Fundamentals of the direct measurement of sound intensity and practical applications

Sound intensity is a measure of the magnitude and direction of the flow of sound energy. Developments in sound intensity measurement capabilities in the last quarter century have occurred because of several reasons. The main ones include the derivation of the cross-spectral formulation for sound intensity and developments in digital signal processing. This paper begins with a brief historical introduction of sound intensity measurements. Then elementary theory for sound intensity is presented. A section on sound intensity measurements is then included. The next section of the paper discusses sources of measurement error; the major sources of error are described in some detail. The paper continues with a discussion of the main applications of sound intensity measurements: sound power determination, noise source identification, and transmission loss measurements. The paper concludes with a discussion of ISO and ANSI intensity related standards and relevant references.     

Elastic scattering of slow positrons on atoms

The results of calculations of the elastic scattering cross section of positrons on noble gas and alkali atoms are presented. The calculations are performed within the one-electron Hartree-Fock approximation with multielectron correlations in the so-called random phase approximation with exchange taken into account. Virtual positronium formation is taken into account and proved to be very important. Arguments are presented that the positron polarization potential is repulsive for alkali atoms. The results obtained are in a reasonable agreement with experiment and with some previously reported calculations.     

effect of surface modification on the properties of hydrogen-sensitive GaAs-based Schottky diodes

The surface of hydrogen-sensitive GaAs Schottky diodes is modified by nonpolishing etching and by producing quantum wells and quantum dots in the space-charge region of the semiconductor. The sensitivity to hydrogen is found to increase by a factor of 8–37 after the etching and by two or three orders of magnitude after the introduction of quantum wells and dots. It is shown that the increased sensitivity is associated with the lowering of the barrier at the Pd/GaAs interface, the retardation of hydrogen diffusion into GaAs due to the presence of strained quantum-size layers, and an increase in the recombination current. The presence of the recombination component is supported by luminescence from the quantum wells and quantum dots, as well as from the GaAs substrate. The etch composition is shown to be a decisive factor in raising the sensitivity.     

Pion mass splitting and phase structure in twisted mass QCD

In the framework of Wilson chiral perturbation theory [1], we study the effect induced by a twisted Wilson term, as it appears in twisted mass QCD [2] (with two degenerate quarks). In particular we consider the vacuum orientation and the pion masses. The computations are done to NLO both in the mass and in the lattice spacing (i.e. to O(a ²)). There are no restrictions on the relative size of lattice artifacts with respect to the physical mass, thus allowing, in principle, to bridge between the physical regime and the unphysical one, where lattice artifacts tend to dominate. The inclusion of O(a ²) lattice artifacts can account for the splitting of degeneracy of the three pion masses. Moreover O(a ²) terms are necessary to model non-trivial behaviors of the vacuum orientation such as possible Aoki phases. It turns out that these last two phenomena are determined by the same constant.Received: 21 July 2004, Published online: 1 October 2004     

Three terminals optoelectronics devices integrated into a silicon on silicon waveguide

In this paper we describe two different kind of optoelectronic devices both based on a three terminals active device and exploit the plasma dispersion effect to achieve the desired working. The first device exploits this effect in order to obtain an optical modulation. The second device is an optoelectronic router based on the mode-mixing principle together with the injection-induced optical phase shift. Both devices are integrated into a Silicon on Silicon optical channel waveguide which can be realized using a standard bipolar process. The possibility of using standard, well-known technology presents several advantages with respect to III–V Optoelectronics. The active three terminal device used is a Bipolar Mode Field Effect Transistor (BMFET). Numerical simulation results are presented on both devices.     

Radiative lifetimes in Ce I and Ce II

New radiative lifetime measurements based on time-resolved laser-induced fluorescence techniques are reported for 18 even-parity levels belonging to the 4f5d^26p and 4f ²5d ² configurations of Ce I and 6 even-parity levels belonging to the 5d^26s, 4f5d6p, and 4f6s6p configurations of Ce II. Free neutral and singly ionized cerium atoms were produced by laser ablation. The Ce I and Ce II levels range in energy from 26 545 to 29 102 cm^-1, and 42 573 to 48 152 cm^-1, respectively. Received 25 September 2002 Published online 4 March 2003     

Modelling and design of a travelling-wave electro-optic modulator on InP

Based on a rigorous vectorial analysis, a fast travelling-wave Mach–Zehnder modulator is modelled and designed. The cross-section of the semiconductor layer stack and the lossy electrodes are carefully modelled using the method of lines in order to investigate propagation characteristics, velocity and losses. This yields an accurate microwave and optical field distribution to explain the behaviour of the component. In order to enhance the modulation efficiency, design curves are derived and the cross-sectional dimensions for minimum microwave loss are determined. The loss of the optimized modulator agrees very well with small-signal measurements up to 40 GHz and HFSS simulations. The layerstack of the fabricated device is suitable for integration with InP multi-wavelength lasers.