矩形管内临界爆轰动力学数值分析

 对矩形管内临界爆轰动力学特征进行了数值分析。采用基元反应描述爆轰化学反应过程,采用二阶附加半隐的龙格-库塔法和5阶WENO格式求解二维反应欧拉方程。对于25%氩稀释化学计量比的氢氧预混气体,当管道宽度为30 mm、初温为300 K时,产生临界爆轰的预混气体初压为3.5 kPa。在此临界条件下,获得了临界爆轰胞格结构、沿壁面的速度和峰值压力曲线及流场波系演变特征。着重对比分析了矩形管内临界爆轰与普通爆轰在爆轰波速度、平均速度、胞格宽长比、横波结构、未反应气囊及旋涡结构之间的差异,深入认识了临界爆轰的不稳定性和化学反应动力学特征。     

钛基TiO2纳米管阵列电极的光电催化性能

应用电化学阳极氧化法在纯Ti基底上制备高度有序的TiO2纳米管阵列,考察了Ti/TiO2光阳极的光电化学响应.以苯酚溶液为目标污染物,研究Ti/TiO2电极的光电催化性能,并与光催化性能进行比较.结果表明,该电极光电催化性能优于光催化性能.施加0.6 V电压时,光电催化性能最好.电化学阻抗谱分析显示,光电催化和光催化降解过程的速控步骤均为表面反应步骤,外加偏压减小了界面电荷转移阻抗,提高了光生载流子的分离效率.     

3-氨基-1,2,4-三氮唑对铜的缓蚀性能和吸附行为

采用电化学和表面增强拉曼光谱(SERS)方法研究了新型环境友好型金属水处理剂3-氨基-1,2,4-三氮唑(ATA)对铜在3% NaCl溶液中的缓蚀性能和吸附行为. 结果表明, ATA对铜有较好的缓蚀作用, 其中ATA浓度为0.24 mmol·L-1时对铜的缓蚀效率最高, 为97.65%, 其吸附行为符合Langmuir吸附等温式, 吸附机理是典型的化学吸附援SERS表明, ATA分子通过很强的吸附于铜表面达到抑制其腐蚀的作用, 是ATA-与Cu+形成配合物来阻止氯离子化合物(CuCl-2)的生成.     

锌铋合金电极在溶胶电解液中的电化学行为

锌电极的自腐蚀速率, 持续放电下的阳极溶解速率和电极钝化的难易程度是碱性电池性能的重要电化学参数. 本文应用线性极化、恒流放电等电化学实验方法研究了电解液中添加Carbopol树脂以及电极中添加Bi对锌电极电化学行为的影响. 并应用金相显微镜和环境扫描电子显微镜(ESEM)对锌电极和锌铋合金电极浸蚀及放电后的形貌进行了表征. 结果表明: 电解液中添加适量的Carbopol树脂可明显提高电极的极化电阻, 显著降低电极的自腐蚀速率; 阳极的溶解电位出现不同程度的正移, 阳极过电位显著增大且大电流密度放电时较明显促进电极钝化. 锌电极中添加一定量的Bi对改善电极表面氧化物膜的沉积形貌和电极表面固液界面的传质条件, 减小电极的自腐蚀速率, 抑制电极自腐蚀等方面具有显著作用.     

绿色缓蚀剂聚天冬氨酸对铜的缓蚀性能与吸附行为

采用电化学阻抗和极化曲线法研究了绿色缓蚀剂聚天冬氨酸(PASP)对铜在200 mg·L-1的NaCl溶液中的缓蚀性能和吸附行为. 结果表明, 在20 ℃时, PASP使用的最佳浓度为15 mg·L-1, 缓蚀率可达到78.3%, PASP的吸附明显降低了Cl-的侵蚀, 属于阳极型缓蚀剂. 随着温度的升高, PASP的缓蚀性能下降. 在50 ℃时, PASP的缓蚀率下降至40.4%. PASP的吸附行为服从Langmuir吸附等温式,是自发的、放热的过程, 属于化学吸附.     

可溶液加工的D-A-D型有机小分子的烷基链效应及光电性能

设计合成了3种可溶液加工的基于噻吩给体和2-吡喃-4-亚基丙二氰(PM)受体的新型Donor-Acceptor-Donor(D-A-D)型有机小分子TPT-N, TPT-S和TPT-D. 研究了噻吩给体单元上烷基链的数目对分子的溶解性、 光物理(吸收特性)、 热稳定和光电性能的影响. 结果表明, 随着烷基链的增加, 分子的溶解性增加, 成膜性能提高; 分子在溶液中的吸收光谱发生红移, 薄膜的吸收谱带变窄, 分子的最高占有分子轨道(HOMO)能级提高. 以D-A-D型有机小分子为给体, 富勒烯C₆₀衍生物-苯基-C₆₁-丁酸甲酯(PCBM)为受体制备了结构为ITO/PEDOT∶PSS/D-A-D∶PCBM/LiF/Al的体异质结太阳能电池. 研究结果表明, 基于单烷基链的TPT-S的太阳能电池具有相对较高的能量转换效率. 说明在D-A-D型有机小分子太阳能电池材料中, 烷基链的数目是决定材料性能及器件性能的重要因素之一.     

Theoretical Analysis of Current Crowding Effect in Metal/AIGaN/GaN Schottky Diodes and Its Reduction by Using Polysilicon in Anode

There exists a current crowding effect in the anode of AIGaN/GaN heterojunction Schottky diodes, causing local overheating when working at high power density, and undermining their performance. The seriousness of this effect is illustrated by theoretical analysis. A method of reducing this effect is proposed by depositing a polysilicon layer on the Schottky barrier metal. The effectiveness of this method is provided through computer simulation. Power consumption of the polysilicon layer is also calculated and compared to that of the Schottky junction to ensure the applicability of this method.     

Effect of Ⅲ/Ⅴ Ratio of HT-AIN Buffer Layer on Polarity Selection and Electrical Quality of GaN Films Grown by Radio Frequency Molecular Beam Epitaxy

We investigate the effect of A/N ratio of the high temperature （HT） AIN buffer layer on polarity selection and electrical quality of GaN films grown by radio frequency molecular beam epitaxy. The results show that low Al/N ratio results in N-polarity GaN films and intermediate Al/N ratio leads to mixed-polarity GaN films with poor electrical quality. GaN films tend to grow with Ga polarity on Al-rich AIN buffer layers. GaN films with different polarities are confirmed by in-situ reflection high-energy electron diffraction during the growth process. Wet chemical etching, together with atomic force microscopy, also proves the polarity assignments. The optimum value for room-temperature Hall mobility of the Ga-polarity GaN film is 703cm^2/V.s, which is superior to the N-polarity and mixed-polarity GaN films.     

The effect of composition on structural and electronic properties in polycrystalline CuGaSe2 thin film

Polycrystalline CuGaSe2 thin films on Mo-coated soda-lime glass substrates have been synthesized by coevaporation process from Cu, Ga and Se sources. Structural and electrical properties of the as-grown CuGaSe2 films strongly depend on the film composition. Stoichiometric CuGaSe2 is fabricated, as indicated by x-ray diffraction spectroscope （XRD） and x-ray fluorescence （XRF）. A two-phase region is composed of CuGaSe2 and Cu2-xSe phases for Cu-rich films, and CuGaSe2 and CuGa3Se5 phases for Ga-rich films, respectively. Morphological properties are detected by scanning electron microscope （SEM） for various compositional films, the grain sizes of the CuGaSe2films decrease with the extent of deviation from stoichiometric composition. Raman spectroscopy of Cu-rich samples shows that there exist large Cu-Se particles on the film surface. The results from Hall effect measurements for typical samples indicate that CuGaSe2 films are always of p-type semiconductor from Cu-rich to Ga-rich. Stoichiometric CuGaSe2 films exhibit relatively large mobility than any other compositional films. Finally, polycrystalline CuGaSe2 thin film solar cell with a best conversion efficiency of 6.02% has been achieved under the standard air mass （AM）1.5 spectrum for 100mW/cm^2 at room temperature （aperture area, 0.24cm^2）. The open circuit voltage of the CuGaSe2 solar cells is close to770 mV.     

Fabrication of IrO2 H+ Sensor and Its Application in the Measurement of pH at Steel/Concrete Interface

Corrosion of steel reinforcement is the most serious threat to the service life of modem reinforced concrete structure and the corrosion behavior of the steel reinforcement has a close dependence on the chemical environment at the steel/concrete interface. Among all the species which can affect the corrosion rate, H⁺ is of the greatest influence on the stability of the steel bars. However, the in-situ measurement of pH value at steel/concrete interface is still underway. In this paper fabrication of Ir oxide electrode which serves as the pH probe working at the steel/concrete interface was explored.