Stage-I fatigue crack studies in order to validate the dislocation-free zone model of fracture for bulk materials

Stage-I fatigue cracks are commonly described by the model of Bilby, Cottrell and Swinden (BCS model). However, since several experimental investigations have shown a dislocation-free zone (DFZ) in front of crack-tips, it is necessary to validate the new DFZ model and to examine the deviations to the BCS model. Therefore, the dislocation density distribution is derived from height profiles of slip lines in front of stage-I fatigue cracks in CMSX4® single crystals measured by contact-mode atomic force microscopy. This is possible, because the cracks are initiated at notches milled by focused ion beam technique directly on slip planes with a high Schmid factor. Consequently, the directions of the Burgers vectors are well known; it is possible to calculate the dislocation density distributions from the height profiles. The measured distributions are compared to the calculated distribution function of the DFZ model proposed by Chang et al. The additionally measured microscopic friction stress of the dislocations is then used to calculate the influence of grain boundaries on the dislocation density distribution in front of stage-I cracks. The calculation is done by the extended DFZ model of Shiue et al. and compared with the measured distribution function in polycrystalline specimens. Finally, the crack-tip sliding displacement as a measure for the crack propagation rate is compared for the DFZ model and the BCS model with the experimentally revealed values. The important result: the often used BCS model does not reflect the experimental measurements. On the contrary, the DFZ model reflects the measurements at stage-I cracks qualitatively and quantitatively.     

Soft X-ray emission and the local densities of states of the Cu x Rh1−x alloy system

Soft X-ray emission experiments on Cu _x Rh_1–x alloys for the compositionsx=0.0, 0.05, 0.10, 0.80 and 1.0, have been performed. In this paper we present the spectra of Cu-and Rh-L _III core level-conduction band transitions. Using the data of recent self-consistent KKR-CPA electronic structure calculations we evaluate the corresponding SXS-cross sections and compare these theoretical results to our measurements.     

Neutron depolarisation imaging: Stress measurements by magnetostriction effects in Ni foils

In this article we present first proof-of-principle neutron depolarization imaging measurements on Ni foils under mechanical stress. The magnetostrictive effect in Ni leads to a reorientation of the magnetic domains in the material depending on the applied force. This in turn leads to a change of the depolarization a neutron beam suffers from transmission of the sample. We propose to use this method as a new technique for the spatially resolved measurement of mechanical stress.     

Influence of ion bombardment on growth and properties of PLD created DLC films

A hybrid PLD system with ion bombardment of films was developed. Growing DLC films were modified during the laser deposition (10 J?cm^?2) by argon ions with energy in the range from 40 eV to 210 eV and cathode current of 0.15 A and 0.5 A. The content of sp² “graphitic” and sp³ “diamond” bonds was measured using XPS. Sp³ bonds changed from 60 % to 81 %. We found the highest sp³ content for energy of 40 eV. Hardness (and reduced Young’s modulus) were determined by nanoindentation and reached 49 GPa (277 GPa). Film adhesion was studied using the scratch test and was up to 14 N for titanium substrates. Relations among deposition conditions and measured properties are presented.     

Hypernuclear fine structure in (9)(lambda)Be

With a germanium detector array (Hyperball), we observed two gamma-ray peaks corresponding to the two transitions (5/2(+)-->1/2(+) and 3/2(+)-->1/2(+)) in the (9)(Lambda)Be hypernucleus which was produced by the 9Be(K-,pi(-)) reaction. The energies of the gamma rays are 3029 +/- 2 +/- 1 keV and 3060 +/- 2 +/- 1 keV. The energy difference was measured to be 31.4(+2.5)(-3.6) keV, which indicates a very small Lambda-spin-dependent spin-orbit force between a Lambda and a nucleon. This is the smallest level splitting by far ever measured in a hypernucleus.     

Near- and mid-infrared laser-optical sensors for gas analysis

Semiconductor diode lasers were first developed in the mid-1960s and found immediate application as much needed tunable sources for high-resolution laser spectroscopy commonly referred to as tunable diode laser absorption spectroscopy (TDLAS). In this paper, currently available semiconductor lasers for spectroscopy in the near- and mid-infrared spectral region based upon gallium arsenide, indium phosphite, antimonides and lead-salt containing compounds will be reviewed together with the main features of TDLAS. Room-temperature measurements of atmospheric carbon dioxide near 2 μm will be discussed and recent results obtained with a fast chemical sensor for methane flux measurements based on lead-salt diode lasers operating near 7.8 μm will be presented.     

Magnetic Properties of Nanoparticles of Antiferromagnetic Materials

Hyperfine Interactions - The magnetic properties of antiferromagnetic nanoparticles have been studied by Mössbauer spectroscopy and neutron scattering. Temperature series of Mössbauer...     

Investigations of Solid State Dynamics at the NRSSR Beamline at PETRA II. An Overview

The present status of the new nuclear resonance beamline PETRA 1 at HASYLAB, DESY, Hamburg is described. Besides an overview of the experimental setup some examples of recent experiments are given. Those cover the main applications, i.e., inelastic scattering from iron alloys and quasielastic scattering from glass-forming liquids. This revised version was published online in August 2006 with corrections to the Cover Date.     

Electroluminescence of silicon nanocrystals in MOS structures

We have studied the structural, electrical and optical properties of MOS devices, where the dielectric layer consists of a substoichiometric SiO_x (x<2) thin film deposited by plasma-enhanced chemical vapor deposition. After deposition the samples were annealed at high temperature (>1000 °C) to induce the separation of the Si and the SiO₂ phases with the formation of Si nanocrystals embedded in the insulating matrix. We observed at room temperature a quite intense electroluminescence (EL) signal with a peak at ∼850 nm. The EL peak position is very similar to that observed in photoluminescence in the very same device, demonstrating that the observed EL is due to electron–hole recombination in the Si nanocrystals and not to defects. The effects of the Si concentration in the SiO_x layer and of the annealing temperature on the electrical and optical properties of these devices are also reported and discussed. In particular, it is shown that by increasing the Si content in the SiO_x layer the operating voltage of the device decreases and the total efficiency of emission increases. These data are reported and their implications discussed. Received: 31 August 2001 / Accepted: 3 September 2001 / Published online: 17 October 2001