Pseudoinstantons in Metric-Affine Field Theory

In abstract Yang–Mills theory the standard instanton construction relies on the Hodge star having real eigenvalues which makes it inapplicable in the Lorentzian case. We show that for the affine connection an instanton-type construction can be carried out in the Lorentzian setting. The Lorentzian analogue of an instanton is a spacetime whose connection is metric compatible and Riemann curvature irreducible (pseudoinstanton). We suggest a metric-affine action which is a natural generalization of the Yang–Mills action and for which pseudoinstantons are stationary points. We show that a spacetime with a Ricci flat Levi-Civita connection is a pseudoinstanton, so the vacuum Einstein equation is a special case of our theory. We also find another pseudoinstanton which is a wave of torsion in Minkowski space. Analysis of the latter solution indicates the possibility of using it as a model for the neutrino.     

Synthesis of polysubstituted 4-fluoroquinolinones

[reaction: see text] A convenient one-pot synthesis of 4-fluoroquinolinones that are active against KDR kinase is described. The mechanism of the reaction is believed to involve the formation of a quinone methide intermediate.     

Evidences of the origin of N2O in the high-temperature NH3 oxidation over Pt-Rh gauze

Transient isotopic experiments reveal that the mechanism of N2O formation in the high-temperature NH3 oxidation over Pt-Rh gauze involves the reaction of adsorbed ammonia intermediate species (NHx) and NO.     

Electronic absorption spectra of CCS and CCS in neon matrices

Mass selected C₂S⁻ ions have been co-deposited with neon to grow a matrix at 6 K. The and electronic absorption spectra of the linear CCS⁻ anion have been identified with origin band at 10 606 and 22 273 cm⁻¹, respectively. After exposure to UV radiation a new electronic transition of CCS is observed (origin band at 30 563 cm⁻¹) in addition to its known band system. Ab initio calculations provide support for the symmetry assignment of the upper electronic states of CCS⁻, CCS and of the vibrational structure in the spectra.     

Steam-activated FeMFI zeolites as highly efficient catalysts for propane and N2O valorisation via oxidative conversions

The reaction between C3H8 and N2O over steam-activated FeMFI zeolites leads to high yields towards propene (24%) and propionaldehyde (6%) at 773-798 K.     

On lovely pairs of geometric structures

We study the theory of lovely pairs of geometric structures, in particular o-minimal structures. We use the pairs to isolate a class of geometric structures called weakly locally modular which generalizes the class of linear structures in the settings of SU-rank one theories and o-minimal theories. For o-minimal theories, we use the Peterzil-Starchenko trichotomy theorem to characterize for a sufficiently general point, the local geometry around it in terms of the thorn U-rank of its type inside a lovely pair.     

Molecular dynamics simulation comparison of atomic scale intermixing at the amorphous Al2O3/semiconductor interface for a-Al2O3/Ge, a-Al2O3/InGaAs, and a-Al2O3/InAlAs/InGaAs

The structural properties of a-Al₂O₃/Ge, a-Al₂O₃/In_0.5Ga_0.5As and a-Al₂O₃/In_0.5Al_0.5As/InGaAs interfaces were investigated by density-functional theory (DFT) molecular dynamics (MD) simulations. Realistic a-Al₂O₃ samples were generated using a hybrid classical-DFT MD “melt and quench” approach. The interfaces were formed by annealing at 700 K/800 K and 1100 K with subsequent cooling and relaxation. The a-Al₂O₃/Ge interface demonstrates pronounced interface intermixing and interface bonding exclusively through Al–O–Ge bonds generating high interface polarity. In contrast, the a-Al₂O₃/InGaAs interface has no intermixing, Al–As and O–In/Ga bonding, low interface polarity due to nearly compensating interface dipoles, and low substrate deformation. The a-Al₂O₃/InAlAs interface demonstrated mild intermixing with some substrate Al atoms being adsorbed into the oxide, mixed Al–As/O and O–Al/In bonding, medium interface polarity, and medium substrate deformation. The simulated results demonstrate strong correlation to experimental measurements and illustrate the role of weak bonding in generating an unpinned interface for metal oxide/semiconductor interfaces.     

Theoretical analysis of initial adsorption of high-κ metal oxides on In(x)Ga(1-x)As(0 0 1)-(4×2) surfaces

Ordered, low coverage to monolayer, high-κ oxide adsorption on group III rich InAs(0 0 1)-(4×2) and In(0.53)Ga(0.47)As(0 0 1)-(4×2) was modeled via density functional theory (DFT). Initial adsorption of HfO(2) and ZrO(2) was found to remove dangling bonds on the clean surface. At full monolayer coverage, the oxide-semiconductor bonds restore the substrate surface atoms to a more bulklike bonding structure via covalent bonding, with the potential for an unpinned interface. DFT models of ordered HfO(2)/In(0.53)Ga(0.47)As(0 0 1)-(4×2) show it fully unpins the Fermi level.     

Atomic imaging of the monolayer nucleation and unpinning of a compound semiconductor surface during atomic layer deposition

The reaction of trimethyl aluminum on the group III rich reconstructions of InAs(0 0 1) and In(0.53)Ga(0.47)As(0?0?1) is observed with scanning tunneling microscopy/spectroscopy. At high coverage, a self-terminated ordered overlayer is observed that provides the monolayer nucleation density required for subnanometer thick transistor gate oxide scaling and removes the surface Fermi level pinning that is present on the clean InGaAs surface. Density functional theory simulations confirm that an adsorbate-induced reconstruction is the basis of the monolayer nucleation density and passivation.