酰胺衍生寡聚DTPA钆配合物的合成、表征及弛豫性能

以寡聚二乙撑三胺-N,N′-二(乙酰苯胺)-N,N′,N″-三乙酸([H₃L]_n)为配体, 与GdCl₃在二甲基甲酰胺-水混合溶剂中组装得到了寡聚金属螯合物. 采用傅里叶变换红外光谱(FTIR)、元素分析、核磁共振氢谱(¹H NMR)和热重及差热分析(TG-DTA)确定了寡聚金属螯合物的组成单元为[GdL(H₂O)]·4H₂O, 即寡聚配体的每个链节与1个金属离子配位. 采用反转恢复法测试了寡聚金属螯合物和小分子配合物Gd-DTPA(DTPA为二乙撑三胺五乙酸)的纵向弛豫时间T₁, 该寡聚金属螯合物体外弛豫率为8.526 mmol·L^-1·s^-1, 与配合物Gd-DTPA的弛豫率(4.370 mmol·L^-1·s^-1) 相比, 弛豫性能明显提高.     

聚苯胺的表面修饰及防腐性能

用八甲基环四硅氧烷(D₄)对聚苯胺(PANI)进行表面修饰, 通过对产物的循环伏安(CV)、 极化曲线(Tafel)以及接枝率的表征分析, 考察了反应温度、 反应时间、 单体用量和pH值对产物的接枝效果、 分散性和腐蚀电位的影响. 同时, 通过循环伏安(CV)、 紫外-可见光谱(UV-Vis)、 红外光谱(FTIR)、 X射线衍射分析(XRD)和热重分析(TGA), 对PANI表面修饰前后的结构和性能进行了比较. 结果表明, 通过D₄对PANI颗粒表面进行修饰, PANI的分散性、 分散稳定性和和防腐能力得到显著提高.     

倒锥形抗反射表面微结构的构筑

利用Langmuir-Blodgett(LB) 技术在单晶硅表面转移岛状硬脂酸单层膜图案, 通过各向异性的湿法刻蚀构筑倒锥形表面微结构. 倒锥形结构的深度及表面抗反射性能主要与刻蚀的时间有关. 这种方法结合了自组装面积大和湿法刻蚀成本低的优点, 是一种廉价、高效的制备大面积抗反射微结构的方法, 在降低光学器件和太阳能电池的成本方面具有潜在应用价值.     

Fabrication,Crosslinking and in vitro Biocompatibility of a Novel Degradable Nano-structure Urethral Tubular Scaffold

A degradable poly(lactic-co-glycolic acid, LA:GA=80:20)(PLGA) urethral tubular scaffold was fabricated by electrospinning. In order to enhance the mechanical properties, the scaffold was crosslinked with glutaraldehyde. The structure and properties of the crosslinked scaffolds were investigated by the mechanical property testing, scanning electron microscopy(SEM), degradability test in vitro and 3-(4,5)-dimethylthiahiazo(-z-yl)-3,5-diphenytetrazo- liumromide(MTT). The results show that the scaffold has the nano-structure. The pore size and the porosity are suitable for cell seeding, growth and extracellular matrix production. Although influenced by the crosslinking slightly, the pore size and the porosity could still support cell proliferation and tissuse formation. The mechanical properties are remarkably increased by the crosslinking of glutaraldehyde, and it could meet the demands of a urethral stent. The scaffold could completely collapse within 70 d. The results of the biocompatibility test show that the PLGA scaffold had no cytotoxicity.     

双(环戊二烯基)二氯化锆催化合成乙烯-笼型倍半硅氧烷杂化共聚物及其结构表征

通过双(环戊二烯基)二氯化锆(Cp₂ZrCl₂)催化剂和改良的甲基铝氧烷(MMAO)助催化剂, 合成了无机-有机杂化共聚物. 研究了2种具有不同单乙烯基反应基团的笼型倍半硅氧烷(POSS)与乙烯的聚合. 对共聚产物的结构、 热力学性质、 分子量及其分布等进行了研究. 共聚单体(POSS)的插入率在0.01%~0.30%之间, 随着共聚单体在共聚物中摩尔分数的增大, 聚合物的熔点和熔解热降低. 共聚物的热重分析结果显示, 乙烯-POSS共聚物拥有更高的热分解温度以及较高的热分解残留量. 随着POSS的加入, 聚合物的分子量明显提高, 聚合物的分子量分布变宽.     

Drinfeld Twist and Symmetric Bethe Vectors of Open XYZ Chain with Non-Diagonal Boundary Terms

With the help of the Drinfeld twist or factorizing F-matrix for the eight-vertex solid-on-solid(SOS) model,we find that in the F-basis provided by the twist the two sets of pseudo-particle creation operators simultaneously take completely symmetric and polarization free form.This allows us to obtain the explicit and completely symmetric expressions of the two sets of Bethe states of the model.     

带有增益的单微环谐振器的光速控制行为

带有损耗的光波导微环谐振器在实现光速控制时存在输出脉冲能量损耗大、脉冲形状畸变严重等问题。基于带有增益和带有损耗的微环谐振器的传输特性之间的对称性,计算分析了单微环谐振器的透射率、群折射率和群速度色散等特性,分析了增益和损耗对微环谐振器输出特性影响的机制。计算了带有增益的微环谐振器的光速控制行为,并与带有损耗的微环谐振器进行对比。结果显示,带有增益的微环谐振器输出脉冲不分裂且有较大的输出强度。脉冲延迟量和超前量比损耗系统大,可用于光速控制,克服了微环带有损耗时产生的光强损耗和脉冲畸变。     

High spin band structure in 139Nd

High-spin states in 139Nd nucleus have been reinvestigated with the reaction 128Te (16O, 5n) at a beam energy of 90 MeV. The level scheme has been expanded with spin up to 47/2 h. At the low spin states,the yrast collective structure built on the vh(-1)(11/2) multiplet shows a transitional shape with γ≈32° according to calculations of the triaxial rotor-plus-particle model. Three collective oblate bands with γ～-60° at the high spin states were identified for the first time. A band crossing is observed around hw ～0.4 MeV in one oblate band based on the 25/2- level.     

气流床气化炉壁面熔渣行为模拟

本文对气流床煤气化炉内高温合成气和壁面渣层的流动与传热传质过程进行了分析,建立了渣层流动、传热传质和相变数理模型,采用VOF方法对渣层和气体之间自由界面进行追踪,采用射线追踪方法(DTRM)计算辐射换热,采用焓法计算渣层相变,熔融态渣滴在渣层表面的沉积通过源项引入.应用所建立的数学模型对实验室规模的Texaco煤气化炉进行了模拟.结果表明:气化炉壁面换热系数从上到下先增加再减少最后再增加;炉膛温度升高,固态渣层厚度减少;壁面温度升高,固态渣层厚度减少.     

Activation of Hydrogen-Passivated Mg in GaN-Based Light Emitting Diode Annealing with Minority-Carrier Injection

We discuss an issue on the activation of p-GaN material under different annealing conditions and study the mechanism for the p-GaN activation. Under annealing in nitrogen, it is found that hydrogen cannot be completely removed from p-GaN. The experiments also indicate that rudimental hydrogen can exist stably in a certain state where hydrogen does not passivate the Mg acceptor in the sample annealing under bias. However, making additional annealing in nitrogen, we find that the steady state hydrogen can be decomposed and the Mg-H complex could generate again. Hydrogen remaining in the layer seems to play a major role in this reversible phenomenon.