傅立叶变换激光腔内吸收光谱方法研究吸收谱线的强度与线形

在原有傅立叶变换激光腔内吸收光谱实验装置的基础上,利用信号差分方法减少了光强波动对实验干涉谱图的影响,改善了信噪比.通过对大气中氧气在760nm处的吸收谱线的绝对强度测量,验证了该方法的定量测量能力.在不同压力条件下对磷烷v=6伸缩局域模泛频吸收谱带进行了测量,获得了其谱线的自压力加宽和自压力线移参数.     

钚气溶胶环境中惰性气体氪迁移过程研究

放射性气体的安全性问题是涉及反应堆运行中必需研究的重要问题.因此在钚气溶胶环境中,对钚材料裂变产生的放射性气体裂变产物,需要研究其在钚气溶胶环境中的迁移过程.对放射性惰性气体Kr87,Kr88的实验测量数据进行了具体分析.依据它们具有钚材料直接裂变和作为固体裂变产物子体两种来源这一物理特性,在不同的制样时间对Kr87/Kr88比值变化规律进行分析.确立了这两种来源的在钚气溶胶环境中的物理图像和迁移过程的物理模型,并与实验数据进行比较以验证模型的正确性. 关键词： 钚气溶胶 气体裂变产物 放射性Kr87/Kr88 迁移过程     

细胞松弛素B阻断微核法鉴定男性个体辐射敏感性的方法初探

初步研究了男性个体辐射敏感性的鉴定方法及标准.采集50名男性志愿者的外周血,分别给予不同剂量X射线照射,采用细胞松弛素B阻断双核法测定微核率(MNF),通过二阶多项拟合法,绘制微核剂量效应选项中心标准曲线,将个人微核剂量效应曲线与标准曲线比对后判断个体辐射敏感性.0.0～2.5 Gy剂量范围内,剂量效应二阶多项拟合的中...     

A gauge theory for two-band model of Chern insulators and induced topological defects

In this paper a gauge theory is proposed for the two-band model of Chern insulators.Based on the so-calle't Hooft monopole model,a U(1)Maxwell electromagnetic sub-field is constructed from an SU(2)gauge field,from which arise two types of topological defects,monopoles and e2 merons.We focus on the topological number in the Hall conductance σ_xy=e²/hC,where C is the Chern number.It is discovered that in the monopole case C is indeterminate,while in the meron case C takes different values,due to a varying on-site energy m.As a typical example,we apply this method to the square lattice and compute the winding numbers(topological charges)of the defects;the C-evaluations we obtain reproduce the results of the usual literature.Furthermore,based on the gauge theory we propose a new model to obtain the high Chern numbers|C|=2,4.     

用于光学相干层析成像设备点扩散函数测量的模体制作与使用方法研究

点扩散函数一般用于成像光学系统的分辨率评价,而掺杂微球的模体经常被用于获取光学相干层析成像(OCT)系统的点扩散函数。采用一种简单快速的基于表面硅烷化处理的加工工艺,制作出掺杂直径为1μm聚苯乙烯微球的聚二甲基硅氧烷(PDMS)点扩散函数模体,该工艺无需任何打磨与抛光即可得到光洁度优良的模体表面。使用一台谱域OCT系统对该模体进行检测,通过处理OCT图像得到点扩散函数并计算得到OCT系统的轴向与横向分辨率,分别为6.8 mm和14.3 mm,与理论预测值十分接近,证明了点扩散函数模体评价方法的有效性。     

High power-added-efficiency AlGaN/GaN HEMTs fabricated by atomic level controlled etching

An atomic-level controlled etching(ACE)technology is invstigated for the fabrication of recessed gate AlGaN/GaN high-electron-mobility transistors(HEMTs)with high power added efficiency.We compare the recessed gate HEMTs with conventional etching(CE)based chlorine,Cl₂-only ACE and BCl³/Cl₂ACE,respectively.The mixed radicals of BCl₃/Cl₂were used as the active reactants in the step of chemical modification.For ensuring precise and controllable etching depth and low etching damage,the kinetic energy of argon ions was accurately controlled.These argon ions were used precisely to remove the chemical modified surface atomic layer.Compared to the HEMTs with CE,the characteristics of devices fabricated by ACE are significantly improved,which benefits from significant reduction of etching damage.For BCl₃/Cl₂ACE recessed HEMTs,the load pull test at 17 GHz shows a high power added efficiency(PAE)of 59.8%with an output power density of 1.6 W/mm at Vd=10 V,and a peak PAE of 44.8%with an output power density of 3.2 W/mm at Vd=20 V in a continuous-wave mode.     

Pressure dependence of the thermal stability in LiMn2O4

Structural stability in terms of the decomposition temperature in LiMn₂O₄ was systematically investigated by a series of high-temperature and high-pressure experiments.LiMn₂O₄ was found to have structural stability up to 5 GPa at room temperature.Under ambient pressure,the compound decomposed at 1300℃.The decomposition temperature decreased with increasing pressure,yielding more complex decomposed products.Below the decomposition temperature,the crystal structure of LiMn₂O₄ varied with pressure.The presented results in this study offer new insights into the thermal and pressure stability of LiMn₂O₄ materials as a cathode for lithium-ion batteries that can operate under extreme conditions.Therefore,these findings may serve as a useful guide for future work for improving lithium-ion batteries.     

13.56 MHz/2 MHz柱状感性耦合等离子体参数的对比研究

通过Langmuir双探针和发射光谱诊断方法,对比研究了驱动频率为13.56 MHz和2 MHz柱状感性耦合等离子体中电子密度和电子温度的径向分布规律.结果表明:在高频和低频放电中,输入功率的增加对等离子体参数产生了不同的影响,高频放电中主要提升了电子密度,低频放电中则主要提升了电子温度.固定气压为10 Pa,分别由高频和低频驱动时,电子密度的径向分布均为"凸型".而电子温度的分布差异比较明显,高频驱动时,电子温度在腔室中心较为平坦,在边缘略有上升;低频驱动时,电子温度随径向距离的增加而逐渐下降.为了进一步分析造成这种差异的原因,在相同放电条件下采集了氩等离子体的发射光谱图,利用分支比法计算了亚稳态粒子的数密度,发现电子温度的径向分布始终与亚稳态粒子的径向分布相反.继续升高气压到100 Pa,发现不论高频还是低频放电,电子密度的径向分布均从"凸型"转变为"马鞍形",较低气压时电子密度的均匀性有了一定的提升,但低频的均匀性更好.     

AlmNin (m+n=2–4)二元合金团簇结构和稳定性的密度泛函研究

在密度泛函理论的B3PW91水平上, 优化计算了AlmNin (m+n=2–4)团簇的几何结构、团簇基态的结合能、最高占据轨道与最低空轨道之间的能级间隙和可能的分离能. 结果表明, 随着团簇尺寸的增加, 能级间隙呈现奇偶振荡规律; Al2Ni2团簇具有最高的结合能, 易分离成Ni原子和Al2Ni团簇; 含Al的合金团簇最易先分离出一个Al原子, 而含Ni的合金团簇没有这种趋势.     

一种新的基于频域有限差分方法的小周期有机太阳能电池的光电特性

由MoO₃/Ag/MoO₃ （MAM）组成的多层膜结构非常有希望替代ITO作为有机太阳能电池中的透明阳极.然而,基于MAM结构的有机太阳能电池光吸收能力较弱.为此,引入了一种小周期短节距金属光栅,利用表面等离子激元增强活性层的光吸收.借助于频域有限差分方法求解麦克斯韦方程和半导体方程,探讨了有机太阳能电池结构的光学和电学性质.分析结果表明：与平面结构相比,活性层中的光吸收大大提高;同时,当凹槽宽度为4 nm,能量转换效率提高了49%.相关结果有助于更好地开发和利用无ITO层的有机太阳能电池.