Stability of polymer thin-film transistors based on poly(2-methoxy-5-(2′-ethyl-hexyloxy)-1,4-phenylene vinylene)

Polymer thin-film transistors (PTFTs) based on poly(2-methoxy-5-(2′-ethyl-hexyloxy)-1,4-phenylene vinylene) (MEH-PPV) semiconductor are fabricated by spin-coating process and characterized. In the experiments, solution preparation, deposition and device measurements are all performed in air for large-area applications. Hysteresis effect and gate-bias stress effect are observed for the devices at room temperature. The saturation current decreases and the threshold voltage shifts toward the negative direction upon gate-bias stress, but carrier mobility hardly changes. By using quasi-static C-V analysis for MOS capacitor structure, it can be deduced that the origin of threshold-voltage shift upon negative gate-bias stress is predominantly associated with hole trapping within the SiO₂ gate dielectric near the SiO₂/MEH-PPV interface due to hot-carrier emission.     

Using photoelectron emission microscopy with hard-X-rays

We present several successful test cases of using photoelectron emission microscopy (PEEM) for photon energy up to 25 keV. First, the full extended X-ray absorption fine structure analysis was implemented in areas as small as 100 μm² for transition-metal K edge absorption spectra and, therefore, demonstrated the feasibility of combining structural and chemical analysis with hard-X-ray absorption spectroscopy with high lateral resolution. We also show that PEEM can be used in a transmission (radiography) mode as an imaging detector for hard-X-ray. This approach again leads to the unprecedented 0.3 μm lateral resolution, particularly critical for the use of coherence-based phase contrast techniques in real time X-ray radiology.     

铁磁薄膜中圆偏振光感应的瞬态磁光Kerr峰的物理起源

使用飞秒时间分辨抽运-探测磁光Kerr光谱技术,实验研究了圆偏振光抽运面内磁化FePt和垂直磁化GdFeCo薄膜的磁化演化动力学,发现在时间延迟零点处均出现瞬态Kerr峰.分析了此Kerr峰的起源,指出此瞬态Kerr峰与铁磁性无关,可能起源于自由电子的顺磁磁化,而顺磁磁化的外磁场来自圆偏振抽运光的逆Faraday效应.基于顺磁磁化模型的计算结果支持此观点.基于此观点,逆Faraday效应感应的磁场脉冲宽度应该与激光脉冲宽度一致.     

Effects of SiNx on two-dimensional electron gas and current collapse of A1GaN/GaN high electron mobility transistors

SiNx is commonly used as a passivation material for AlGaN/GaN high electron mobility transistors (HEMTs). In this paper, the effects of SiN x passivation film on both two-dimensional electron gas characteristics and current collapse of AlGaN/GaN HEMTs are investigated. The SiNx films are deposited by high- and low-frequency plasma-enhanced chemical vapour deposition, and they display different strains on the AlGaN/GaN heterostructure, which can explain the experiment results.     

基于X射线衍射的GaN薄膜厚度的精确测量

结合Williamson-Hall plot方法和线型分析方法的优点,提出了一种有效分离有限晶粒尺寸和非均匀应力等X射线衍射展宽效应的方法,可以用于GaN外延层厚度等参数的快速精确测量.用该方法对一系列在蓝宝石衬底上生长的厚度在0.7—4.2μm的GaN外延膜进行了测量,并与椭圆偏振光谱法测量结果进行了比较,结果表明其差别<4%,反应了这种方法的准确性. 关键词： GaN薄膜 厚度测量 X射线衍射     

On the resolution of 5770-90 Å doublet in Hg-spectrum holographic reconstruction

An exact analysis is given to explain the experimental results of Su et al. The resolving power is shown to vary from extremely good to worse than that based on the Rayleigh criterion, depending upon the location of the illuminated area on the hologram during reconstruction.     

Effect of interface-roughness scattering on mobility degradation in SiGe p-MOSFETs with a high-k dielectric/SiO2 gate stack＊

A physical model for mobility degradation by interface-roughness scattering and Coulomb scattering is proposed for SiGe p-MOSFET with a high-k dielectric/SiO2 gate stack. Impacts of the two kinds of scatterings on mobility degradation are investigated. Effects of interlayer （SiO2） thickness and permittivities of the high-k dielectric and interlayer on carrier mobility are also discussed. It is shown that a smooth interface between high-k dielectric and interlayer, as well as moderate permittivities of high-k dielectrics, is highly desired to improve carriers mobility while keeping alow equivalent oxide thickness. Simulated results agree reasonably with experimental data.     

SBA-15负载Pd催化剂的制备及其在Heck反应中的应用研究

利用水热反应制备了表面离子液体功能化的SBA-15介孔材料,在丙酮溶液中与氯化钯反应,然后使用水合肼在乙醇中还原.测试了这种催化剂在Mizoroki-Heck反应中的催化活性.与直接负载在SBA-15上的钯催化剂相比,这种表面修饰的介孔SBA-15负载催化剂表现出更高的催化活性、可回收性和反应稳定性.氮气吸脱附实验和小角XRD衍射实验表明,在合成中,材料的介孔性能并没有被破坏.透视电镜也表征了该材料的表面形貌.最后,Mizoroki-Heck反应表明该催化剂具有很高的催化活性,且循环五次后,其催化活性降低并不明显.     

Polarogkaphy of uranyl-malate complexes at moderately low temperature

The polarographic behavior of uranyl ion at ther dropping mercury electrode was examined in malic acid solution at 15°. The limiting regions of complex formation, polymerization, and reversibility as functions of pH value and ligand concentration were studied. The dimerization of the complexes was demonstrated by the currentvoltage curves and conductometric measurements. Three kinds of complex species with metal-ligand ratio of 2:1, 2:2, and 2:3 were identified.     

强流二极管绝缘体滑闪监测及其影响

 以闪光二号加速器为研究平台, 建立了微分环阵列和Rogowski线圈同时监测二极管电流的方法,监测了二极管绝缘体表面的滑闪现象。根据电流探头测量结果的差异,分析了绝缘体滑闪对电子束流参数的影响。二极管绝缘体出现滑闪,位置附近的微分环波形严重畸变,其它位置的微分环和Rogowski线圈测量结果基本一致。采用距离滑闪位置较远的微分环结果处理二极管束流参数,相对于不出现滑闪时的结果,束流强度和总能量没有明显的变化。绝缘体滑闪沿面局部放电,能量损失较小,尚未对电子束流造成较大影响。