Anordnungsräume unter der Moulton Konstruktion und Ebenen der Lenz Klasse III

As we have shown in [27] there do exist projective planes of Lenz-Class III which are not isomorphic to any (generalized) Moulton plane. We will go into some detail concerning the construction of these planes, present a wide variety of non-Moulton planes of Class III.1 and III.2, and determine their spaces of orderings. In particular, for any two-power z, we construct a Cartesian group C which satisfies Yaqub's criterion and whose distrubutor has index z in the multiplicative loop of C.     

Quenched asymptotics of the ground state energy of random Schrödinger operators with scaled Gibbsian potentials

 This article describes the almost sure infinite volume asymptotics of the ground state energy of random Schr?dinger operators with scaled Gibbsian potentials. The random potential is obtained by distributing soft obstacles according to an infinite volume grand canonical tempered Gibbs measure with a superstable pair interaction. There is no restriction on the strength of the pair interaction: it may be taken, e.g., at a critical point. The potential is scaled with the box size in a critical way, i.e. the scale is determined by the typical size of large deviations in the Gibbsian cloud. The almost sure infinite volume asymptotics of the ground state energy is described in terms of two equivalent deterministic variational principles involving only thermodynamic quantities. The qualitative behaviour of the ground state energy asymptotics is analysed: Depending on the dimension and on the H?lder exponents of the free energy density, it is identified which cases lead to a phase transition of the asymptotic behaviour of the ground state energy. Received: 24 June 2002 / Revised version: 17 February 2003 Published online: 12 May 2003 Mathematics Subject Classification (2000): Primary 82B44; Secondary 60K35 Key words or phrases: Gibbs measure – H?lder exponents – Random Schr?dinger operator – Ground state – Large deviations     

Upper limit for thermal direct photon production in heavy-ion collisions at 60 and 200A·GeV

The production of direct photons has been investigated in reactions ofp and¹⁶O projectiles at 60 and 200A·GeV with C and Au nuclei. Photon and ⁰ spectra have been measured in the pseudorapidity range 1.52.1 for the transverse momentum region 0.4 GeV/cp _T 2.8 GeV/c employing the lead-glass spectrometer SAPHIR. An upper limit of 15% at the 90% confidence level for the direct photon signal relative to the neutral pion production is obtained from the comparison of measured photon spectra with Monte Carlo simulations of the hadronic background based on the reconstructed yield of ⁰ and mesons. Consequences for a possible phase transition to a quark-gluon plasma are discussed.     

Investigations of Solid State Dynamics at the NRSSR Beamline at PETRA II. An Overview

The present status of the new nuclear resonance beamline PETRA 1 at HASYLAB, DESY, Hamburg is described. Besides an overview of the experimental setup some examples of recent experiments are given. Those cover the main applications, i.e., inelastic scattering from iron alloys and quasielastic scattering from glass-forming liquids. This revised version was published online in August 2006 with corrections to the Cover Date.     

Electroluminescence of silicon nanocrystals in MOS structures

We have studied the structural, electrical and optical properties of MOS devices, where the dielectric layer consists of a substoichiometric SiO_x (x<2) thin film deposited by plasma-enhanced chemical vapor deposition. After deposition the samples were annealed at high temperature (>1000 °C) to induce the separation of the Si and the SiO₂ phases with the formation of Si nanocrystals embedded in the insulating matrix. We observed at room temperature a quite intense electroluminescence (EL) signal with a peak at ∼850 nm. The EL peak position is very similar to that observed in photoluminescence in the very same device, demonstrating that the observed EL is due to electron–hole recombination in the Si nanocrystals and not to defects. The effects of the Si concentration in the SiO_x layer and of the annealing temperature on the electrical and optical properties of these devices are also reported and discussed. In particular, it is shown that by increasing the Si content in the SiO_x layer the operating voltage of the device decreases and the total efficiency of emission increases. These data are reported and their implications discussed. Received: 31 August 2001 / Accepted: 3 September 2001 / Published online: 17 October 2001     

Near- and mid-infrared laser-optical sensors for gas analysis

Semiconductor diode lasers were first developed in the mid-1960s and found immediate application as much needed tunable sources for high-resolution laser spectroscopy commonly referred to as tunable diode laser absorption spectroscopy (TDLAS). In this paper, currently available semiconductor lasers for spectroscopy in the near- and mid-infrared spectral region based upon gallium arsenide, indium phosphite, antimonides and lead-salt containing compounds will be reviewed together with the main features of TDLAS. Room-temperature measurements of atmospheric carbon dioxide near 2 μm will be discussed and recent results obtained with a fast chemical sensor for methane flux measurements based on lead-salt diode lasers operating near 7.8 μm will be presented.     

Smectic phases in hard particle mixtures: Koda's theory

Mixtures of parallel linear particles and spheres tend to demix upon compression. The linear species usually concentrates in regular layers, thus forming a smectic phase. With increasing concentration of spheres this ‘smectic demixing’ transition occurs at ever lower packing densities. For the specific case of hard spherocylinders and spheres Koda et al. [T. Koda, M. Numajiri, S. Ikeda, J. Phys. Jap., 65, 3551 (1996)] have explained the layering effect in terms of a second virial approximation to the free energy. We extend this approach from spherocylinders to other linear particles, namely fused spheres, ellipsoids and sphero-ellipsoids.     

Transport properties of LaCu2Si2 and CeCu2Si2 between 1.5K and 300K

We report measurements of the electrical resistivity, the thermal conductivityk and the thermoelectric powerS between 1.5K and 300K on the anomalous CeCu₂Si₂ compound and on LaCu₂Si₂ as reference compound. For LaCu₂Si₂ the temperature dependences of andS are in accord with those found in otherd band metals. For CeCu₂Si₂ the observed resistivity (220 µ cm at 200K) leads to a very short electronic mean free path which is of the order of the Ce-Ce spacing. Correspondingly,k is almost identical with the phonon contributionk _p . Below 20K, resistivity and thermoelectric power strongly suggest Fermi liquid behavior with a degeneracy temperature between 20K and 40K. Above 200K, both andS decrease proportionally to –ln(T/1 K).Work performed within the research program of the Sonderforschungsbereich 125 Aachen/Jülich/KölnPart of this work will be presented at the Int. Conf. on Rare Earths in the Metallic State, St. Pierre de Chartreuse, Sept. 1978