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We survey recent progress achieved in understanding the impact of inelastic processes on coherent backscattering of light from cold atoms that are saturated by a powerful laser field.  相似文献   
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We review the previous conclusion [J.Y. Ryu, Y.C. Chung and S.D. Choi, Phys. Rev. B 32, 7769 (1984)] that the trace property Tr(ABC) = Tr(CAB) leads to two different cyclotron transition absorption formulae in the electron-phonon systems in the lowest order approximation. The pictorial expression and the calculated linewidths in Ge and Si show that the socalled EWC scheme is more seeming than the socalled MWC scheme. The difference is expected to disappear if we take into account all the higher order perturbation terms or start with the many body formalism in the complete scheme.  相似文献   
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High dose implantations of Fe into metals and semiconductors have been performed with beam energies up to 1 MeV at the UNILAC-injector at GSI. Unusual high concentrations of 70 atomic % for Si and 20 atomic % for Cu have been obtained, with doses of 1018 Fe/cm2 in the case of Si and several 1017 Fe/cm2 in the case of Cu. For Si the thickness of the layers were determined by Rutherford backscattering to be 4500 Å. These results are consistent with calculations, which show that these high concentrations are due to the reduction of the sputter yield at the relative high particle energies. Samples have been characterized using several complementary methods (Mössbauer Spectroscopy (MS), Rutherford Backscattering Spectroscopy (RBS), Auger electron Spectroscopy (AES). Scanning Electron Microscopy (SEM), X-ray diffraction (XRD)).  相似文献   
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This is our second paper devoted to the study of some non-linear Schrödinger equations with random potential. We study the non-linear eigenvalue problems corresponding to these equations. We exhibit a countable family of eigenfunctions corresponding to simple eigenvalues densely embedded in the band tails. Contrary to our results in the first paper, the results established in the present paper hold for an arbitrary strength of the non-linear (cubic) term in the non-linear Schrödinger equation.  相似文献   
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Nominally undoped InP wafers have been annealed in a phosphorus atmosphere under a pressure of about 5 bar at temperatures of 900 °C for about 80 h. It was found that the electrical properties of the samples changed considerably after this treatment. A room temperature resistivity of up to 2×107cm (semi-insulating behaviour) was obtained in the bulk of the samples. The resistivity finally obtained depends on the starting carrier concentration of the untreated samples. The Hall coefficient and Hall mobility have been measured up to 600 °C. The results can be interpreted in terms of a deep electronic level (E A=0.63 ... 0.65 eV below the conduction band). The Hall coefficient was always found to be negative resulting in a Hall mobility of 1.4 to 4.9×103 cm2/Vs. The highest resistivity in nominally undoped bulk InP so far reported in the literature [1] was =3.6 × 105cm. Therefore, this paper demonstrates for the first time that a really semi-insulating behaviour of >107 cm can be achieved for bulk InP with the purity of nominally undoped material (1015 to 1016cm–3).  相似文献   
40.
Idealized polymethines are defined as conjugated chain molecules with complete bond equilization and charge alternation. A constant π-bond order along the chain with N atoms has been derived for three types of polymethines which differ by the nature of the heteroatomic end groups. Corresponding to the number of π-electrons they are termined (N + 1)π-, Nπ- or (N ? 1)π-polymethines. This classification embraces closed shell as well as open shell systems. The relations for the energy eigenvalues, coefficients and derived quantities have been obtained in closed form. The results for the different classes of polymethines are strongly related. Their molecular properties should be similar.  相似文献   
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