基于二维结构薄膜的偏振选择相位光栅的研究

利用二维结构薄膜构建了具有偏振选择特性的新型相位光栅,借助严格耦合波分析(RCWA)方法计算了光栅各级衍射强度随入射光波长及入射角的变化,发现在垂直入射情况下,波长600—640 nm范围内,相位光栅对横向电学(TE)模主要产生0级衍射,而对横向磁学(TM)模产生±1级衍射,在波长633nm处,0级衍射光的偏振消光比为109.8,±1级衍射光的偏振消光比为334.6.利用时域有限差分方法对这种相位光栅的偏振分束现象进行了模拟,偏振分离角在玻璃基板内可以达到10°左右,最后模拟了入射角为23°时光栅对不同偏     

微腔旋转对耦合腔光波导群速度的影响

本文利用多重散射方法和时域有限差分方法,理论研究了微腔旋转对二维正方晶格光子晶体耦合腔光波导群速度的影响.研究结果表明,通过旋转微腔可以造成传播模的模式分裂,从而实现群速度的降低.当微腔旋转角度为45°时,传播模的群速度最小,两个传播模的群速度分别达到了0.0016倍和0.0009倍于真空光速,与微腔未旋转时相比降低了一个数量级.上述两种传播模群速度的差别是由传播模的空间对称性决定的. 关键词： 二维光子晶体 耦合腔光波导 群速度     

Observation of electron weak localization and correlation effects in disordered graphene

We have studied the electron transport properties of a disordered graphene sample, where the disorder was intentionally strengthened by Ga⁺ ion irradiation. The magneto-conductance of the sample exhibits a typical two-dimensional electron weak localization behavior, with electron-electron interaction as the dominant dephasing mechanism. The absence of electron anti-weak localization in the sample implies strong intersublattice and/or intervalley scattering caused by the disorders. The temperature and bias-voltage dependencies of conductance clearly reveal the suppression of conductance at low energies, indicating opening of a Coulomb gap due to electron-electron interaction in the disordered graphene sample. Supported by the National Natural Science Foundation of China (Grant Nos. 10774172 and 10874220), and the National Basic Research Program of China from the MOST (Grant No. 2006CB921304)     

The First Results of Supersonic Molecular Beam Injection in the HL-2A Tokamak

HL-2A tokamak, the first tokamak with divertor in China, has been constructed and put into operation in 2002. The main parameters are R=1.65 m, a=0.4 m, BT=2.8 T, Ip = 0. 48 MA. The divertor of HL-2A is unique, because it is characterized with a large closed divertor chamber. The device has double divertor chamber, but now it is operating with lower single null configuration to study the physics of divertor for the next step design of a divertor. Supersonic molecular beam injection （SMBI） system with LN2 cooling trap was first installed and demonstrated on the HL-2A tokamak in 2004. The first results of SMBI into HL-2A plasma are to demonstrate the function of the HL-2A divertor and to observe the cold pulse propagation during multi-pulse SMBI on HL-2A Tokamak.     

Hα Emission Imaging during Supersonic Molecular Beam Injection by CCD Photograph

There are several fuelling methods for tokamak plasma： pellet injection （PI）, gas puffing （GP）, neutral beam injection （NBI） and supersonic molecular beam injection （SMBI） .SMBI has been created in the Southwestern Institute of Physics, China.     

强反射复杂表面随机缺陷检测照明系统分析

分析了采用CCD光电检测法对强反射复杂表面随机缺陷进行检测时的光学照明问题。给出了缺陷显现力的具体定义。对比了平行光和均匀散射光对消除强反射光的不同作用及对不同表面缺陷的显现力。分析了使用均匀散射光作为光源时，工件表面照度对成像质量的影响。给出了在上述条件下光照系统设计的基本原则。     

含有本征SiGe层的SiGe异质结双极晶体管集电结耗尽层宽度模型

本文分别建立了含有本征SiGe层的SiGe HBT(异质结双极晶体管)集电结耗尽层各区域的电势、电场分布模型,并在此基础上,建立了集电结耗尽层宽度和延迟时间模型,对该模型进行了模拟仿真,定量地分析了SiGe HBT物理、电学参数对集电结耗尽层宽度和延迟时间的影响,随着基区掺杂浓度和集电结反偏电压的提高,集电结耗尽层延迟时间也随之增大,而随着集电区掺杂浓度的提高和基区Ge组分增加,集电结耗尽层延迟时间随之减小. 关键词： SiGe HBT 集电结耗尽层 延迟时间     

漏致势垒降低效应对短沟道应变硅金属氧化物半导体场效应管阈值电压的影响

结合应变硅金属氧化物半导体场效应管(MOSFET)结构,通过求解二维泊松方程,得到了应变Si沟道的电势分布,并据此建立了短沟道应变硅NMOSFET的阈值电压模型.依据计算结果,详细分析了弛豫Si_1－βGe_β中锗组分β、沟道长度、漏电压、衬底掺杂浓度以及沟道掺杂浓度对阈值电压的影响,从而得到漏致势垒降低效应对小尺寸应变硅器件阈值电压的影响,对应变硅器件以及电路的设计具有重要的参考价值. 关键词： 应变硅金属氧化物半导体场效应管 漏致势垒降低 二维泊松方程 阈值电压模型     

A planar left-handed metamaterial based on electric resonators

A planar left-handed metamaterial(LHM) composed of electric resonator pairs is presented in this paper.Theoretical analysis,an equivalent circuit model and simulated results of a wedge sample show that this material exhibits a negative refraction pass-band around 9.6GHz under normal-incidence and is insensitive to a change in incidence angle.Furthermore,as the angle between the arm of the electric resonators and the strip connecting the arms increases,the frequency range of the pass-band shifts downwards.Consequently,this LHM guarantees a relatively stable torlerence of errors when it is practically fabricated.Moreover,it is a candidate for designing multi-band LHM through combining the resonator pairs with different angles.     

基于高介电常数基板和金属结构负折射材料的设计,仿真与验证

通过将单回路镜像对称开口金属环结构印制在高介电常数基板上,实现了一种金属含量比传统负折射材料更少,"双负"通带比全介质负折射材料更宽的负折射材料.分析了高介电常数基板产生负介电常数以及"双负"通带形成的机理,通过仿真实验分析了影响"双负"通带的因素.通过制作样品验证了这一机理实现"双负"的可行性,理论分析与实验结果都表明这种方法可实现较宽频段内的"双负"通带. 关键词： 负折射材料 负介电常数 负磁导率 介质谐振器原理