磷酰化氨基酸自聚成肽的FTIR研究

本文通过对傅里叶变换红外光谱（ＦＴＩＲ）技术研究证明了磷酰化氨基酸可以知聚成肽，并由此说明了在仿生化成肽反应过程中，磷（酰化）起着十分重要的作用，同时了说明了ＦＴＩＲ技术为仿生化的过程研究提供了新的研究方法。     

m=±1 and m=±2 mode helicon wave excitation

The characteristics of plasma produced by plane polarized m=±1 and m=±2 mode helicon waves were investigated for the first time. Plane polarized m=±1 and m=±2 mode helicon waves were mainly excited using a Nagoya type III antenna and a quadrupole antenna, respectively. Two-dimensional cross-field measurements of ArII optical emission induced by hot electrons were made to investigate the RF power deposition. The components of the wave magnetic field measured with a magnetic probe were compared with the field profiles computed for the m=±1 and m=±2 modes. Two and four high intensity plasma columns were observed for the m=±1 and m=±2modes, respectively. These columns were located at the regions between the antenna legs. The radial profiles of the wave magnetic field were in good agreement with computations     

Localized modes in open one-dimensional dissipative random systems

We consider, both theoretically and experimentally, the excitation and detection of the localized quasimodes (resonances) in an open dissipative 1D random system. We show that, even though the amplitude of transmission drops dramatically so that it cannot be observed in the presence of small losses, resonances are still clearly exhibited in reflection. Surprisingly, small losses essentially improve conditions for the detection of resonances in reflection as compared with the lossless case. An algorithm is proposed and tested to retrieve sample parameters and resonance characteristics inside the random system exclusively from reflection measurements.     

Current and strain-induced spin polarization in InGaN/GaN superlattices

The lateral current-induced spin polarization in InGaN/GaN superlattices (SLs) without an applied magnetic field is reported. The fact that the sign of the nonequilibrium spin changes as the current reverses and is opposite for the two edges provides a clear signature for the spin Hall effect. In addition, it is discovered that the spin Hall effect can be strongly manipulated by the internal strains. A theoretical work has also been developed to understand the observed strain-induced spin polarization. Our result paves an alternative way for the generation of spin polarized current.     

Trojan Horse Attack Free Fault-Tolerant Quantum Key Distribution Protocols Using GHZ States

Recently, Yang and Hwang (Quantum Inf. Process. 13(3): 781–794, 19) proposed two fault-tolerant QKD protocols based on their proposed coding functions for resisting the collective noise, and their QKD protocols are free from Trojan horse attack without employing any specific detecting devices (e.g., photon number splitter (PNS) and wavelength filter). By using four-particle Greenberger-Horne-Zeilinger (GHZ) state and four-particle GHZ-like state in their proposed coding functions, Yang and Hwang’s QKD protocols can resist each kind of the collective noise–collective-dephasing noise, collective-rotation noise. However, their proposed coding function can be improved by the utilization of three-particle GHZ state (three-particle GHZ-like state) instead of four-particle GHZ state (four-particle GHZ-like state) that will eventually reduce the consumption of the qubits. As a result, this study proposed the improved version of Yang and Hwang’s coding functions to enhance the qubit efficiency of their schemes from 20 % to 22 %.     

Compressive stress in polycrystalline volmer-weber films

The Volmer-Weber mode for growing polycrystalline films, which comprises island, network, and channel stages before the films become continuous, is well known for its complex stress behavior with compressive and tensile stress alternating in the initial three growth stages. Recently, two new mechanisms for the compressive stress have been proposed [Phys. Rev. Lett. 88, 156103 (2002); 89, 126103 (2002)], which account for the reversibility of stress generation and relaxation. We show that the two mechanisms play only minor roles for the development of compressive stress, which is confirmed to be due to capillarity effects in the precoalescence stage.     

Visible photoluminescence of nanometer-sized SiGe/Si heterostructure fabricated by ion implantation

An innovative fabrication technique for the nanometer-sized SiGe/Si heterostructure was developed in this study. Ge was induced in Si substrate by two-step ion implantation. The spherical SiGe nanoclusters are self-assembled in the Si substrate by subsequent rapid thermal annealing at 1,100 °C. The diameter of the spherical SiGe nanoclusters is 5–7 nm. Visible photoluminescence from this nanometer-sized SiGe/Si heterostructure at room temperature was investigated. We found three peak energies of visible luminescence spectra at 1.97, 2.13, and 2.16 eV, respectively. The luminescence intensity depends on the number of the nanoclusters and will be decreased because of the micro-defects around the heterostructure, which is discussed in detail.     

Effect of the laser fluence on the surface characterization of β-FeSi2 films prepared by pulsed laser deposition

Single-phase β-FeSi₂ films on silicon (1 0 0) were fabricated by pulse laser deposition. The structure and crystal quality of the samples were characterized by X-ray diffraction and Fourier transform infrared spectroscopy. The field scanning electron microscopy showed that the film thickness increases with the increasing of the laser fluence. Moreover, atomic force microscopy observations revealed the changes of surface properties with different laser fluence. Based upon all experimental results, it is found that 7 J/cm² is the most favorable for the formation of β-FeSi₂ thin films.     

Effects of hydrogen flux on the properties of Al-doped ZnO films sputtered in Ar + H2 ambient at low temperature

Al-doped ZnO (AZO) transparent conductive thin films were grown by magnetron sputtering with AZO (98 wt.% ZnO, 2 wt.% Al₂O₃) ceramic target in Ar + H₂ ambient at a relatively low temperature of 100 °C. To investigate the dependence of crystalline and properties of as-grown AZO films on the H₂-flux, X-ray diffraction (XRD), X-ray photoemission spectrometer (XPS), Hall and transmittance spectra measurements were employed to analyze the AZO samples deposited with different H₂-flux. The results indicate that H₂-flux has a considerable influence on the transparent conductive properties of AZO films. The resistivity of 4.15 × 10⁻⁴ Ω cm and the average transmittance of more than 94% in the visible range were obtained with the optimal H₂-flux of 1.0 sccm. Such a low temperature growing method present here may be especially useful for some low-melting point photoelectric devices and substrates.     

Entangled atomic state generation via adiabatic evolution of dark eigenstates in cavity QED

We propose a scheme for generating a two-atom entangled state and an N-atom W state using adiabatic evolution of dark eigenstates in cavity QED. The time required to complete the process does not need precise control. Since the cavity modes are never excited during the operations by engineering adiabatic evolution and controlling the atom–cavity couplings, the decoherence of the cavity decay can be suppressed.