随机环境中双移民生灭过程的极限性质

引入了随机环境中双移民生灭过程的概念，定义了过程的模态指示函数，在此基础上研究了其转移矩阵的平稳分布，给出了平稳分布众数的位置与模态指示函数之间的关系．研究了平稳分布的众数与边界关系．     

分叉问题的几何描述及其计算方法

本文通过一个构造的向量场,建立了非线性代数方程组的解流形与对应向量场的不变流形之间的等价关系,把解流形的分叉问题转化为对向量场奇点附近局部性态的研究。这种思路具有几何直观性,并为解流形的跟踪与分叉计算提供了一套新的数值方法。     

中物院远红外自由电子激光实验研究

中国工程物理研究院基于射频直线加速器技术的远红外自由电子激光(FIR-FEL)实验取得阶段性进展,于2005年3月24晚8时30分首次出光, 并多次重复. 中心波长115μm, 谱宽1%.介绍了实验系统的主要组成部分和主要实验结果.     

Lorentz-Compton佯谬与一个双赢判决性散射实验设计

通过对“可见光区域是否存在Compton效应”的讨论而进一步深化到经典条件下“光的量子理论能否包含光的经典电磁理论”的实验验证,发现了Lorentz-Compton佯谬,并基于逆Compton散射设计了一个敏感而又可行的双赢判决性散射实验来解决此佯谬。     

B(0,N)-graded Lie superalgebras coordinatized by quantum tori Dedicated to Professor Sheng GONG on the occasion of his 75th birthday

We use a fermionic extension of the bosonic module to obtain a class of B(0, A)graded Lie superalgebras with nontrivial central extensions.     

Convergence Rates in the Law of Large Numbers under Sublinear Expectations

In this note, we study convergence rates in the law of large numbers for independent and identically distributed random variables under sublinear expectations. We obtain a strong L^p-convergence version and a strongly quasi sure convergence version of the law of large numbers.     

Effects of Si doping on the structural and electrical properties of Ge2Sb2Te5 films for phase change random access memory

The effects of Si doping on the structural and electrical properties of Ge₂Sb₂Te₅ film are studied in detail. Electrical properties and thermal stability can be improved by doping small amount of Si in the Ge₂Sb₂Te₅ film. The addition of Si in the Ge₂Sb₂Te₅ film results in the increase of both crystallization temperature and phase-transition temperature from face-centered cubic (fcc) phase to hexagonal (hex) phase, however, decreases the melting point slightly. The crystallization activation energy reaches a maximum at 4.1 at.% and then decreases with increasing dopant concentration. The electrical conduction activation energy increases with the dopant concentration, which may be attributed to the increase of strong covalent bonds in the film. The resistivity of Ge₂Sb₂Te₅ film shows a significant increase with Si doping. When doping 11.8 at.% of Si in the film, the resistivity after 460 °C annealing increases from 1 to 11 mΩ cm compared to the undoped Ge₂Sb₂Te₅ film. Current-voltage (I-V) characteristics show Si doping may increase the dynamic resistance, which is helpful to writing current reduction of phase-change random access memory.     

介质极化的瞬时相位与振幅

求解电子运动的二阶微分方程，在旋转波近似下，介质在外场突然变化时产生的瞬态感应极化与外场同频，但相位总是落后，最大落后为π/2；振幅大小与初态有关，随时间按指数规律衰减，衰减快慢由介质的阻尼系数决定。     

红外光谱对碱土金属二元羧酸盐结构的研究

研究了三十种二元羧酸金属盐的红外光谱，讨论了金属离子和二元酸的种类对二元酸盐配位结构的影响。发现Mg盐、Ba盐，Sr盐为螯合配位，Ca盐，Zn盐中同时存在螯合配位和桥式配位，二元酸的种类对羧酸盐配位结构没有影响。对羧酸盐在常温和熔融后的栩位方式和结构上的差异的研究结果表明，Mg盐，Ca盐与Sr盐，Ba盐在熔融后的结构变化不同。     

Influence of Yb-Doped Nanoporous TiO2 Films on Photovoltaic Performance of Dye-Sensitized Solar Cells

Yb-doped TiO2 pastes with different Yb/TiO2 weight ratios are prepared in the sol-gel process to obtain dyesensitized solar cells （DSCs）. The nanocrystalline size of Yb-TiO2 becomes smaller and the lattice parameters change. Lattice distortion is observed and dark current is detected. It is found that a part of Yb existing as insulating oxide Yb2O3 state acts as barrier layers at the electrode-electrolyte interface to suppress charge recombination. A Yb-doped TiO2 electrode applied in DSCs leads to a higher open-circuit voltage and a higher fill factor. How the Yb-doped TiO2 films affect the photovoltaic response of DSCs is discussed.