小型化电谐振人工特异材料研究

详细分析了电谐振人工特异材料设计原理,并结合等效电路模型通过加载等效电感、等效电容和接地等方法,将相同尺寸的工字形结构工作频率从12.21 GHz降到了5.46 GHz,小型化效果明显.该成果不仅对于不同结构人工特异材料小型化设计提供了重要的参考,同时也为设计不同性能、不同工作频率的人工特异材料提供了明确的研究方向和有效的途径.     

FeMnP_(1-x)T_x(T=Si,Ga,Ge)系列化合物机械性能的第一性原理研究

以密度泛函理论为基础,使用投影缀加波方法、VASP程序包研究了FeMnP_(1-x)T_x(T=Si,Ga,Ge)化合物的力学性质,结果表明FeMnP_(1-x)Ga_x化合物的晶格参数、弹性常数和电子结构与FeMnP_(1-x)Ge_x化合物比较接近,同时该化合物在力学上稳定,是预期具有较大的磁熵变和高磁热效应的材料.依据Pugh判据,FeMnP_(0.67)T_(0.33)(T=Si,Ga,Ge)化合物具有良好的延展性,三者之中FeMnP_(0.67)Ga_(0.33)韧性最好,FeMnP_(0.67)Si_(0.33)韧性相对较差,说明Ga替代P可改善此类化合物的机械性能.最后从化合物体系电子总态密度随不同掺杂T原子的演化规律解释了自洽计算得到的弹性常数的变化规律.     

37-element solar adaptive optics for 26-cm solar fine structure telescope at Yunnan Astronomical Observatory

A 37-element solar adaptive optics （AO） system was built and installed at the 26-cm solar fine structure telescope of Yunnan Astronomical Observatory. The AO system is composed of a fine tracking loop with a tip/tilt mirror and a correlation tracker, a high-order correction loop with a 37-element deformable mirror, a correlating Shack-Hartmann wavefront sensor based on the absolute difference algorithm, and a real time controller. The system was completed on Sep. 28, 2009 and was used to obtain AO-corrected high-resolution solar images. The contrast and resolution of the images are clearly improved after wavefront correction by AO. To the best of out knowledge, this system is the first solar AO system in China.     

Insights into the nature of X(3872) through B meson decays

We study the \begin{document}$ B_{c,u,d}\to X(3872)P $\end{document} decays in the perturbative QCD (PQCD) approach, involving the puzzling resonance \begin{document}$ X(3872) $\end{document}, where P represents a light pseudoscalar meson (K or π). Assuming \begin{document}$ X(3872) $\end{document} to be a \begin{document}$ 1^{++} $\end{document} charmonium state, we obtain the following results. (a) The branching ratios of the \begin{document}$ B^+_c\to X(3872)\pi^+ $\end{document} and \begin{document}$ B^+_c\to X(3872) K^+ $\end{document} decays are consistent with the results predicted by the covariant light-front approach within errors; however, they are larger than those given by the generalized factorization approach. (b) The branching ratio of the \begin{document}$ B^+\to X(3872)K^+ $\end{document} decay is predicted as \begin{document}$ (3.8^{+1.1}_{-1.0})\times10^{-4} $\end{document}, which is smaller than the previous PQCD calculation result but still slightly larger than the upper limits set by Belle and BaBar. Hence, we suggest that the\begin{document}$ B^{0,+}\to X(3872)K^{0,+} $\end{document} decays should be precisely measured by the LHCb and Belle II experiments to help probe the inner structure of \begin{document}$ X(3872) $\end{document}. (c) Compared with the \begin{document}$ B_{u,d}\to X(3872)K $\end{document}decays, the \begin{document}$ B_{u,d}\to X(3872)\pi $\end{document} decays have significantly smaller branching ratios, which drop to values as low as \begin{document}$ 10^{-6} $\end{document}. (d) The direct CP violations of these considered decays are small (\begin{document}$ 10^{-3}\sim 10^{-2} $\end{document}) because the penguin contributions are loop suppressed compared to the tree contributions. The mixing-induced CP violation of the \begin{document}$ B\to X(3872)K^0_S $\end{document} decay is highly consistent with the current world average value \begin{document}$ \sin2\beta=(69.9\pm1.7)$\end{document}%. Experimentally testing the results for the branching ratios and CP violations, including the implicit \begin{document}$S U(3)$\end{document} and isospin symmetries of these decays, helps probe the nature of \begin{document}$ X(3872) $\end{document}.     

Effect of interface-roughness scattering on mobility degradation in SiGe p-MOSFETs with a high-k dielectric/SiO2 gate stack＊

A physical model for mobility degradation by interface-roughness scattering and Coulomb scattering is proposed for SiGe p-MOSFET with a high-k dielectric/SiO2 gate stack. Impacts of the two kinds of scatterings on mobility degradation are investigated. Effects of interlayer （SiO2） thickness and permittivities of the high-k dielectric and interlayer on carrier mobility are also discussed. It is shown that a smooth interface between high-k dielectric and interlayer, as well as moderate permittivities of high-k dielectrics, is highly desired to improve carriers mobility while keeping alow equivalent oxide thickness. Simulated results agree reasonably with experimental data.     

镥的激光共振电离同位素选择性研究

本文在速率方程基础上通过数值模拟方法 ,对镥的激光共振电离通道 :5d6s2 2 D3 /2 (5 73.6 5 5nm)→5d6s6 p4F3 /2 (6 4 2 .5 18nm)→ 6s6 p2 4P1/2 (6 4 3.5 4 8nm)→Autoionizationstate的激光诱导同位素选择性进行了研究。在实际实验条件下用这一方法计算得到的激光波长对激光诱导同位素选择性的关系与实验结果相符合。探讨了在偏振激光作用的情况下各种激光参数 (波长、带宽和激光强度 )对激光诱导同位素选择性的影响 ,并提出了在一定实验条件下激光共振电离质谱计较为准确地测定同位素比值的方法。这一理论方法 ,同样适用于研究其它元素的激光共振电离同位素选择性和选择激光同位素分离电离通道     

由聚苯胺粒子组成的电流变液的研究

由经碱处理的掺杂态聚苯胺（ＰＡｎ）制得高介电常数的半导体ＰＡｎ粒子，将其悬浮于电绝缘油可组成电流变液，讨论了电流变（ＥＲ）液的静态屈服应力（τ＿ｓ），电流密度等性能与ＰＡｎ的介电常数（ε＿ｐ），导电率（σ），体积分数和应用电场强度的关系。对导电率相同的ＰＡｎ粒子，用氨水处理的ＰＡｎ粒子ε＿ｐ较用ＮａＯＨ液处理的高，前者在σ足够低如σ≤１．０×１０￣（－７）／ｃｍ时，ＥＲ液的τ＿ｓ随偶极系数的平方（β￣２）的增大而呈现非线性增加；后者ＥＲ液的τ＿ｓ随β￣２的增大出现一最大值．结果表明：由聚苯胺粒子可组成高电流变活性的无水ＥＲ液．     

利用皮秒脉冲激光驱动瞬态X射线激光

报道了利用皮秒激光驱动产生瞬态类镍银X射线激光的实验结果.采用一路脉冲宽度为数百皮秒的激光作为预脉冲，配合另一路皮秒激光作为主脉冲联合驱动平面靶，获得了一定强度的类镍银X射线激光输出，输出能量约为5—10nJ. 关键词： 瞬态X射线激光 长短脉冲联合驱动 皮秒脉冲激光     

A convenient synthesis of 2β,3α-dihydroxyurs-12-en-28-oic acid as a natural diastereoisomer of corosolic acid

2β,3α-Dihydroxyurs-12-en-28-oic acid（6） is a naturally occurring diastereoisomer of corosolic acid with glycogen phosphorylase inhibitory activity.A new strategy for the semi-synthesis of 6 was developed.Using the commercially available ursolic acid（1） as the starting materials,6 was synthesized through five facile reactions with a high stereoselectivity and an overall yield of 47.3%.The structure of 6 was confirmed by optical rotation.ESI-MS,¹H NMR and ¹³C NMR data.     

Monitoring the kappa number of bleached pulps based on FT-Raman spectroscopy

Cellulose - A new strategy was proposed to determine the Kappa number of bleached Eucalyptus globulus kraft pulps based on FT-Raman spectroscopy. Before modeling, smoothing (Savitzky-Golay),...