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991.
We prove a theorem about idempotents in compact semigroups. This theorem gives a new proof of van der Waerden’s theorem on arithmetic progressions as well as the Hales-Jewett theorem. It also gives an infinitary version of the Hales-Jewett theorem which includes results of T. J. Carlson and S. G. Simpson. Research supported by the National Science Foundation under Grant No. DMS86-05098.  相似文献   
992.
A novel method to eliminate T3 from gross sera/plasma based on prior treatment with 8-anilino-1-naphthalene sulphonic acid has been standardized. This method is rapid with a minimum loss of protein and uses only small quantities of charcoal. The treated sera have been tested for acceptance in the RIA system for routine assays.  相似文献   
993.
Summary The influence of internal degrees of freedom on the behaviour of one-dimensional systems is discussed. For systems with half-filled bands the coupling to internalviz. lattice coordinates decides whether Peierls distortion is caused by intramonomer coordinates or by a lattice coordinate. Thereby the various intramonomer degrees of freedom act cooperatively. We show that there is a small regime of parameters where both kinds of distortion exist simultaneously. For increasing temperature we find that distortions can also move from the lattice coordinate to the intramonomer coordinate.  相似文献   
994.
High-average-power and high-energy lasers with good beam quality are fundamental tools for pumping high-peak and high-average-power ultrafast Ti:sapphire laser systems. Laser-diode (LD) pumped solid slate lasers with phase conjugation offer a unique combination of efficiency, reliability, and compactness. We present the design details and performance characteristics of a 360-W 1-kHz LD pumped Nd:YAG phase-conjugated laser. We also discuss the basic design aspects and present our preliminary experimental investigations on ultrashort-pulse laser systems.  相似文献   
995.
This paper presents a review of our current experimental research on GaP nanowires grown by a vapor deposition method. Their structural, electrical, opto-electric transport, and gas-adsorption properties are reviewed. Our structural studies showed that a GaP nanowire consisted of a core–shell structure with a single-crystalline GaP core and an outer Ga2O3 layer. The individual GaP nanowires exhibited n-type field effects. Their electron mobilities were in the range of about 6 to 22 cm2/V s at room temperature. When the nanowires were illuminated with an ultraviolet light source, an abrupt increase of conductance occurred resulting from carrier generation in the nanowire and de-adsorption of adsorbed OH- or O2 - ions on the Ga2O3 surface shell. Using an intrinsic Ga2O3 shell layer as a gate dielectric, top-gated GaP nanowire field-effect transistors were fabricated and characterized. Like other metal oxide nanowires, the carrier concentration and mobility of GaP nanowires were significantly affected by the surface molecular adsorption of OH or O2. The GaP nanowire devices were fabricated as sensors for NO2, NH3, and H2 gases by using a simple metal decoration technique. PACS 73.63.-b; 72.80.Ey; 85.35.-p  相似文献   
996.
997.
A file ofn records can be sorted in linear time givenO(log(n)) processors. Four such algorithms are presented and analyzed. All of them have reasonable hardware requirements; no memory access conflicts are generated; a constant number of communication lines per processor are needed (except for one case); and the space requirements areO(n) orO(n log(log(n))).  相似文献   
998.
999.
This work is supported in part by the fund OTKA (No. 5-134).  相似文献   
1000.
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