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51.
一种新型可调谐锁模光纤激光器   总被引:2,自引:1,他引:1  
利用法布里-珀罗腔的激光二极管作为调制器件,实现环形腔光纤激光器的主动锁模。并利用法布里-珀罗腔的激光二极管的多纵模特性,把激光二极管当作一梳状滤波器,通过偏振控制器来调整入射到激光二极管内光的偏振态,同时均衡腔内增益,得到波长大范围可调谐的锁模激光,其脉冲宽度约为48ps,脉冲重复速率2GHz。  相似文献   
52.
A new method, based on zero point of longitudinal electric field, was used to determine the spatial resolution of external electro-optic (EO) probing equipment. Considering the diffraction of Gauss beam, the result of external EO probing was simulated which was in accordance with the experiment. A spatial resolution <1 μm was demonstrated initially in our equipment using 650 nm laser diode as probe beam and semi-insulating GaP as probe tip.  相似文献   
53.
苏良碧  杨卫桥  董永军  徐军  周国清 《物理学报》2004,53(11):3956-3960
应用TGT法生长了直径为75mm的U:CaF2晶体,宏观上透明完整.应用公式K0=Cs/Cl计算了U在CaF2晶体中的分凝系数等于0.53.应用溶质分布一般公式Cs=K0C0(1-g)K0-1,计算U的浓度分布与测量值,数值符合说明晶体生长过程接近平衡状态.分析不同条件下生长的U: CaF2晶体的晶胞参数和吸收光谱,结果表明生长气氛决定U的价态及电荷补偿机理:无PbF2存在的条件下,U为+4价,晶体呈绿色;PbF2的加入起到氟化去氧作用,U倾向于以离子半径最接近于Ca2+的U3+存在,晶体呈红色.从晶体生长开始到结束的部位,U3+:CaF2晶体吸收光谱的峰位不变,峰强呈现与U浓度相同的增加趋势.U3+:CaF2晶体外层厚约5mm处呈黄色,含有U3+和U2+的混合价态离子,其原理是石墨坩埚的还原作用通过单质铅,使部分的U3+进一步还原成了U2+. 关键词: 铀 氟化钙晶体 分凝系数 晶胞参数  相似文献   
54.
A (w,r) cover‐free family is a family of subsets of a finite set such that no intersection of w members of the family is covered by a union of r others. A (w,r) superimposed code is the incidence matrix of such a family. Such a family also arises in cryptography as the concept of key distribution pattern. In the present paper, we give some new results on superimposed codes. First we construct superimposed codes from super‐simple designs which give us results better than superimposed codes constructed by other known methods. Next we prove the uniqueness of the (1,2) superimposed code of size 9 × 12, the (2,2) superimposed code of size 14 × 8, and the (2,3) superimposed code of size 30 × 10. Finally, we improve numerical values of upper bounds for the asymptotic rate of some (w,r) superimposed codes. © 2004 Wiley Periodicals, Inc.  相似文献   
55.
Suppose μ is a Radon measure on ℝ d , which may be non doubling. The only condition assumed on μ is a growth condition, namely, there is a constant C0>0 such that for all x∈supp(μ) and r>0, μ(B(x, r))⪯C0rn, where 0<n⪯d. We prove T1 theorem for non doubling measures with weak kernel conditions. Our approach yields new results for kernels satisfying weakened regularity conditions, while recovering previously known Tolsa’s results. We also prove T1 theorem for Besov spaces on nonhomogeneous spaces with weak kernel conditions given in [7].  相似文献   
56.
We present an interpolating, univariate subdivision scheme which preserves the discrete curvature and tangent direction at each step of subdivision. Since the polygon have a geometric information of some original (in some sense) curve as a discrete curvature, we can expect that the limit curve has the same curvature at each vertex as the control polygon. We estimate the curvature bound of odd vertices and give an error estimate for restoring a curve from sampled vertices on curves.  相似文献   
57.
在本文中,给定一组有序空间数据点列及每个数据点的切矢向量,利用加权二次有理Bézier曲线对数据点作插值曲线,使该曲线具有C1连续性,并且权因子只是对相应顶点曲线附近产生影响,同调整两个相邻的权因子可以调整这两个相邻顶点之间的曲线和它的控制多边形.  相似文献   
58.
59.
Neodymium doped bismuth layer structure ferroelectrics (BLSFs) ceramics CaBi4−xNdxTi4O15 (x=0, 0.25, 0.50, 0.75) were prepared by solid-state reaction method. X-ray diffraction pattern showed that single phase was formed when x=0-0.75. The refined lattice parameters showed that a (b) axes decrease at x=0.25 and increase with more Nd3+ dopant. The effects of Nd3+ doping on the dielectric and ferroelectric properties of CaBi4Ti4O15 ceramics are studied. Nd3+ dopant decreased the Curie temperature linearly, and the dielectric loss, tan δ, as well. The remnant polarization of Nd3+ doped CaBi4Ti4O15 ceramics was increased by 80% at x=0.25, while more Nd3+ dopant decreased the remnant polarization. CaBi3.75Nd0.25Ti4O15 ceramics had the largest piezoelectric constant d33. The structure and properties of CaBi4−xNdxTi4O15 ceramics showed that Nd3+ may occupy different crystal locations when Nd3+ content x is less than 0.25 and more than 0.50.  相似文献   
60.
Hydrogen-free silicon nitride (SiNx) films were deposited at room temperature by microwave electron cyclotron resonance (MW-ECR) plasma enhanced unbalance magnetron sputtering system. Both Fourier-transform infrared spectroscopy and x-ray photoelectron spectroscopy are used to study the bonding type and the change of bonding structures of the silicon nitride films. The results indicate that the chemical structure and composition of SiNx films deposited by this technique depend strongly on the N2 flow rates, the stoichiometric SiNx film, which has the highest hardness of 22.9 GPa, could be obtained at lower N2 flow rate of 4 sccm.  相似文献   
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