Adaptive regulation for deterministic systems

For the linear deterministic system with unknown orders and coefficients adaptive controls are given so that the closed-loop system is stabilized and the unknown parameters are consistently estimated. Moreover, if the parameter estimation is ignored, then the system input and output can be reduced to zero with an exponential rate.This project is supported by the National Natural Science Foundation of China.In Commemoration of the 15th Anniversary of the Acta Mathematicae Applicatae Sinica.     

Theoretical analysis of thermal effects in fiber laser from the moment when pump is turned on to steady-state

A theoretical analysis of the pump-induced temperature change and associated thermal phase shift occurring in a fiber laser is presented. The temperature rise and thermal phase shift from the moment when pump is turned on to steady-state in fiber lasers, such as Yb-doped fiber laser, are numerical calculated.With the same parameters, the numerical solution is in good agreement with the finite-element (ANSYS software) simulation.     

Fabrication of bamboo-shaped GaN nanorods

Bamboo-shaped GaN nanorods were formed through a simple sublimation method. They were characterized by means of X-ray powder diffraction (XRD), transmission electron microscopy (TEM), high-resolution transmission electron microscopy (HRTEM) and selected-area electron diffraction (SAED). The TEM image showed that the nanorods were bamboo-like. XRD, HRTEM and SAED patterns indicated that the nanorods were single-crystal wurtzite GaN. Received: 8 January 2001 / Accepted: 28 April 2001 / Published online: 20 December 2001     

A New Pathway to Synthesize Cyclomercurated Ferrocenylimines Containing Heterocyclic Ring

The cyclomercurated ferrocenylimines containing heterocyclic ring were prepared by the condensation of cyclomercuration of acylferrocene with the appropriate heterocyclic amine.This procedure provides an efficient method for the synthesis of cyclomerucurated ferrocenylimines containing heterocyclic ring which are difficultly synthesized by the conventional method.The reaction mechanism is proposed.     

Discovery of a new long-lived isomeric state in 125Ce

A new long-lived isomeric state in the near proton dripline nucleus ¹²⁵Ce has been identified with Schottky mass spectrometry at GSI. The excitation energy E ^* = 103(12)keV and the decay time of 193(1)s have been obtained from a single stored fully ionized ^125m Ce⁵⁸⁺ ion. The data implies an E3 transition and a 1/2⁺ assignment for the spin of the isomer.     

Optimizing the optical field distribution of solid immersion lens system by a continuous phase filter

In solid immersion lens (SIL) microscopy systems with high numerical aperture (NA), there always exists the aberration produced by Fresnel effects at the interface between SIL and the sample. This aberration may cause the degradation of the image of sample. We design a continuous phase filter and optimize the optical field distribution of SIL system. The numerical results show that when the continuous phase filter is used, the field distribution of SIL system can be optimized, and the focal depth and intensity of transmitted light can be increased. At the same time, the intensity of side-lobe and the resolution are kept almost unchanged.     

关于半线性热方程的死角性质

本文考虑下述问题：这里，．本文证明了在发生死角时只有有限个死角点．     

粒子分辨CCT方法中的δ电子效应

提出了切伦科夫相关时间测量(CCT)中初始粒子在辐射体里产生的δ电子的干扰问题,以及降低干扰的方法. 通过模拟计算给出了北京τ-C工厂探测器初步设计中CCT的π/K分辨本领.     

On the validity of the amphoteric-defect model in gallium arsenide and a criterion for Fermi-level pinning by defects

Using the theoretically calculated point-defect total-energy values of Baraff and Schlüter in GaAs, anamphoteric-defect model has been proposed by Walukiewicz to explain a large number of experimental results. The suggested amphoteric-defect system consists of two point-defect species capable of transforming into each other: the doubly negatively charged Ga vacancyV _Ga ^2– and the triply positively charged defect complex (AS_Ga+V _As)³⁺, with As_Ga being the antisite defect of an As atom occupying a Ga site andV _As being an As vacancy. When present in sufficiently high concentrations, the amphoteric defect systemV _Ga ^2– /(As_Ga+V _As)³⁺ is supposed to be able to pin the GaAs Fermi level at approximately theE _v +0.6 eV level position, which requires that the net free energy of theV _Ga/(As_Ga+V _As) defect system to be minimum at the same Fermi-level position. We have carried out a quantitative study of the net energy of this defect system in accordance with the individual point-defect total-energy results of Baraff and Schlüter, and found that the minimum net defect-system-energy position is located at about theE _v +1.2 eV level position instead of the neededE _v +0.6 eV position. Therefore, the validity of the amphoteric-defect model is in doubt. We have proposed a simple criterion for determining the Fermi-level pinning position in the deeper part of the GaAs band gap due to two oppositely charged point-defect species, which should be useful in the future.     

KrF准分子激光激发掺锗光纤折射率扰动的非线性过程

本文采用了一种简单的功率监测法,观察了KrF准分子激光对掺锗光纤折射率影响的非线性过程。观察到子纤芯折射率扰动过程中非稳定现象、饱和现象和折射率扰动的非线性。