高功率激光装置光传输管道污染规律及对光学表面损伤性能的影响

研究高功率激光装置光传输管道内部洁净度变化规律,分析其对内部重要光学元件光学性能的影响规律,提出污染控制措施。对光传输管道内部的气溶胶进行采样,并利用空气品质分析仪及扫描电镜对其进行分析,得到光传输管道内部洁净度变化规律和污染源;采用内部放置透射膜元件的方法,研究洁净度等级水平对透射膜的微观结构和透射率的影响,并利用1-on-1的测试方式进行透射膜元件的损伤阈值测试。研究结果表明：光传输管道内部的洁净度在激光辐照后迅速上升至万级水平,透射膜元件在此环境下其透过率严重下降,下降幅度为2.5%,且表面微观形貌发生变化。光学透射薄膜表面损伤阈值随表面污染水平呈现线性下降规律,最大下降幅度约为10%。污染监测和成分分析结果表明管道内部灰尘及杂散光或者鬼光束辐照金属产生的等离子体是管道内污染的主要源头,在此基础上提出了正压密封保持的技术手段确保内部光学表面洁净度水平,延长使用寿命。     

The Antibacterial Activity Mode of Action of Plantaricin YKX against Staphylococcus aureus

We aimed to evaluate the inhibitory effect and mechanism of plantaricin YKX on S. aureus. The mode of action of plantaricin YKX against the cells of S. aureus indicated that plantaricin YKX was able to cause the leakage of cellular content and damage the structure of the cell membranes. Additionally, plantaricin YKX was also able to inhibit the formation of S. aureus biofilms. As the concentration of plantaricin YKX reached 3/4 MIC, the percentage of biofilm formation inhibition was over 50%. Fluorescent dye labeling combined with fluorescence microscopy confirmed the results. Finally, the effect of plantaricin YKX on the AI-2/LuxS QS system was investigated. Molecular docking predicted that the binding energy of AI-2 and plantaricin YKX was −4.7 kcal/mol and the binding energy of bacteriocin and luxS protein was −183.701 kcal/mol. The expression of the luxS gene increased significantly after being cocultured with plantaricin YKX, suggesting that plantaricin YKX can affect the QS system of S. aureus.     

锂二次电池中的原位聚合电解质

聚合物电解质主要分为凝胶聚合物电解质和固态聚合物电解质两种类型,均能够提升锂二次电池的性能.其中,凝胶聚合物电解质是利用增塑剂实现聚合物基质的凝胶化,将有机液态电解液固定在三维网络结构中,因此同时具备液态的离子扩散速率和固态材料的机械性能;而固态聚合物电解质是一种完全没有液态电解质的体系,利用聚合物基体的极性实现锂盐的...     

Plastic strain and dislocation structure of the KDP group crystals

Plastic strain of the KDP, DKDP, RDP, ADP crystals has been studied by the methods of uniaxial compression, selective etching, and indentation. It has been found that at room temperature the crystals had little plasticity, while at high temperature their plasticity was large. Rows of dislocations and dislocation rosettes have been observed. Glide systems and activation parameters of the process of plastic glide have been determined.     

稀土钐离子可见荧光量子产率的精确测试与计算

采用积分球配以CCD光谱测试系统,在蓝色半导体发光二极管激发下,对Sm3 掺杂的低声子能量、高折射率铋碲酸盐玻璃的荧光光谱进行测试。实现了荧光发射特性绝对评价为目的的绝对光谱功率分布测定,为发光与激光材料荧光发射特性的精确测量与表征提供了一种准确方法。荧光测试系统由直径为25.4cm的积分球配以CCD探测器组成,通过标准卤素灯定标,辅助卤素灯校正积分球内环境变化,解析出样品的绝对光谱功率分布,并进一步计算出光量子数分布,求得荧光量子产率等荧光特征参量。测试与计算结果表明,对应可见区Sm3 四个特征发射峰,总荧光量子产率为7.55%。     

转移基板材质对Si衬底GaN基LED芯片性能的影响

在Si衬底上生长了GaN基LED外延材料,分别转移到新的硅基板和铜基板上,制备了垂直结构蓝光LED芯片。研究了这两种基板GaN基LED芯片的光电性能。在切割成单个芯片之前,对大量尺寸为(300μm×300μm)的这两种芯片分别通高达1 A的大电流在测试台上加速老化1 h。结果显示,铜基板Si衬底GaN基LED芯片有更大的饱和电流,光输出效率更高,工作电压随驱动电流的变化不大,光输出在老化过程中衰减更小。铜基板芯片比硅基板芯片可靠性更高,在大功率半导体照明器件中前景诱人。     

掺锗硅基高非线性光纤超连续光源研究

利用非线性偏振旋转锁模掺铒光纤激光器和1100m长的掺锗硅基高非线性光纤制作了超连续光源,获得了从1150～1750nm的超宽带输出光谱,其中1150～1350nm波段光谱起伏小于3dB,1600～1700nm波段平坦度优于1dB,并有很好的向长波延展空间。光谱展宽的机理为孤子分裂与受激拉曼散射,而四波混频使光谱进一步展宽。     

Coulomb forces impacts on nanomaterial transportation within porous tank with lid walls

Journal of Thermal Analysis and Calorimetry - Electrical sensor has been considered in the current attempt. Combination of buoyancy, electric and radiative forces has been included in the governing...     

Visual exploration of dependency graph in source code via embedding-based similarity

Journal of Visualization -  A large software system contains millions of lines of source code, and the development often involves many developers over a long period. How to understand and...     

Co−Co Dinuclear Active Sites Dispersed on Zirconium-doped Heterostructured Co9S8/Co3O4 for High-current-density and Durable Acidic Oxygen Evolution

Developing cost-effective and sustainable acidic water oxidation catalysts requires significant advances in material design and in-depth mechanism understanding for proton exchange membrane water electrolysis. Herein, we developed a single atom regulatory strategy to construct Co−Co dinuclear active sites (DASs) catalysts that atomically dispersed zirconium doped Co₉S₈/Co₃O₄ heterostructure. The X-ray absorption fine structure elucidated the incorporation of Zr greatly facilitated the generation of Co−Co DASs layer with stretching of cobalt oxygen bond and S−Co−O heterogeneous grain boundaries interfaces, engineering attractive activity of significantly reduced overpotential of 75 mV at 10 mA cm⁻², a breakthrough of 500 mA cm⁻² high current density, and water splitting stability of 500 hours in acid, making it one of the best-performing acid-stable OER non-noble metal materials. The optimized catalyst with interatomic Co−Co distance (ca. 2.80 Å) followed oxo-oxo coupling mechanism that involved obvious oxygen bridges on dinuclear Co sites (1,090 cm⁻¹), confirmed by in situ SR-FTIR, XAFS and theoretical simulations. Furthermore, a major breakthrough of 120,000 mA g⁻¹ high mass current density using the first reported noble metal-free cobalt anode catalyst of Co−Co DASs/ZCC in PEM-WE at 2.14 V was recorded.