Mössbauer, X-ray, electrical and magnetic properties of lithium borosilicate glasses containing iron and manganese Part I. Mössbauer measurements

The effect of the replacement of MnO₂ by Fe₂O₃ on the oxidation states of iron in some lithium borosilicate glasses were studied using Mössbauer spectroscopy. DTA and infrared measurements showed the presence of two glassy phases, one of them containing iron and the other manganese. The Mössbauer spectra were measured at room temperature for all the glass samples. The spectra revealed the presence of Fe ions only in ferric state in both tetrahedral and octahedral coordination. Also, it was observed that the ratio between the number of iron ions in both coordination states has not changed with the increase of MnO₂ content.     

Resonance enhancement of diffuse scattering of x-rays in a waveguide heterostructure

The diffuse scattering of x rays in a four-layer waveguide-type heterostructure is investigated. The dynamic enhancement of diffuse scattering is detected experimentally in regions corresponding to the excitation of waveguide modes for both the incident and scattered waves. Pis’ma Zh. éksp. Teor. Fiz. 66, No. 4, 219–223 (25 August 1997)     

High power CW solid-state multilaser system

A laser system containing four CW Nd:YAG double-rod lasers, transforming optics and a fibre with input-output optics has been designed and investigated. It is shown that reduction of the beam parameter product of the non-Gaussian beams in the image space of the lens has made it possible to collect the emission of four lasers to the same fibre. Independent laser operation has provided the output power control in the range of 10–900 W with a stable light spot size on the input end of the fibre.     

Investigation of acceptor centers in semiconductors with the diamond crystal structure by the μ − SR method

The residual polarization of negative muons in crystal silicon samples with phosphorus (P: 1.6×10¹³ cm⁻³) and antimony (Sb: 2×10¹⁸ cm⁻³) impurities is investigated. The measurements are made in a 1000 G magnetic field oriented in a direction transverse to the muon spin in the temperature range 4–300 K. The relaxation rate and shift of the precession frequency in the silicon sample with the phosphorus impurity are measured more accurately than previously. It is found that in antimony-doped silicon the acceptor center _μ A1 at temperatures below 30 K can be in both ionized and neutral states. The experimental data are interpreted on the basis of spin-lattice relaxation of the magnetic moment of an acceptor center, formation of acceptor-donor pairs, and recombination of charge carriers at the acceptor. Preliminary measurements showed a nonzero residual polarization of negative muons in germanium. Pis’ma Zh. éksp. Teor. Fiz. 68, No. 1, 61–66 (10 July 1998)     

The electronic spectrum of a three-dimensional quasicrystal

The electronic spectrum of an icosahedral quasicrystal with a central-atom decoration of the Amman-Mackay network is investigated in the tight-binding approximation. The quasicrystal is described as a structural limit of the optimal cubic approximants with increasing period. The electronic spectra for the first four optimal cubic approximants do not contain the hierarchical gap structure which is typical for the Cantor set of the spectrum of a one-dimensional quasicrystal. At the same time, as the order of the approximant increases, the spectrum becomes singular throughout the entire energy scale. Pis’ma Zh. éksp. Teor. Fiz. 67, No. 8, 557–562 (25 April 1998) Published in English in the original Russian journal. Edited by Steve Torstveit.     

Galactic anisotropy as signature of “top-down” mechanisms of ultrahigh-energy cosmic rays

We show that “top-down” mechanisms of ultrahigh-energy cosmic rays which involve heavy relic particle-like objects predict a Galactic anisotropy of the highest-energy cosmic rays at the level of minimum ∼ 20%. This anisotropy is large enough to be either observed or ruled out in the next generation of experiments. Pis’ma Zh. éksp. Teor. Fiz. 68, No. 2, 99–103 (25 July 1998) Published in English in the original Russian journal. Edited by Steve Torstveit.     

Effect of a magnetic field on thermally activated tunneling ionization of impurity centers in semiconductors

An expression for the probability of thermally activated tunneling ionization in an electric field in the presence of a magnetic field is obtained. It is shown that the logarithm of the ionization probability is proportional to the squared electric field, and the coefficient of proportionality decreases with increasing magnetic field. Pis’ma Zh. éksp. Teor. Fiz. 68, No. 10, 763–767 (25 November 1998)