Maximum-entropy data analysis

The reconstruction of physical quantities from (computer-) experimental data is very often hampered by the presence of noise, insufficient information and above all by the ill-posed nature of the underlying inversion problem. It will be demonstrated that the maximum entropy concepts is particularly suited for this type of data-analysis problems. It is based on Bayesian statistics and provides a consistent probabilistic theory to obtain unbiased results, independent of any model assumptions. This is particularly desirable if there is no additional information to justify these hypotheses. If, on the other hand, additional prior knowledge is available, it can be effectively incorporated into the computation, leading to more stringent confidence intervals.     

Quantitative electron probe microanalysis for the characterization of thin carbon-boron layers in fusion devices

Summary The first wall of the fusion device TEXTOR at the Forschungszentrum Jülich has been coated in situ with an amorphous hydrogen rich carbon/boron film (a-C/B:H) which reduces plasma impurities caused by the plasma surface interaction. The results of the coating process of the 35 m² large inner wall surface have been controlled by a recently developed modification of the quantitative electron probe microanalysis, which has been applied to 12 samples from specified positions inside the tokamak. The quantification itself is based on a Monte Carlo simulation of electron trajectories providing very accurate results for X-ray intensities emitted by elements present in the electron bombarded sample. The Monte Carlo results are used in the present work to calibrate the measured X-ray intensities emitted by boron and carbon from the a-C/B:H layers deposited on pure silicon substrates. As a result the total deposited mass of the layer per area unit as well as the composition of the layers (except hydrogen) could be determined very accurately. The relative errors were less than 7%. The limit of detectability were found to be in the range of one monolayer for boron as well as for carbon.     

Analysis of semiconducting materials by high-resolution radiofrequency glow discharge mass spectrometry

The analytical capabilities of a high-resolution mass spectrometer in combination with a 13.56 MHz glow discharge ion source for the analysis of semiconducting materials (silicon carbide and gallium arsenide) were studied. It was shown that single positively charged ions of sample material have about 10 eV higher average energy than the ions of the discharge and residual gas. Therefore effective energy separation of the ions of analyte from the ions of the discharge and residual gas was achieved by adjusting the ion transfer optics (breadth and position of energy slit), which improves the analytical capabilities of the developed method.Some analytical applications are presented to illustrate the performance of r.f. GDMS for the bulk analysis of semiconducting materials. The results of the trace element analysis of gallium arsenide and silicon carbide samples are compared with data of independent methods (LIMS, ICP-AES, SIMS).Dedicated to Professor Dr. rer. nat. Dr. h.c. Hubertus Nickel on the occasion of his 65th birthdayOn leave from the Institute of Inorganic Chemistry, 630090 Novosibirsk, Russia     

Shape transition from InAs quantum dash to quantum dot on InP(3 1 1)A

We report on the shape transition from InAs quantum dashes to quantum dots (QDs) on lattice-matched GaInAsP on InP(3 1 1)A substrates. InAs quantum dashes develop during chemical-beam epitaxy of 3.2 monolayers InAs, which transform into round InAs QDs by introducing a growth interruption without arsenic flux after InAs deposition. The shape transition is solely attributed to surface properties, i.e., increase of the surface energy and symmetry under arsenic deficient conditions. The round QD shape is maintained during subsequent GaInAsP overgrowth because the reversed shape transition from dot to dash is kinetically hindered by the decreased ad-atom diffusion under arsenic flux.     

A Tin(IV) Porphyrin with Two Axial Organometallic NCN‐Pincer Platinum Units

A tin(IV) porphyrin was combined with two axial NCN‐pincer platinum(II) fragments by utilizing the oxophilicity of the apical positions on the tin atom and the acidic nature of the NCN‐pincer platinum derived benzoic acid. The solid‐state structure determined by X‐ray crystallography revealed some close contacts between the pincer complexes and the meso‐p‐tolyl subsitutents of the porphyrin. It was shown by ¹H NMR spectroscopy that these close contacts were not present in solution and that this compound can potentially act as a novel building block for supramolecular architectures.     

Banach spaces of distributions having two module structures

After a discussion of a space of test functions and the corresponding space of distributions, a family of Banach spaces (B, ∥ ∥_B) in standard situation is described. These are spaces of distributions having a pointwise module structure and also a module structure with respect to convolution. The main results concern relations between the different spaces associated to B established by means of well-known methods from the theory of Banach modules, among them B₀ and $\text{B}\text{?}$, the closure of the test functions in B and the weak relative completion of B, respectively. The latter is shown to be always a dual Banach space. The main diagram, given in Theorem 4.7, gives full information concerning inclusions between these spaces, showing also a complete symmetry. A great number of corresponding formulas is established. How they can be applied is indicated by selected examples, in particular by certain Segal algebras and the A_p-algebras of Herz. Various further applications are to be given elsewhere.     

Jetmetriken und hyperbolische Geometrie

Ohne ZusammenfassungHerrn E. Heinz zum 65. Geburtstag gewidmet     

Isotrope Unterräume rationaler quadratischer Formen

Ohne ZusammenfassungDiese Arbeit wurde während eines Aufenthaltes von Schmidt in der Bundesrepublik Deutschland als Preisträger der Alexander von Humboldt-Stiftung geschrieben.