Effect of microstructure on thermoelectric properties of CSD-grown Bi2Sr2Co2Oy thin films

Three Bi₂Sr₂Co₂O_y thin films with different microstructures have been prepared by chemical solution deposition on LaAlO₃(001) through varying the annealing temperature. With the decrease in the annealing temperature, both the size and c-axis alignment degree of grains in the film decrease as well, leading to an increase in the film resistivity. In addition, the decrease in the annealing temperature also results in a slight increase in the seebeck coefficient due to the enhanced energy filtering effect of small-grain film. The nanostructured Bi₂Sr₂Co₂O_y film with the average grain size of about 100 nm shows a power factor comparable to that of the films with larger grains. Since the thermal conductivity of the nanostrcutured films can be depressed due to the enhanced phonon scattering by grain boundary, a higher figure of merit is expected in Bi₂Sr₂Co₂O_y thin film with grains in nanometer size.     

An AlGaN/GaN HEMT with reduced surface electric field and improved breakdown voltage

A reduced surface electric field in AlGaN/GaN high electron mobility transistor (HEMT) is investigated by employing a localized Mg-doped layer under the two-dimensional electron gas (2-DEG) channel as an electric field shaping layer. The electric field strength around the gate edge is effectively relieved and the surface electric field is distributed evenly as compared with those of HEMTs with conventional source-connected field plate and double field plate structures with the same device physical dimensions. Compared with the HEMTs with conventional source-connected field plate and double field plate, the HEMT with Mg-doped layer also shows that the breakdown location shifts from the surface of the gate edge to the bulk Mg-doped layer edge. By optimizing both the length of Mg-doped layer, L_m, and the doping concentration, a 5.5 times and 3 times the reduction in the peak electric field near the drain side gate edge is observed as compared with those of the HEMTs with source-connected field plate structure and double field plate structure, respectively. In a device with V_GS=-5 V, L_m=1.5 μm, a peak Mg doping concentration of 8× 10¹⁷ cm^-3 and a drift region length of 10 μm, the breakdown voltage is observed to increase from 560 V in a conventional device without field plate structure to over 900 V without any area overhead penalty.     

KBiMS4 (M=Si, Ge): Synthesis, structure, and electronic structure

Two new bismuth sulfides KBiSiS₄ and KBiGeS₄ have been synthesized by means of the reactive flux method. They adopt the RbBiSiS₄ structure type and crystallize in space group P2₁/c of the monoclinic system. The structure consists of (M=Si, Ge) layers separated by bicapped trigonal-prismatically coordinated K atoms. The M atom is tetrahedrally coordinated to four S atoms and the Bi atom is coordinated to a distorted monocapped trigonal prism of seven S atoms. The optical band gap of 2.25(2) eV for KBiSiS₄ was deduced from the diffuse reflectance spectrum. From a band structure calculation, the optical absorption for KBiSiS₄ originates from the layer. The Si 3p orbitals, Bi 6p orbitals, and S 3p orbitals are highly hybridized near the Fermi level. The orbitals of K have no contributions on both the upper of valence band and the bottom of conduction band.     

Wrinkle engineering: a new approach to massive graphene nanoribbon arrays

Wrinkles are often formed on CVD-graphene in an uncontrollable way. By designing the surface morphology of growth substrate together with a suitable transfer technique, we are able to engineer the dimension, density, and orientation of wrinkles on transferred CVD-graphene. Such kind of wrinkle engineering is employed to fabricate highly aligned graphene nanoribbon (GNR) arrays by self-masked plasma-etching. Strictly consistent with the designed wrinkles, the density of GNR arrays varied from ～0.5 to 5 GNRs/μm, and over 88% GNRs are less than 10 nm in width. Electrical transport measurements of these GNR-based FETs exhibit an on/off ratio of ～30, suggesting an opened bandgap. Our wrinkle engineering approach allows very easily for a massive production of GNR arrays with bandgap-required widths, which opens a practical pathway for large-scale integrated graphene devices.     

Electrical and thermal transport properties of CdO ceramics

High temperature electrical and thermal transport properties, that is, electrical conductivity, Seebeck coefficient and thermal conductivity, of CdO ceramics have been investigated. Because of the good electrical properties and low thermal conductivity, the dimensionless figure-of-merit ZT of the CdO ceramics reaches 0.34 at 1023 K. This value is comparable to the best reported ZT for the n-type oxide ceramic thermoelectric materials and remains as potential to be further improved by porosity controlling or nanostructuring.     

Chow’s Theorem for Semi-abelian Varieties and Bounds for Splitting Fields of Algebraic Tori

A theorem of Chow concerns homomorphisms of two abelian varieties under a primary field extension base change. In this paper, we generalize Chow's theorem to semi-abelian varieties. This contributes to different proofs of a well-known result that every algebraic torus splits over a finite separable field extension. We also obtain the best bound for the degrees of splitting fields of tori.     

粘性可压混合层时间稳定性对称紧致差分求解

基于可压扰动方程组的一阶改型 ,将高精度对称紧致格式引入边值法数值线性稳定性分析。对所获非线性离散特征值问题给出了一个通用形式二阶迭代局部算法 ,实现了时间模式和空间模式的统一求解 ,并将扰动特征值及其特征函数同时得到。据此分析了可压平面自由混合层时间稳定性 ,涉及二维 /三维扰动波、粘性 /无粘扰动波、第一 /第二模态、特征函数、伪特征值谱等。研究表明 ,压缩性效应和粘性效应对最不稳定扰动波数和增长率呈相似的减抑作用 ;在 Mc=1附近 ,从高波数段开始 ,粘性效应可强化二维不稳定扰动波由第一模态向第二模态的过渡     

位移和速度反馈的数学模型及实现方法

本文提出了位移和速度同时反馈的数学模型 .并给出了位移和速度反馈的实现方法 ,该方法用传统的差动变压器实现了位移和速度的同时反馈     

LD泵浦固体激光器基模振荡光的场分布噪音

通过调整泵浦光直径,使得LD端面泵浦固体激光器的振荡光工作于基模.在排除高阶横模的条件下,测量了由于热透镜的不稳定引起的光场场分布的噪音.实验发现,基模振荡光的高斯半径、光束指向角都在波动,而且光斑存在畸变波动.对一个未采取抑制措施的2W连续LD端面泵浦Nd:YAG固体激光器进行了测量.结果表明,在总功率不变的情况下,激光束峰值点附近的光强波动达到6.3%;激光的高斯半径波动达到5.8%;激光的指向角波动达到0.3mrad.