Si／SiNx／SiO2多层膜的光致发光

采用射频磁控溅射法,制备了具有强光致可见发光的纳米Si/SiNx/SiO2多层膜,利用傅立叶红外吸收(FTIR)谱,光致发光(PL)谱对其进行了研究。用260nm光激发得到的PL谱中观察到高强度的392nm(3.2eV)和670nm(1.9eV)光致发光峰,分析认为它们分别来自于缺陷态≡Si-到价带顶和从导带底到缺陷态≡Si-的辐射跃迁而产生的光致激发辐射复合发光。PL谱中只有370nm(3.4eV)处发光峰的峰位会受退火温度的影响,结合FTIR谱认为370nm发光与低价氧化物—SiOx(x<2.0)结合体有密不可分的关系。当SiO2层的厚度增大时,发光强度有所增强,800℃退火后出现最强发光,认为具有较大SiO2层厚度的Si/SiNx/SiO2结构多层膜更有利于退火后形成Si—N网络,能够得到更高效的光致发光。用量子限制-发光中心(QCLC)模型解释了可能的发光机制,并建立了发光的能隙态(EGS)模型。     

氦原子1s2s组态的斯塔克效应

以有效哈密顿方法为基础,对氦原子1s2s组态的斯塔克效应进行了理论计算.计算结果表明,在二级近似下,氦原子1s2s能级结构发生非线性偏离,偏离的程度随着电场强度的增加而增大.     

Quantum Information Splitting Based on Current Cavity QED Techniques

We propose two schemes for quantum information splitting via W-class state. The first scheme is based on the interaction of single atom with single-mode field, while the second scheme is based on the simultaneous interaction of two atoms with single-mode cavity. For the first scheme, the difIiculty of two atoms required to be simultaneously sent through one cavity is avoid. For the second scheme, it is immune to thermal field. Both schemes are experimentally feasible based on current cavity QED techniques.     

电子对於原子半导体晶格的形变作用

乾根—别卡曾经分析过原子晶体中的极化子问题。文中指出,其中弹性形变的考虑是不正确的,而且“绝热型”的极化子,在例如Ge,Si等原子晶体中存在的可能性是十分微小的。以微扰论为基础的计算证明,电子引起的局部体积变化发生在半径≈λ的范围内,λ是以声速运动的电子的德布罗意波长。局部体变的数值等於E/(α+4/3μ)(E为形变势常数,α和μ分别为体变和切变模量)。局部体变还在样品中引起一个均匀的形变,两者合起来使样品体积改变E/α。具体的分析证明,在类氢的杂质能级中的电子使样品体积产生同样的体积变化。这个效应是相当大的;例如,在Ge和Si这样的晶体中,效应甚至可以舆实验所观测到Ⅲ,Ⅴ族杂质原子的体积效应相比拟。导带中低速电子能量的改变约等於(电子质量/原胞质量)(E/(kΘ_D))E;在Ge晶体中,如果E=1—10电子伏,能量改变是0.001—0.1电子伏。相应的有效质量改变是1/1000—1/10电子质量。在类氢杂质能级中,电子能量改变远比上值为小;理论上电子—晶格互作用有着可能致使类氢能级自发电离。     

具有相交性质的近小扭转映射的不变环面的保持性

In this paper we investigate the nearly small twist mappings with intersection property. With a certain non-degenerate condition, we proved that the most of invariant tori of the original small twist mappings will survive afer small perturtations. The persisted invariant tori are close to the unperturbed ones when the perturbation are small. The orbits reduced by those mappings are quasi-periodic in the invariant tori with the frequences closing to the original ones.     

T-B样条曲线及其应用

给出一种基于三角函数的类B样条设计方法,称其为 T B样条,它具有 B样条曲线曲面的主要优点,它还能够无需有理形式即可精确表示圆弧、椭圆弧等二次曲线弧以及球面、椭球面等二次曲面片.     

Approximately unital operator systems

The main theme of this paper is to consider a notion of 'approximately unital operator systems' including both C*-algebras and unital operator systems.The goals are to prove a version of the Choi-Effros theorem for these systems,to introduce a functorial process for forming an approximately unital operator systems from a given matrix ordered vector space with a proper approximate order unit,to study second duals of these objects and to prove that a C*-algebra can be characterized as an approximately unital ...     

新型绿色发光材料(Ce0.67Tb0.33)MgAl11O19∶Mn2+的合成及其光学性能

采用高温固相法成功地合成了新型高效绿色荧光粉(Ce0.67Tb0.33)Mg1-xAl11O19∶xMn2+。通过XRD和荧光光谱等对其结构及发光性能进行了系统研究。结果表明:新合成的(Ce0.67Tb0.33)Mg1-xAl11O19∶xMn2+与典型的商用绿粉(Ce0.67Tb0.33)MgAl11O19(CMAT)具有相同的晶体结构;激发光谱处于237～326 nm范围内,由一个峰位位于291 nm的宽激发带组成,这是典型的Ce3+的特征激发;在紫外光激发下,该荧光粉除了在490,541,590,620 nm存在Tb3+的特征发射峰外,还在516 nm出现了一个较强的归属于Mn2+的4T1g(G)→6A1g(S)电子跃迁的宽发射峰。Mn2+作为共激活剂增大了该荧光材料在绿色区域的发射面积,其中(Ce0.67Tb0.33)Mg0.850Al11O19∶0.150Mn2+荧光粉发射光谱的积分面积最大,为CMAT的226%,其CIE坐标为(0.194,0.695),比CMAT(0.288,0.572)更加接近NTSC标准值(0.21,0.71),即Mn2+的引入不但提高了荧光粉的发光效率,而且改善了其色纯度。结果表明新型(Ce0.67Tb0.33)Mg1-xAl11O19∶xMn2+绿色荧光粉比传统的CMAT在显示领域具有更好的潜在应用前景。     

An efficient algorithm for Bermudan barrier option pricing

An efficient option pricing method based on Fourier-cosine expansions was presented by Fang and Oosterlee for European options in 2008,and later,this method was also used by them to price early-exercis...