The influence of substrate material and annealing procedure on the properties of superconducting thin films

Thin layers YBa₂Cu₃O_7–x. are deposited by a laser ablation technique using a pulsed excimer laser operating at 308 nm. The influence of the substrate material and the annealing procedure on the superconducting behaviour of the 123 film and the reactions between the film and the substrate are studied by resistance, X-ray patterns and TEM measurements. The best results are obtained for deposition on (100) SrTiO₃ substrates. The resistance of the 1 m thick film shows a metallic behaviour, an onset in superconductivity at a temperature of 90 K, and has zero resistance at 86 K. The 123 material has a preferential oriented c-axis perpendicular to the surface plane.     

Otpically illuminated dielectric interfaces as high-speed far-infrared modulators

A new device for the gigahertz modulation of far-infrared radiation is analytically and numerically analyzed. It consists of a thin layer of a high-mobility, direct-bandgap semiconductor, such as GaAs, in which a high-density electron-hole plasma is rapidly created and destroyed, thereby rapidly changing the free-carrier reflectivity of the active layer. Illumination by a high-power, near-infrared laser diode array generates the plasma through intrinsic photoconduction. It is shown that this device acis primarily as an amplitude modulator, and that its efficiency increases sharply with increasing far-IR frequency, in contrast to a Schottky diode, which acts primarily as a phase modulator, and whose efficiency falls off sharply with far-IR frequency. The breakeven frequency lies at about 1.5 THz, depending slightly on the assumed device parameters. The relative advantage of the new device increases rapidly with increasing far-infrared frequency. At an operating frequency of 2.5 THz (119 m), for example, a 1 GHz modulation bandwidth may be achieved with a single-sideband conversion loss of only-21 db, versus a Schottky's loss of-39 db, assuming a laser diode power of 1 W, which is readily available from recently developed laser diode arrays.     

Forward-backward multiplicity correlations in σ+ p,K + p andpp collisions at 250 GeV/c

Forward-backward multiplicity correlations in σ⁺,K ⁺ p andpp collisions at 250 GeV/c ( \(\sqrt s \) =22 GeV) are given for all charges and for the different charge combinations. The correlations are found to be caused predominantly by centrally produced particles. It is demonstrated that this result is an agreement with observations at the ISR and the CERNp \(\bar p\) -Collider. The results are compared to expectations from LUND, DPM and FRITIOF Monte Carlo models and a geometrical picture relating correlations in hadron-hadron collisions toe ⁺ e ^? data in terms of impact parameters is tested.     

Spatial fluctuations in reaction-limited aggregation

A general method is used for describing reaction-diffusion systems, namely van Kampen's method of compounding moments, to study the spatial fluctuations in reaction-limited aggregation processes. The general formalism used here and in subsequent publications is developed. Then a particular model is considered that is of special interest, since it describes the occurrence of a phase transition (gelation). The corresponding rate constants for the reaction between two clusters of sizei and sizej areK _ij=ij (i, j=1, 2,). For thediffusion constants D _j of clusters of sizej the following class of models is considered:D _j=D if 1Js andD _j=0 ifj>s. The casess= ands< are studied separately. For the models= the equal-time and the two-time correlation functions are calculated; this modelbreaks down at the gel point. The breakdown is characterized by a divergence of the density fluctuations, and is caused by the large mobility of large clusters. For all models withs< the density fluctuations remain finite att _c, and the equal-time correlation functions in the pre- and in the post-gel stage are calculated. Many explicit and asymptotic results are given. From the exact solution the upper critical dimension in this gelling model isd _c=2.     

A neutral gas model for electron swarms

A BGK-type Boltzmann equation for a neutral gas is considered as a model for electron swarms, because the gas and the electron Boltzmann equation have a common diffusion approximation. Both full- and half-range theory are developed using orthogonality methods of solution. Preliminary comparisons with diffusion theory are presented.