Calculation of the shear stresses in (111)- and (001) semiconductor substrates with film edges

Assuming a film-edge induced stress distribution in an isotropic crystal, the shear stresses in the glide systems of a diamond-type semiconductor substrate are calculated. Quantitative information on magnitude and position of the respective shear stress maxima is obtained in dependence on crystal orientation and technologically relevant film configurations.     

Subwavelength depth resolution in near-field microscopy

A generalized Radon transform is presented that relates, for the case of an evanescent wave that is incident upon a weakly scattering medium, the homogeneous components of the scattered field to the three-dimensional Fourier transform of the dielectric susceptibility. This relationship is used within the context of total internal reflection microscopy to reconstruct the depth structure of the dielectric susceptibility from simulated scattered field data.     

Anisotropic magnetic susceptibility and phase transitions in intercalated graphite: KC24

We measured the magnetic susceptibility of KC₂₄ from 4.2 to 300 K and found no anomalies near the phase transitions at 95 and 123 K as observed in the resistivity. We conclude that the transitions must be due to order- disorder transitions of the K atoms and not charge density wave formation. The susceptibility is anisotropic; at room temperature $\text{χ}{}_{\mathrm{g}}\text{(}\text{H}\text{6}\text{c}\text{)= + 1.50 × 10}{}^{-6}\text{emu g}{}^{-1}\text{± 2\%}$ and $\text{χ}{}_{\mathrm{g}}\text{(}\text{H}\text{⊥}\text{c}\text{)= + 0.045 × 10}{}^{-6}\text{emu g}{}^{-1}\text{± 50\%}$. This anisotropy is not understood in terms of simple rigid band extensions of the band structure of graphite.     

Photoluminescence of Al x Ga1−x As/GaAs quantum well heterostructures grown by molecular beam epitaxy

Nominally undoped Al_xGa_1–xAs grown by molecular beam epitaxy from As₄ species at elevated substrate temperatures of 670°C exhibits well-resolved excitonic fine structure in the low-temperature photoluminescence spectra, if the effective As-to-(Al+Ga) flux ratio on the growth surface is kept within a rather narrow range of clearly As-stabilized conditions. In contrast to previous results on Al_xGa_1–xAs of composition 0.15not to shift in energy by changing the excitation intensity. This implies a simple freeelectron carbon-acceptor recombination mechanism for the line without any participation of a donor. In Al_xGa_1–xAs of composition close to the direct-to-indirect cross-over point, two distinct LO-phonons separated by 34 and 48 meV from the (D ⁰,C ⁰) peak position at x=0.43 were observed which were before only detectable by Raman scattering experiments. The intensity of the carbon-impurity related luminescence lines in bulk-type Al_xGa_1–xAs and GaAs layers was found to be strongly reduced, as compared to the excitonic recombination lines, if the respective active layer was covered by a very thin confinement layer of either GaAs on top of Al_xGa_1–xAs or vice versa grown in the same growth cycle.     

Elektronen-Spin-Resonanz an (La1??xGdyCex)Al2

In the EPR of (La_1––x Gd _y Ce _x )Al₂ a bottleneck in the relaxation of the conduction electrons to the lattice is present at sufficiently high Gd-concentrations. The bottleneck can be broken by decreasing the Gd-concentration or by adding Cerium as a spin-flip-scatterer.g-factor and line broadening are measured for (La_1–y Gd _y )Al₂ and (La_1––x Gd _y Ce _x )Al₂ as a function of temperature and Gd- and Ce-concentrations. The Cerium induced relaxationsrate _eL (Ce) increases linearly with Ce-concentration up tox0.025. This corresponds to the fact, well known by measurements of the Kondo anomalies, that Cerium impurities show no significant interaction up to rather high concentrations.     

Influence of internal degrees of freedom on the structure of one-dimensional systems

Summary The influence of internal degrees of freedom on the behaviour of one-dimensional systems is discussed. For systems with half-filled bands the coupling to internalviz. lattice coordinates decides whether Peierls distortion is caused by intramonomer coordinates or by a lattice coordinate. Thereby the various intramonomer degrees of freedom act cooperatively. We show that there is a small regime of parameters where both kinds of distortion exist simultaneously. For increasing temperature we find that distortions can also move from the lattice coordinate to the intramonomer coordinate.     

Solution of monotone complementarity problems with locally Lipschitzian functions

The paper deals with complementarity problems CP(F), where the underlying functionF is assumed to be locally Lipschitzian. Based on a special equivalent reformulation of CP(F) as a system of equationsφ(x)=0 or as the problem of minimizing the merit functionΘ=1/2∥Φ∥ ₂ ² , we extend results which hold for sufficiently smooth functionsF to the nonsmooth case. In particular, ifF is monotone in a neighbourhood ofx, it is proved that 0 εδθ(x) is necessary and sufficient forx to be a solution of CP(F). Moreover, for monotone functionsF, a simple derivative-free algorithm that reducesΘ is shown to possess global convergence properties. Finally, the local behaviour of a generalized Newton method is analyzed. To this end, the result by Mifflin that the composition of semismooth functions is again semismooth is extended top-order semismooth functions. Under a suitable regularity condition and ifF isp-order semismooth the generalized Newton method is shown to be locally well defined and superlinearly convergent with the order of 1+p.     

In situ characterization of MBE grown GaAs and Al x Ga1−x As films using RHEED,SIMS, and AES techniques

A combination of the surface diagnostic techniques Auger electron spectroscopy (AES), reflection high energy electron diffraction (RHEED), and secondary ion mass spectroscopy (SIMS) was used in order to get more detailed information on basic processes which lead to the formation of high quality monocrystalline GaAs and Al _x Ga_1−x As films by molecular beam epitaxy (MBE) under ultra-high vacuum conditions. The formation and changes of reconstructed surface structures on (100) GaAs as a function of growth parameters were observedduring growth by RHEED. AES was used to determine the relative ratio of Ga/As on the surface for different reconstructed structures, to investigate the impurity contamination on substrate surfaces and grown films, and to study the surface segregation of Sn in MBE GaAs during doping. Finally, intentional and unintentional impurities incorporated during the growth of GaAs and Al _x Ga_1−x As by MBE were detected by the SIMS technique immediately after growth within the reaction chamber.