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61.
We experimentally demonstrate amplitude squeezed soliton utilizing intensity-dependent self-phase modulation in an asymmetric Sagnac interferometer.The system.whose components are connected via ferrule connector/physical connection(FC/PC)fiber connectors,constitutes all-fiber configuration to generate squeezed soliton.Soliton amplitude reduction measured by homodyne detection is near 4.0 dB below the shot-noise level.Optimal squeezing fields in both simple and compact all-fiber configuration are obtained. 相似文献
62.
Scanning moiré is generated by undersampling of a phase-modulated grating pattern. In projection profilometry the scanning moiré pattern represents equal height and depth contours on a test object. By use of time delay and integration (TDI) imaging, it is possible to generate an on-line scanning moiré pattern from the complete periphery of a rotating cylindrical object. For automated phase and profile unwrapping from scanning moiré fringes, phase-shifting interferometry techniques are most desirable. However, lack of spatial information in the undersampled scanning moiré fringes introduces serious errors in phase unwrapping. We report a method that uses oversupply of data to balance the effect of undersampling. This oversupply is achieved with a TDI feature that permits programmable image magnification in the scanning direction. 相似文献
63.
64.
设计并镀制了193nm Al2O3/MgF2反射膜,对它们在空气中分别进行了250-400℃的高温退火,测量了样品的透射率光谱曲线和绝对反射率光谱曲线.发现样品在高反射区的总的光学损耗随退火温度的升高而下降,而后趋于饱和.采用总积分散射的方法对样品在不同退火温度下的散射损耗进行了分析,发现随着退火温度的升高散射损耗有所增加.因此,总的光学损耗的下降是由于吸收损耗而不是散射损耗起主导作用.对Al2O3材料的单层膜进行了同等条件的退火处理,由它们光学性能的变化推导出它们的折射率和消光系数的变化,从而解释了相应的多层膜光学性能变化的原因.反射膜的反射率在优化联系、镀膜工艺与退火工艺的基础上达98%以上. 相似文献
65.
通过赝势平面波方法系统地研究了3d过渡金属元素在B2-NiAl中的占位以及对键合性质的影响.通过形成能得出Sc,Ti,V 和Zn元素优先取代NiAl中的Al位,而Cr,Mn,Fe,Co和Cu优先取代Ni位.通过分析晶格常数变化量、电荷聚居数、交叠聚居数以及价电荷密度分布, 讨论了晶格畸变和键合性质的变化.结果表明: 取代Al的Sc,Ti,V和Zn元素掺杂使NiAl中晶格发生畸变,这对NiAl键合性质的变化起着重要作用,这些掺杂元素与第一近邻Ni原子产生强烈的排斥作用,形成反键,同时它们之间发生较大的电荷转
关键词:
NiAl金属间化合物
3d过渡金属
第一性原理
键合性质 相似文献
66.
Influence of reaction gas flows on the properties of SiGe:H thin film prepared by plasma assisted
reactive thermal chemical vapour deposition 总被引:1,自引:0,他引:1 下载免费PDF全文
A new preparing technology, very high frequency plasma assisted reactive thermal chemical vapour deposition (VHFPA-RTCVD), is introduced to prepare SiGe:H thin films on substrate kept at a lower temperature. In the previous work, reactive thermal chemical vapour deposition (I~TCVD) technology was successfully used to prepare SiGe:H thin films, but the temperature of the substrate needed to exceed 400℃. In this work, very high frequency plasma method is used to assist RTCVD technology in reducing the temperature of substrate by largely enhancing the temperature of reacting gases on the surface of the substrate. The growth rate, structural properties, surface morphology, photo- conductivity and dark-conductivity of SiGe:H thin films prepared by this new technology are investigated for films with different germanium concentrations, and the experimental results are discussed. 相似文献
67.
68.
Han Huiyun Li Xingliang Han Mengmeng Liu Jingmin Yan Dan Yang Zhenjun Shang Ce Feng Yali Zhang Shumin 《Optical Review》2018,25(2):237-243
Optical Review - We have numerically investigated the required minimum cavity dispersion (RMCD) for obtaining stable pulses in net normal dispersion, graphene mode-locked, Yb-doped fiber lasers... 相似文献
69.
Changfeng FangBin Cui Yuqing XuGuomin Ji Desheng Liu Shijie Xie 《Physics letters. A》2011,375(41):3618-3623
We report first-principles calculations of the current-voltage characteristic and the conductance of carbon-based molecular wires with different length capped with sulfur ends between two metallic electrodes made of different metals. The optimized molecular structure of carbon chain in the junction is presented on the structure of polyyne. The conductance of the polyyne wires shows oscillatory behavior depending on the number of carbon atoms (triple bonds). Current rectification is found and rectification direction presents inversion with the odd and even number of carbon atoms. 相似文献
70.
In this paper, we show that the leakage current properties of BiFeO3 (BFO) thin films have been greatly improved by Zr-doping. In contrast, the magnetic properties of Zr-doped BFO films are affected as a weak ferromagnetism. Beyond the double-exchange interactions arising from the creation of Fe2+, we propose another simple model considering the replacement of the magnetically active Fe3+, time to time, by a non-active Zr4+, which is expected to induce a local ferromagnetic coupling rather than an antiferromagnetic one. 相似文献