Calculation of the Electron Efficiency for a Two-Cavity Gyroklystron Amplifier by Using a Self-Consistent Code

The beam-wave interaction in a Ka-band, two-cavity fundamental gyroklystron amplifier is studied by using a self-consistent nonlinear simulation code. The electron efficiency for this gyroklystron amplifier is calculated, and the effect of various parameters, such as beam voltage, beam current, electron guiding center radius, velocity pitch ratio and drift tube length on the electron efficiency is discussed in detail.     

生活中的物理知识

日常生活中有许多家用电器与我们学习的知识有着密切关系，可是当学生遇到此类问题时，就不能正确解答因此在教学中应注意，利用生活中的实物分析物理问题会收到良好的效果。     

同心度对杆箍缩二极管物理特性的影响

闪光X射线照相是获得高凝聚态物质内部物理图像的重要手段,阳极杆箍缩二极管是X射线源的重要组成部分之一,其设计直接影响X射线源稳定性。由于受装置结构及真空等因素的影响,使得阴阳极几何中心同心存在一定的困难。因此,评估同心偏差对二极管物理特性的影响,对提高闪光X射线源稳定性具有重要的意义。针对阴阳极几何中心同心偏差问题开展实验研究,分别取三种同心偏差度(小于1%,15.02%和22.92%)状态。在1 MV电压下获得了不同同心偏差度下二极管电参数特性,并在此基础上结合理论模型分析了同心偏差度对二极管物理特性及电极等离子体扩散速度的影响。研究结果表明,随着同心偏差度增加,磁绝缘阶段阻抗下降率及等离子体扩散速度呈非线性增加,同时造成该阶段二极管阻抗与脉冲驱动源输出阻抗失配严重,降低了二极管与脉冲驱动源的能量耦合效率。     

Si掺杂Ag基超分辨薄膜读出性能研究

超分辨薄膜是一种能够实现突破光学衍射极限的功能薄膜,它在超分辨近场光存储技术中起到至关重要的作用。采用磁控溅射共溅的方式制备了Ag掺杂一定量Si的超分辨复合薄膜,测试了其作为掩膜层的超分辨光盘读出性能,并获得了最佳的薄膜制备条件,即当Ag溅射功率为55 W,Si为95 W,溅射时间为80s,薄膜厚度为39nm时,超分辨光盘的读出信号载噪比(CNR)最高为28dB。用X射线光电子能谱测量了上述薄膜的组成,用扫描电子显微镜观察了薄膜微区形貌,并用椭圆偏振光谱仪测量了薄膜的光学常数和厚度。超分辨复合薄膜的读出机理可以用Ag的散射型机理解释。光盘在持续读出10万次以后读出信号基本没有下降。     

基于FPGA技术的混沌加密系统研究

提出了一种基于混沌加密算法和传统加密算法的混沌加密系统, 并采用FPGA技术进行了硬件开发. 根据离散化和数字化技术, 将Henon映射和Logistic映射作离散化处理, 采用Verilog HDL语言和FPGA技术产生迭代序列, 结合传统加密算法, 基于Xilinx的FPGA开发平台进行了硬件实验研究, 并给出了该系统通过互联网上实现了文件加密和解密的通信实验, 结果显示具有网络通信的应用潜力.     

QCW diode-pumped 654 W AO Q-switched Nd:YAG rod oscillator-amplifier laser

A diode laser-pumped acoustic-optic Q-switched Nd:YAG master-oscillator power amplifier laser is presented. The laser is quasi continuously pumped at 1.1 kHz with a pulse width of 172 μs, and the ultrasonic frequency of the AO Q-switcher is set at a higher value (53 kHz). The master oscillator is designed as a thermally near-unstable-resonator, which presents an average output power of 48 W with a beam quality value of M² = 1.41 and a Q-switching pulse duration of 121 ns. The maximum average power of the MOPA system is 654 W, and the beam quality is M² = 6.     

Effect of bias condition on heavy ion radiation in bipolar junction transistor

The characteristic degradations in silicon NPN bipolar junction transistor (BJT) of 3DG142 type are examined under the irradiation with 40-MeV chlorine (Cl) ions under forward, grounded, and reverse bias conditions, respectively. Different electrical parameters are in-situ measured during the exposure under each bias condition. From the experimental data, larger variation of base current (I_B) is observed after irradiation at a given value of base-emitter voltage (V_BE), while the collector current is slightly affected by irradiation at a given V_BE. The gain degradation is affected mostly by the behaviour of the base current. From the experimental data, the variation of current gain in the case of forward bias is much smaller than that in the other conditions. Moreover, for 3DG142 BJT, the current gain degradation in the case of reverse bias is more severe than that in the grounded case at low fluence, while at high fluence, the gain degradation in the reverse bias case becomes smaller than that in the grounded case.     

微弱电流高精度自动测量系统

为了实现辐射探测中对微弱电流信号的实时准确测量,设计了一套微弱电流测量系统。介绍了系统的工作原理,及I-V转换和放大单元的低噪声抗干扰设计、-△模数转换技术和单片机程序的设计。系统通过USB与计算机进行通信,计算机应用软件可以完成采集频率和量程控制、数据处理、显示和存储等功能。经过验证,该系统能满足10-13~10-3 A的大动态微弱电流测量,分辨力为四位半, 能自动量程判断,具有较高的精度和稳定性,已成功应用于辐射探测实验。     

A facile method to synthesize nitrogen and fluorine co-doped TiO2 nanoparticles by pyrolysis of (NH4)2TiF6

The nitrogen and fluorine co-doped TiO₂ (N-F-TiO₂) nanoparticles of anatase crystalline structure were prepared by a facile method of (NH₄)₂TiF₆ pyrolysis, and characterized by thermogravimetry-differential thermal analysis (TG-DTA), X-ray diffraction (XRD), transmission electron microscopy (TEM), X-ray photoelectron spectroscopy (XPS), and ultraviolet visible (UV-Vis) spectroscopy etc. With the increase of calcination temperature, (NH₄)₂TiF₆ decomposed into TiOF₂ and NH₄TiOF₃ at first, and then formed anatase-type TiO₂ with thin sheet morphology. H₃BO₃ as oxygen source can promote the formation of anatase TiO₂, but decrease the F content in the N-F-TiO₂ materials due to the formation of volatile BF₃ during the precursor decomposition. The photocatalytic activity of the obtained N-F-TiO₂ samples was evaluated by the methylene blue degradation under visible light, and all the samples exhibited much higher photocatalytic activity than P25. Moreover, the merits and disadvantages of this proposed method to prepare doped TiO₂ are discussed.