直腔结构下获得了最大功率为1.86 W的532　nm绿光输出,光—光转换效率为7%.输出光斑具有高斯型强度分布,1 W输出时的M²因子约为1.7. 关键词： 全固态绿光激光器 Nd:YAG陶瓷 KTP倍频 直腔     

A Quenched CLT for Super-Brownian Motion with Random Immigration

A quenched central limit theorem is derived for the super-Brownian motion with super-Brownian immigration, in dimension d≥4. At the critical dimension d=4, the quenched and annealed fluctuations are of the same order but are not equal. W. Hong was supported by the Program for New Century Excellent Talents in University (NCET) and NSFC (Grant No. 10121101). O. Zeitouni was partially supported by NSF grant DMS-0503775.     

Low resistance dye-sensitized solar cells based on all-titanium substrates using wires and sheets

Low resistance dye-sensitized solar cells (DSSCs) based on all-titanium substrates were proposed in this paper. To minimize the internal resistance of DSSCs, the titanium wires and titanium sheets were used as the substrates of the photoanode and the counter electrode, respectively. Compared with the FTO substrate, titanium wires could absorb much diffused light by back reflection since the reflectivity in the titanium sheet was highly increased up to 53.12%. Furthermore, the transmittance of the front cover was increased by 13.2% using the super white glass instead of FTO substrate. The thickness of TiO₂ thin film coated on titanium wire was optimized to achieve a high cell performance. The efficiency of 5.6% for the cell was obtained with a J_sc of 15.41 mA cm⁻², V_oc of 0.59 V, and FF of 0.62. The results showed that the titanium-based DSSCs had superiority for producing the large-scale DSSCs without metal grid line.     

一类哈密顿系统的Abel积分之比单调性的判据

研究了一类哈密顿系统的两个Abel积分比值的单调性的条件,指出这个单调性条件可由文中给出的两个判定函数直接确定.     

缓冲层生长温度对In0.82Ga0.18As 薄膜结构及电学性能的影响

采用低压金属有机化学气相沉积(LP-MOCVD)技术,两步生长法在InP衬底上制备In_0.82Ga_0.18As材料。研究缓冲层的生长温度对In_0.82Ga_0.18As薄膜的结构及电学性能的影响。固定外延薄膜的生长条件,仅改变缓冲层生长温度(分别为410,430,450,470 ℃),且维持缓冲层其他生长条件不变。用拉曼散射研究样品的结构性能,测量四个样品的拉曼散射光谱,得到样品的GaAs的纵向光学(LO)声子散射峰的非对称比分别为1.53,1.52,1.39和1.76。测量样品的霍耳效应表明,载流子浓度随缓冲层生长温度变化而改变,同时迁移率也随缓冲层生长温度变化而改变。通过实验得出:缓冲层的生长温度能够影响In_0.82Ga_0.18As薄膜的结构及电学性能。最佳的缓冲层生长温度为450 ℃。