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131.
A systematic study of the upper semicontinuity and the lower semicontinuity of the solution map in parametric affine variational inequalities is given in this paper. Several examples are constructed to analyze the results. This work was supported by Korea Research Foundation Grant (KRF 2001-015-DP0049), the APEC Postdoctoral Fellowships Program, and the KOSEF Brain Pool Program.  相似文献   
132.
在人泡沫病毒原病毒全长克隆pHRSV13的基础上,缺失突变gag和pol基因,并且用SV40polyA加尾信号替代人泡沫病毒的3′LTR,构建辅助质粒pΔGP.将复制缺陷型人泡沫病毒载体质粒pGPSNI EGFP和辅助质粒pΔGP分别转染和共转染小肠癌HIC细胞系,荧光显微镜检测发现共转染pGPSNI EGFP和pΔGP的HIC细胞能够强烈表达绿色荧光蛋白,转染有复制缺陷型人泡沫病毒载体质粒pGPSNI EGFP的HIC细胞能够表达少量的绿色荧光蛋白,而转染有辅助载体pΔGP的HIC细胞不表达绿色荧光.结果证明复制缺陷型人泡沫病毒载体的构建成功,表明人泡沫病毒env基因3′端的内部启动子IP具有弱启动子的活性,并且bel基因产生的调控蛋白能够反式激活人泡沫病毒内部启动子IP和5′LTR的启动子.  相似文献   
133.
134.
The mathematical model for predicting the precision, limit of detection (LOD) and range of quantitation (ROQ) in a competitive enzyme-linked immunosorbent assay (ELISA) proposed by Hayashi et al. (Anal. Chem., 2004, 76, 1295) was validated. The model describes the relative standard deviation (RSD) of concentration estimates by the RSDs of pipetting volumes of analyte, enzyme-conjugated antigen, antibody and substrate solutions, and the standard deviation (SD) of inherent absorbances between the wells in an ELISA plate. For 6 kinds of direct competitive ELISA kits, the LOD and ROQ predicted by the model agreed well with those obtained by experiments with real samples. It was also confirmed that the model is applicable to the prediction of uncertainty that depends on the pipetting error of the viscous antiserum solution. The model was demonstrated to be useful for estimating the LOD and ROQ of competitive ELISA.  相似文献   
135.
在3?3?.4MeV/u 17N束轰击197Au靶产生的反应中,利用放置于不同角度组合的17个中子探测器(4°—83°)和14个半导体望远镜(2.3°—9.0°)对反应产物碎片与中子进行了符合测量.经对所得实验角分布积分得到Z=3—6元素的同位素产额分布.在参加者-旁观者模型框架下,采用17N原子核内部的不同密度分布计算了同位素产额分布并与实验数据做比较.  相似文献   
136.
A series of Zr-Si-N composite films with different Si contents were synthesized in an Ar and N2 mixture atmosphere by the bi-target reactive magnetron sputtering method. These films’ composition, microstructure and mechanical properties were characterized by energy dispersive spectroscopy, X-ray diffraction, scanning electron microscopy, atomic force microscopy and nanoindentation. Experimental results revealed that after the addition of silicon, Si3N4 interfacial phase formed on the surface of ZrN grains and prevented them from growing up. Zr-Si-N composite films were strengthened at low Si content with the hardness and elastic modulus reaching their maximum values of 29.8 and 352 GPa at 6.2 at% Si, respectively. With a further increase of Si content, the crystalline Zr-Si-N films gradually transformed into amorphous, accompanied with a remarkable fall of films’ mechanical properties. This limited enhancement of mechanical properties in the Zr-Si-N films may be due to the low wettability of Si3N4 on the surface of ZrN grains.  相似文献   
137.
We prove that the bounded complex of an affine oriented matroid is pure and collapsible. We also generalize Zaslavsky's central decomposition theorem for hyperplane arrangements to affine oriented matroids.  相似文献   
138.
In this paper, we find some new explicit examples of Hamiltonian minimal Lagrangian submanifolds among the Lagrangian isometric immersions of a real space form in a complex space form.  相似文献   
139.
In this note, the authors resolve an evolutionary Wente's problem associated to heat equation, where the special integrability of det▽u for u ∈ H1(R2,R2) is used.  相似文献   
140.
We report X-ray absorption near edge structures (XANES) study of CeAl2 thin films of various thicknesses, 40-120 nm, at Al K- and Ce L3-edges. The threshold of the absorption features at the Al K-edge shifts to the higher photon energy side as film thickness decreases, implying a decreased in Al p-orbital charges. On the other hand, from Ce L3-edge spectra, we observed a decrease in the 5d4f occupancy as the surface-to-bulk ratio increases. The valence of Ce in these thin films, as revealed by the Ce L3-edge spectral results, is mainly trivalent. From a more detailed analysis we found a small amount of Ce4+ contribution, which increases with decreasing film thickness. Our results indicate that the surface-to-bulk ratio is the key factor which affects the electronic structure of CeAl2 thin films. The above observations also suggest that charge transfer from Al to Ce is associated with the decrease of the film thickness.  相似文献   
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