Erratum: Synthesis and characterization of diorganotin(IV) complexes of Schiff bases with ONO‐type donors and crystal structure of [N‐(2‐hydroxy‐4‐nitrophenyl)‐3‐ethoxysalicylideneiminato]diphenyltin(IV)

The article referenced above was first published online on 30 August 2007 with incorrect pagination; the pagination has now been corrected online and in print. Copyright © 2007 John Wiley & Sons, Ltd.     

The Transport Properties of the Cell Membrane Ion Channels in Electric Fields: Bethe Lattice Treatment

The interactive two-state model of cell membrane ion channels in an electric field is formulated on the Bethe lattice by means of the exact recursion relations. The probability of channel opening or maximum fractions of open potassium and sodium channels are obtained by solving a non-linear algebraic equation. Using known parameters for the conventional mean-field theory the model gives a good agreement with the experiment both at low and high trans-membrane potential values. For intermediate voltages, the numerical results imply that collective effects are introduced by trans-membrane voltage.     

Precision of a dual energy X-ray absorptiometry device

The standard method to diagnose and follow-up osteoporosis is the measurement of bone mineral density (BMD) using dual X-ray absorptiometry (DEXA). Manufacturers' manuals of DEXA devices state the intrascanner coefficient of variance is less than 0.01 g/cm². The aim of this study was to evaluate the in vivo coefficient of variance of a Lunar DPX scanner in male and female healthy adult subjects. Average BMD for females and males were 1.170±0.091 g/cm² and 1.272±0.115 g/cm², respectively. Monthly phantom measurements provided and controlled by the manufacturer were 1.243±0.008 g/cm² (range 1.222 to 1.257) and the coefficient of variance was 0.006. It is concluded that the in vivo coefficient of variance of DEXA devices can slightly be higher than that proposed by the manufacturer. This revised version was published online in August 2006 with corrections to the Cover Date.     

Some Further Properties of the Accelerated Kerr-Schild Metrics

We extend the previously found accelerated Kerr-Schild metrics for Einstein-Maxwell-null dust and Einstein-Born-Infeld-null dust equations to the cases including the cosmological constant. This way we obtain the generalization of the charged de Sitter metrics in static space-times. We also give a generalization of the zero acceleration limit of our previous Einstein-Maxwell and Einstein-Born-Infeld solutions.     

Bidendriform bialgebras, trees, and free quasi-symmetric functions

We introduce bidendriform bialgebras, which are bialgebras such that both product and coproduct can be split into two parts satisfying good compatibilities. For example, the Malvenuto-Reutenauer Hopf algebra and the non-commutative Connes-Kreimer Hopf algebras of planar decorated rooted trees are bidendriform bialgebras. We prove that all connected bidendriform bialgebras are generated by their primitive elements as a dendriform algebra (bidendriform Milnor-Moore theorem) and then is isomorphic to a Connes-Kreimer Hopf algebra. As a corollary, the Hopf algebra of Malvenuto-Reutenauer is isomorphic to the Connes-Kreimer Hopf algebra of planar rooted trees decorated by a certain set. We deduce that the Lie algebra of its primitive elements is free in characteristic zero (G. Duchamp, F. Hivert and J.-Y. Thibon conjecture).     

On Genuine Bernstein–Durrmeyer Operators

We continue the studies on the so–called genuine Bernstein–Durrmeyer operators U _n by establishing a recurrence formula for the moments and by investigating the semigroup T(t) approximated by U _n . Moreover, for sufficiently smooth functions the degree of this convergence is estimated. We also determine the eigenstructure of U _n , compute the moments of T(t) and establish asymptotic formulas. Received: January 26, 2007.     

Properties of (InGa)As/GaAs QW (λ ≈ 1.2 µm) facet-coated edge emitting diode laser

In this paper, we report on the design and optical properties of laser diodes with an emission wave-length of ～1170 nm based on an (InGa)As/GaAs double quantum well active layer. The back and front facet of the laser diodes were coated with SiO_x dielectric films that influence the output optical power by enhancing or lowering the facet reflectivity. The measurements show improvement of the facet-coated laser diode properties in the threshold-current-density reduction along with light output power enhancement. Furthermore, a narrow far field pattern and high side mode suppression have been observed.