Negative and positive lateral shift of a light beam reflected from a grounded slab

We consider the lateral shift (LS) of a light beam reflecting from a dielectric slab backed by a metal. It is found that the LS of the reflected beam can be negative while the intensity of reflected beam is almost equal to the incident one under a certain condition. The explanation for the negativity of the LS is given in terms of the interference of the reflected waves from the two interfaces. It is also shown that the LS can be enhanced or suppressed under some other conditions. The numerical calculation on the LS for a realistic Gaussian-shaped beam confirms our theoretical prediction.     

All-fused-silica miniature optical fiber tip pressure sensor

An all-fused-silica pressure sensor fabricated directly onto a fiber tip of 125 microm diameter is described. Simple fabrication steps include only cleaving and fusion splicing. Because no chemical processes are involved, the fabrication is easy, safe, and cost effective. Issues in sensor design and loss analysis are discussed. The sensor has been tested for static pressure response, showing a sensitivity of 2.2 nm/psi, a resolution of 0.01 psi (68.9 Pa), a hysteresis of 0.025%, and capability of operation at temperatures up to 600 deegrees C. This miniature sensor may be suitable for medical diagnostics, environmental monitoring, and other industrial applications.     

Characterization of heat-assisted magnetic probe recording on CoNi/Pt multilayers

A method of heat-assisted magnetic recording (HAMR) potentially suitable for probe-based storage systems is characterized. In this work, field emission current from a scanning tunneling microscope (STM) tip is used as the heating source. Pulse voltages of 2–7 V were applied to a CoNi/Pt multilayered film fabricated on either bare silicon or oxidized silicon substrates. Different types of Ir/Pt and W STM tips were used in the experiment. The results show that thermally recorded magnetic marks are formed with a nearly uniform mark size of 170 nm on the film fabricated on bare silicon substrate when the pulse voltage is above a threshold voltage. The mark size becomes 260 nm when they are written on the identical film fabricated on an oxidized silicon substrate. The threshold voltage depends on the material work function of the tip, with W having a threshold voltage about 1 V lower than Pt. A synthesized model, which contains the calculation of the emission current, the simulation of heat transfer during heating, and the study of magnetic domain formation, was introduced to explain experimental results. The simulation agrees well with the experiments.     

惯性颗粒所见被动标量统计特性的DNS与模型研究

本文采用DNS方法,对惯性颗粒所见各向同性湍流中具有平均标量梯度的被动标量场统计特性进行了研究。结果表明：惯性对颗粒温度脉动强度,两相温度关联,自相关特性以及颗粒热流与两相交叉热流的统计特性具有明显的影响。在PDF方法的框架下,系统地推导了非等温气固两相流的PDF方程,且基于朗之万随机体系对方程进行了封闭,并利用前面的...     

冷凝法油气回收技术与应用

油品在储运和销售过程中部分轻烃组分挥发进入大气,造成资源浪费和环境危害.油气回收既可实现油气污染治理又能产生可观的经济效益.结合中国油气储运和销售环节的现状以及相关技术的发展,对几种油气回收的方法进行了对比分析,认为采用多元工质复叠(或自复叠)制冷技术的冷凝法具有较好的经济性和可靠性.介绍了自主研发的冷凝式油气回收设备...     

HNO分子基态的结构与解析势能函数研究

应用群论及原子分子反应静力学的方法, 导出了HNO分子基态电子态和合理的离解极限.利用优选出的密度泛函理论B3LYP方法结合6-311G **优化计算了HNO分子基态的平衡结构和谐振频率.计算结果表明基态HNO分子稳定态为C_S构型,电子组态为X¹A',平衡核间距分别为R_H-N=0.1065 nm,R_N-O=0.1200 nm,键角∠H-N-O=108.60°,离解能D_e=15.379 eV.基态简正振动频率分别为:弯曲振动频率ν₁=1575.6351 cm^-1,对称伸缩振动频率ν₂=1673.2890 cm^-1,反对称伸缩振动频率ν₃=2837.7856 cm^-1.在此基础上,应用多体项展式理论导出了基态HNO分子的全空间解析势能函数,该势能函数等值势能图准确再现了HNO分子平衡结构和离解能. 关键词： 势能函数 光谱常数 密度泛函方法     

LiNH2储氢材料中间隙H与掺杂原子交互作用对其释氢性能影响机理研究

采用基于密度泛函理论的赝势平面波第一性原理方法,研究了LiNH₂缺陷及其掺杂原子交互作用对其释氢影响.通过对其进行优化求得它们的局域最稳定结构并计算了含间隙H原子缺陷的LiNH₂及其掺杂合金的结合能、间隙缺陷形成能、态密度和电荷布居.结果表明: 系统结合能不能反映LiNH₂及其掺杂合金的释氢性质;平衡时,LiNH₂中有一定的间隙氢原子存在,Mg,Ti掺杂使形成能大大降低,大大增大了间隙氢的浓度. 间隙H原子在带隙引入了缺陷能级使带隙大大减小,提高释氢能力.间隙H原子导致[NH₂]^-中N-H原子间相互作用减弱,容易释氢.间隙H与[NH₂]^-中N存在共价作用,可以解释LiNH₂释氢反应中NH₃的放出.当存在掺杂时,N-H键的键强不均衡,部分较弱,部分较强,较弱的N-H键中H容易放出. 关键词： 储氢材料 第一性原理 缺陷 释氢机理     

改进的含温有界原子模型对金的电子物态方程的计算

在改进的含温有界原子模型基础上,在中心场近似下用分波法来处理部分自由电子密度分布函数.通过平均近似处理,给出劈裂的能带.在原子结构的自洽计算中采用能带重叠作为自由电子的动态判据.大量计算了Au的电子压强、能量、热容以及各种热力学系数. 关键词： 自洽场原子结构 状态方程 原子能量 电子压强     

磁控溅射制备的W,WSi2,Si单层膜和W/Si,WSi2/Si多层膜应力

采用直流磁控溅射技术制备了厚度约100 nm的W,WSi2,Si单层膜和周期约为20 nm,Si膜层厚度与周期的比值为0.5的W/Si,WSi2/Si周期多层膜.利用台阶仪对镀膜前后基底表面的面形进行了测试,计算并比较了不同膜系的应力值.结果表明:W单层膜表现出较大的压应力,而W/Si周期膜则表现为张应力.WSi2单层...     

Investigation of 515 nm green-light emission for full color emission LaAlO3 phosphor with varied valence Eu

Photoluminescence and lifetime decay properties of varied valence Eu were employed to investigate the luminescence mechanism of green-light emission positioned at ∼515 nm for full color emission LaAlO₃ phosphor co-doped with Eu²⁺ and Eu³⁺. The enhanced ⁵D₂→⁷F₃ transition emission of Eu³⁺ was assigned for this green emission. Energy transfer between Eu²⁺ and ⁵D₂ level of Eu³⁺ was proposed, which results in the enhancement of ⁵D₂→⁷F₃ transition emission. In addition, energy transfer relations between host-Eu and charge transfer state (CTS)-Eu were also discussed associated with the PLE spectra and band schemes.